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Si-Chen Lee

Veröffentlichungen von Si-Chen Lee zu Liu, Biing-Der. ->
weitere Veröffentlichungen von Si-Chen Lee:
Evidence for coupling of Si–Si lattice vibration and Si–D wagging vibration in deuterated amorphous silicon (1999)
Interfacial interaction between Al-1%Si and phosphorus-doped hydrogenated amorphous Si alloy at low temperature (1997)
Structural, optical, and electrical properties of hydrogenated amorphous silicon germanium alloys (1998)
Improved stability of deuterated amorphous silicon thin film transistors (1999)
Structural and electronic differences between deuterated and hydrogenated amorphous silicon (2000)
Mechanism for pillar-shaped surface morphology of polysilicon prepared by excimer laser annealing (2000)
Structural differences between deuterated and hydrogenated silicon nitride/oxynitride (2001)
Amorphous SiC/Si three-color detector (1988)
New model for the Staebler–Wronski effect in an amorphous silicon hydrogen alloy (1988)
Vertical monolithic integration of a GaAs/AlGaAs V-channeled substrate inner stripe laser diode and a heterojunction bipolar transistor (1990)
Monolithic integration of an AlGaAs/GaAs surface emitting laser diode and a photodetector (1991)
Emitter composition and geometry related surface recombination current of AlGaAs/GaAs heterojunction bipolar transistors (1992)
The structural and optical properties of a-SiNx:H prepared by plasma-enhanced chemical-vapor deposition (1992)
Transport mechanism of X band electrons in AlAs electrode through GaAs/AlAs/GaAs structure by varying GaAs well thickness (1993)
Observation of deep donor center related tunneling peak in the AlxGa1−xAs/AlAs/AlxGa1−xAs/AlAs/AlxGa1−xAs (0.40≤x≤0.50) resonant tunneling diodes (1993)
Veröffentlichungen zu Liu, Biing-Der.
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1
Liu, Biing-Der, Lee, Si-Chen, ... An InSb integrated photo-MOSFET fabricated by photo-enhanced chemical vapour deposition
in: Optical and quantum electronics , ISSN 1572-817X, Vol. 28 (10. 1996), p. 1277-1286
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1996
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2
Liu, Biing-Der., Lee, Si-Chen., ... InSb p-channel metal-oxide-semiconductor field-effect transistor prepared by photoenhanced chemical vapor deposition
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 26 (1993), p. 3622-3624
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1993
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3
Liu, Biing-Der., Shieh, Tung-Ho., ... Stress-induced outdiffusion of Be in p+ GaAs prepared by molecular-beam epitaxy
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 72, No. 7 (1992), p. 2767-2772
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1992