Anmelden/Registrieren
Erscheinungsjahr:
 
Zurück zur geteilten Ansicht
J. B. Posthill

Veröffentlichungen von J. B. Posthill zu Posthill, J. B.. ->
weitere Veröffentlichungen von J. B. Posthill:
Erratum: Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates [Appl. Phys. Lett. 54, 1687 (1989)] (1989)
Sample preparation technique for transmission electron microscopy of thin films on sapphire (1989)
Erratum: High-pressure vapor transport of ZnGeP2 [Appl. Phys. Lett. 56, 271 (1990)] (1990)
High-pressure vapor transport of ZnGeP2 (1990)
Organometallic vapor-phase-epitaxial growth and characterization of ZnGeAs2 on GaAs (1989)
Antiphase domain boundary formation in single-crystal chalcopyrite-structure ZnGeAs2 grown on GaAs (1989)
Bipolar transistor with ion implanted, rapid thermal annealed base and semi-insulating polycrystalline silicon emitter (1988)
Cathodoluminescence from diamond films grown by plasma-enhanced chemical vapor deposition in dilute CO/H2, CF4/H2, and CH4/H2 mixtures (1991)
Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy (1988)
On the feasibility of growing dilute CxSi1−x epitaxial alloys (1990)
Substrate effects on the epitaxial growth of ZnGeP2 thin films by open tube organometallic chemical vapor deposition (1991)
Direct deposition of polycrystalline diamond films on Si(100) without surface pretreatment (1991)
Low-defect-density germanium on silicon obtained by a novel growth phenomenon (1992)
Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers (1996)
Organometallic chemical vapor deposition and characterization of ZnGe"-"xSi"xP"2-Ge alloys on GaP substrates (1991)
Veröffentlichungen zu Posthill, J. B..
Zurück zur geteilten Ansicht
Verfasser Titel Jahr absteigend sortierenaufsteigend sortieren
zeige Details
1
Posthill, J. B. Erratum: Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates [Appl. Phys. Lett. 54, 1687 (1989)]
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 55, No. 4 (1989), p. 411-411
Zugang: zum Volltext
ähnliche Vorschläge
1989
zeige Details
2
Summerville, M. K.., Posthill, J. B.. Sample preparation technique for transmission electron microscopy of thin films on sapphire
in: Journal of Electron Microscopy Technique, in: Journal of Electron Microscopy Technique . - New York, NY : Wiley, ISSN 0741-0581 Vol. 12 (1. 1989), p. 56-57
Zugang: zum Volltext
ähnliche Vorschläge
1989
zeige Details
3
Xing, G. C.., Bachmann, K. J.., ... Erratum: High-pressure vapor transport of ZnGeP2 [Appl. Phys. Lett. 56, 271 (1990)]
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 56, No. 18 (1990), p. 1808-1808
Zugang: zum Volltext
ähnliche Vorschläge
1990
zeige Details
4
Xing, G. C.., Bachmann, K. J.., ... High-pressure vapor transport of ZnGeP2
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 56, No. 3 (1990), p. 271-273
Zugang: zum Volltext
ähnliche Vorschläge
1990
zeige Details
5
Solomon, G. S.., Timmons, M. L.., ... Organometallic vapor-phase-epitaxial growth and characterization of ZnGeAs2 on GaAs
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 65, No. 5 (1989), p. 1952-1956
Zugang: zum Volltext
ähnliche Vorschläge
1989
zeige Details
6
Solomon, G. S.., Posthill, J. B.., ... Antiphase domain boundary formation in single-crystal chalcopyrite-structure ZnGeAs2 grown on GaAs
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 55, No. 15 (1989), p. 1531-1533
Zugang: zum Volltext
ähnliche Vorschläge
1989
zeige Details
7
Ozguz, V. H.., Posthill, J. B.., ... Bipolar transistor with ion implanted, rapid thermal annealed base and semi-insulating polycrystalline silicon emitter
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 63, No. 8 (1988), p. 2831-2838
Zugang: zum Volltext
ähnliche Vorschläge
1988
zeige Details
8
Graham, R. J.., Posthill, J. B.., ... Cathodoluminescence from diamond films grown by plasma-enhanced chemical vapor deposition in dilute CO/H2, CF4/H2, and CH4/H2 mixtures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 19 (1991), p. 2463-2465
Zugang: zum Volltext
ähnliche Vorschläge
1991
zeige Details
9
Posthill, J. B.., Tarn, J. C. L.., ... Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 53, No. 13 (1988), p. 1207-1209
Zugang: zum Volltext
ähnliche Vorschläge
1988
zeige Details
10
Posthill, J. B.., Rudder, R. A.., ... On the feasibility of growing dilute CxSi1−x epitaxial alloys
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 56, No. 8 (1990), p. 734-736
Zugang: zum Volltext
ähnliche Vorschläge
1990
zeige Details
11
Xing, G. C.., Bachmann, K. J.., ... Substrate effects on the epitaxial growth of ZnGeP2 thin films by open tube organometallic chemical vapor deposition
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 69, No. 8 (1991), p. 4286-4291
Zugang: zum Volltext
ähnliche Vorschläge
1991
zeige Details
12
Rudder, R. A.., Hudson, G. C.., ... Direct deposition of polycrystalline diamond films on Si(100) without surface pretreatment
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 7 (1991), p. 791-793
Zugang: zum Volltext
ähnliche Vorschläge
1991
zeige Details
13
Malta, D. P.., Posthill, J. B.., ... Low-defect-density germanium on silicon obtained by a novel growth phenomenon
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 60, No. 7 (1992), p. 844-846
Zugang: zum Volltext
ähnliche Vorschläge
1992
zeige Details
14
Smith, David J.., Tsen, S.-C. Y.., ... Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 69, No. 14 (1996), p. 2086-2088
Zugang: zum Volltext
ähnliche Vorschläge
1996
zeige Details
15
Xing, G.C., Bachmann, K.J., ... Organometallic chemical vapor deposition and characterization of ZnGe"-"xSi"xP"2-Ge alloys on GaP substrates
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 113, No. 1-2 (1991), p. 113-119
Zugang: zum Volltext
ähnliche Vorschläge
1991
zeige Details
16
Lee, D. M.., Posthill, J. B.., ... Impurity gettering by misfit dislocations in Si (2% Ge) epitaxy: nickel
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 53, No. 5 (1988), p. 370-372
Zugang: zum Volltext
ähnliche Vorschläge
1988
zeige Details
17
George, T.., Foote, M. C.., ... Below band-gap laser ablation of diamond for transmission electron microscopy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 62, No. 22 (1993), p. 2880-2882
Zugang: zum Volltext
ähnliche Vorschläge
1993
zeige Details
18
Das, K.., Humphreys, T. P.., ... Molecular-beam epitaxial growth and microstructural characterization of GaAs on Si with a buried implanted oxide
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 64, No. 8 (1988), p. 3934-3937
Zugang: zum Volltext
ähnliche Vorschläge
1988
zeige Details
19
Hattangady, S. V.., Rudder, R. A.., ... In situ cleaning of GaAs surfaces using hydrogen dissociated with a remote noble-gas discharge
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 68, No. 3 (1990), p. 1233-1236
Zugang: zum Volltext
ähnliche Vorschläge
1990
zeige Details
20
Hattangady, S. V.., Posthill, J. B.., ... Epitaxial silicon deposition at 300 °C with remote plasma processing using SiH4/H2 mixtures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 3 (1991), p. 339-341
Zugang: zum Volltext
ähnliche Vorschläge
1991