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R. J. Markunas

Veröffentlichungen von R. J. Markunas zu Markunas, R. J.. ->
weitere Veröffentlichungen von R. J. Markunas:
Nonaqueous Titration of 2,4-Dinitrophenylhydrazones (1958)
Remote plasma-enhanced chemical-vapor deposition of epitaxial Ge films (1986)
Bonding of carbon to nickel surfaces: effects of subsurface Na, H and C (1994)
Effects of subsurface Na, H and C on the bonding of carbon to nickel surfaces (1993)
Cathodoluminescence from diamond films grown by plasma-enhanced chemical vapor deposition in dilute CO/H2, CF4/H2, and CH4/H2 mixtures (1991)
Direct deposition of polycrystalline diamond films on Si(100) without surface pretreatment (1991)
Gating of germanium surfaces using pseudomorphic silicon interlayers (1988)
On the feasibility of growing dilute CxSi1−x epitaxial alloys (1990)
The role of an ultrathin silicon interlayer at the SiO2-Ge interface (1992)
Activation energy and mechanism of CO desorption from (100) diamond surface (1993)
Low interface state density SiO2 deposited at 300 °C by remote plasma-enhanced chemical vapor deposition on reconstructed Si surfaces (1988)
Effect of rf power on remote-plasma deposited SiO2 films (1993)
Low-defect-density germanium on silicon obtained by a novel growth phenomenon (1992)
Low-temperature annealing of As-implanted Ge (1988)
Titrimetric analysis of 3:5-dinitrobenzoate derivatives (1960)
Veröffentlichungen zu Markunas, R. J..
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1
Sensabaugh, A. J.. Nonaqueous Titration of 2,4-Dinitrophenylhydrazones
In: Analytical chemistry. - Columbus, Ohio : American Chemical Society, ISSN 1520-6882, Vol. 30, No. 9 (1958), p. 1445-1447
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1958
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2
Rudder, R. A.., Fountain, G. G.., ... Remote plasma-enhanced chemical-vapor deposition of epitaxial Ge films
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 60, No. 10 (1986), p. 3519-3522
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1986
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3
Yang, H., Whitten, J.L., ... Bonding of carbon to nickel surfaces: effects of subsurface Na, H and C
in: Applied Surface Science, in: Applied Surface Science . - Amsterdam : Elsevier, ISSN 0169-4332, ZDB-ID 2002520-8 Vol. 75, No. 1-4 (1994), p. 12-20
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1994
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4
Yang, H., Whitten, J.L., ... Effects of subsurface Na, H and C on the bonding of carbon to nickel surfaces
in: Surface Science Letters, in: Surface Science Letters . - Amsterdam : Elsevier, ISSN 0167-2584, ZDB-ID 2229427-2 Vol. 294, No. 3 (1993), p. L945-L951
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1993
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5
Graham, R. J.., Posthill, J. B.., ... Cathodoluminescence from diamond films grown by plasma-enhanced chemical vapor deposition in dilute CO/H2, CF4/H2, and CH4/H2 mixtures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 19 (1991), p. 2463-2465
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1991
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6
Rudder, R. A.., Hudson, G. C.., ... Direct deposition of polycrystalline diamond films on Si(100) without surface pretreatment
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 7 (1991), p. 791-793
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1991
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7
Vitkavage, D. J.., Fountain, G. G.., ... Gating of germanium surfaces using pseudomorphic silicon interlayers
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 53, No. 8 (1988), p. 692-694
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1988
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8
Posthill, J. B.., Rudder, R. A.., ... On the feasibility of growing dilute CxSi1−x epitaxial alloys
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 56, No. 8 (1990), p. 734-736
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1990
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9
Hattangady, S. V.., Mantini, M. J.., ... The role of an ultrathin silicon interlayer at the SiO2-Ge interface
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 71, No. 8 (1992), p. 3842-3852
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1992
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10
Frenklach, M.., Huang, D.., ... Activation energy and mechanism of CO desorption from (100) diamond surface
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 22 (1993), p. 3090-3092
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1993
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11
Fountain, G. G.., Rudder, R. A.., ... Low interface state density SiO2 deposited at 300 °C by remote plasma-enhanced chemical vapor deposition on reconstructed Si surfaces
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 63, No. 9 (1988), p. 4744-4746
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1988
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12
Hattangady, S. V.., Alley, R. G.., ... Effect of rf power on remote-plasma deposited SiO2 films
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 73, No. 11 (1993), p. 7635-7642
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1993
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13
Malta, D. P.., Posthill, J. B.., ... Low-defect-density germanium on silicon obtained by a novel growth phenomenon
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 60, No. 7 (1992), p. 844-846
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1992
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14
Hattangady, S. V.., Fountain, G. G.., ... Low-temperature annealing of As-implanted Ge
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 63, No. 1 (1988), p. 68-74
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1988
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15
Robinson, W.T., Cundiff, R.H., ... Titrimetric analysis of 3:5-dinitrobenzoate derivatives
in: Talanta, in: Talanta . - Amsterdam : Elsevier, ISSN 0039-9140, ZDB-ID 1500969-5 Vol. 3, No. 4 (1960), p. 307-310
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1960
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16
Whitten, J.L., Cremaschi, P., ... Effects of oxygen on surface reconstruction of carbon
in: Applied Surface Science, in: Applied Surface Science . - Amsterdam : Elsevier, ISSN 0169-4332, ZDB-ID 2002520-8 Vol. 75, No. 1-4 (1994), p. 45-50
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1994
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17
Yang, H., Whitten, J.L., ... Effects of subsurface Na, H and C on CH"3 adsorption on Ni(111)
in: Surface Science Letters, in: Surface Science Letters . - Amsterdam : Elsevier, ISSN 0167-2584, ZDB-ID 2229427-2 Vol. 277, No. 3 (1992), p. L95-L99
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1992
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18
Yang, H., Whitten, J.L., ... Effects of subsurface Na, H and C on CH"3 adsorption on Ni(111)
in: Surface Science, in: Surface Science . - Amsterdam : Elsevier, ISSN 0039-6028, ZDB-ID 1479030-0 Vol. 277, No. 3 (1992), p. L95-L99
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1992
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19
Hattangady, S. V.., Rudder, R. A.., ... In situ cleaning of GaAs surfaces using hydrogen dissociated with a remote noble-gas discharge
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 68, No. 3 (1990), p. 1233-1236
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1990
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20
Hattangady, S. V.., Fountain, G. G.., ... Interface engineering with pseudormorphic interlayers: Ge metal-insulator-semiconductor structures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 57, No. 6 (1990), p. 581-584
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1990