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R. J. Markunas

Veröffentlichungen von R. J. Markunas zu Rudder, R. A.. ->
weitere Veröffentlichungen von R. J. Markunas:
Nonaqueous Titration of 2,4-Dinitrophenylhydrazones (1958)
Remote plasma-enhanced chemical-vapor deposition of epitaxial Ge films (1986)
Bonding of carbon to nickel surfaces: effects of subsurface Na, H and C (1994)
Effects of subsurface Na, H and C on the bonding of carbon to nickel surfaces (1993)
Cathodoluminescence from diamond films grown by plasma-enhanced chemical vapor deposition in dilute CO/H2, CF4/H2, and CH4/H2 mixtures (1991)
Direct deposition of polycrystalline diamond films on Si(100) without surface pretreatment (1991)
Gating of germanium surfaces using pseudomorphic silicon interlayers (1988)
On the feasibility of growing dilute CxSi1−x epitaxial alloys (1990)
The role of an ultrathin silicon interlayer at the SiO2-Ge interface (1992)
Activation energy and mechanism of CO desorption from (100) diamond surface (1993)
Low interface state density SiO2 deposited at 300 °C by remote plasma-enhanced chemical vapor deposition on reconstructed Si surfaces (1988)
Effect of rf power on remote-plasma deposited SiO2 films (1993)
Low-defect-density germanium on silicon obtained by a novel growth phenomenon (1992)
Low-temperature annealing of As-implanted Ge (1988)
Titrimetric analysis of 3:5-dinitrobenzoate derivatives (1960)
Veröffentlichungen zu Rudder, R. A..
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1
Rudder, R. A.., Fountain, G. G.., ... Remote plasma-enhanced chemical-vapor deposition of epitaxial Ge films
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 60, No. 10 (1986), p. 3519-3522
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1986
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2
Aspliden, C. I., Lynn, A., ... Diurnal and semi-diurnal low-level wind cycles over a tropical island
in: Boundary layer meteorology , ISSN 1573-1472, Vol. 12 (2. 1977), p. 187-199
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1977
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3
Graham, R. J.., Posthill, J. B.., ... Cathodoluminescence from diamond films grown by plasma-enhanced chemical vapor deposition in dilute CO/H2, CF4/H2, and CH4/H2 mixtures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 19 (1991), p. 2463-2465
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1991
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4
Rudder, R. A.., Hudson, G. C.., ... Direct deposition of polycrystalline diamond films on Si(100) without surface pretreatment
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 7 (1991), p. 791-793
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1991
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5
Frenklach, M.., Huang, D.., ... Activation energy and mechanism of CO desorption from (100) diamond surface
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 22 (1993), p. 3090-3092
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1993
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6
Fountain, G. G.., Rudder, R. A.., ... Low interface state density SiO2 deposited at 300 °C by remote plasma-enhanced chemical vapor deposition on reconstructed Si surfaces
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 63, No. 9 (1988), p. 4744-4746
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1988
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7
Vitkavage, D. J.., Fountain, G. G.., ... Gating of germanium surfaces using pseudomorphic silicon interlayers
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 53, No. 8 (1988), p. 692-694
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1988
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8
Posthill, J. B.., Rudder, R. A.., ... On the feasibility of growing dilute CxSi1−x epitaxial alloys
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 56, No. 8 (1990), p. 734-736
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1990
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9
Hattangady, S. V.., Mantini, M. J.., ... The role of an ultrathin silicon interlayer at the SiO2-Ge interface
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 71, No. 8 (1992), p. 3842-3852
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1992
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10
Whitten, J.L., Cremaschi, P., ... Effects of oxygen on surface reconstruction of carbon
in: Applied Surface Science, in: Applied Surface Science . - Amsterdam : Elsevier, ISSN 0169-4332, ZDB-ID 2002520-8 Vol. 75, No. 1-4 (1994), p. 45-50
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1994
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11
Yang, H., Whitten, J.L., ... Effects of subsurface Na, H and C on CH"3 adsorption on Ni(111)
in: Surface Science Letters, in: Surface Science Letters . - Amsterdam : Elsevier, ISSN 0167-2584, ZDB-ID 2229427-2 Vol. 277, No. 3 (1992), p. L95-L99
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1992
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12
Yang, H., Whitten, J.L., ... Effects of subsurface Na, H and C on CH"3 adsorption on Ni(111)
in: Surface Science, in: Surface Science . - Amsterdam : Elsevier, ISSN 0039-6028, ZDB-ID 1479030-0 Vol. 277, No. 3 (1992), p. L95-L99
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1992
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13
Hattangady, S. V.., Rudder, R. A.., ... In situ cleaning of GaAs surfaces using hydrogen dissociated with a remote noble-gas discharge
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 68, No. 3 (1990), p. 1233-1236
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1990
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14
Hattangady, S. V.., Fountain, G. G.., ... Interface engineering with pseudormorphic interlayers: Ge metal-insulator-semiconductor structures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 57, No. 6 (1990), p. 581-584
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1990
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15
Hattangady, S. V.., Posthill, J. B.., ... Epitaxial silicon deposition at 300 °C with remote plasma processing using SiH4/H2 mixtures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 3 (1991), p. 339-341
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1991
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16
Rudder, R. A.., Hudson, G. C.., ... Chemical vapor deposition of diamond films from water vapor rf-plasma discharges
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 60, No. 3 (1992), p. 329-331
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1992
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17
Humphreys, T. P.., Thomas, R. E.., ... The role of atomic hydrogen and its influence on the enhancement of secondary electron emission from C(001) surfaces
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 70, No. 10 (1997), p. 1257-1259
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1997
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18
Parikh, N. R.., Hunn, J. D.., ... Single-crystal diamond plate liftoff achieved by ion implantation and subsequent annealing
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 61, No. 26 (1992), p. 3124-3126
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1992
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19
Malta, D. P.., Posthill, J. B.., ... Secondary electron emission enhancement and defect contrast from diamond following exposure to atomic hydrogen
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 64, No. 15 (1994), p. 1929-1931
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1994
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20
Posthill, J. B.., Malta, D. P.., ... Method of fabricating a free-standing diamond single crystal using growth from the vapor phase
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 79, No. 5 (1996), p. 2722-2727
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1996