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Hao-Hsiung Lin

Veröffentlichungen von Hao-Hsiung Lin zu Lin, Hao-Hsiung. ->
weitere Veröffentlichungen von Hao-Hsiung Lin:
Current transport characteristics of P+/N AlxGa1−xAs homojunction diodes (1991)
Transport theory of the double heterojunction bipolar transistor based on current balancing concept (1986)
Nonlinear refractive-index and two photon-absorption near half the band gap in AlGaAs (1993)
Effects of dispersive two-photon transitions on femtosecond pulse propagation in semiconductor waveguides (1993)
Gas source molecular beam epitaxial growth model for Ga x In1−x As y P1−y on GaAs (1996)
Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy (1998)
Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells (2001)
Design of n-p-n AlGaAs double-heterojunction bipolar transistors (1987)
Abrupt heterointerfaces in Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As quantum well structure grown by liquid-phase epitaxy (1989)
Studies of low-surface 2-kT recombination current of the emitter-base heterojunction of heterojunction bipolar transistors (1990)
Current transport across the emitter-base potential spike in AlGaAs/GaAs heterojunction bipolar transistors (1985)
Effect of supersaturation on the interface abruptness of AlGaAs/GaAs/AlGaAs quantum well grown by liquid phase epitaxy (1993)
Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source (1987)
Single and multiple AlGaAs quantum-well structures grown by liquid-phase epitaxy (1990)
Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductor (1996)
Veröffentlichungen zu Lin, Hao-Hsiung.
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1
Lin, Hao-Hsiung., Liu, Yean-Shin. Current transport characteristics of P+/N AlxGa1−xAs homojunction diodes
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 70, No. 9 (1991), p. 5095-5100
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1991
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2
Lee, Si-Chen., Lin, Hao-Hsiung. Transport theory of the double heterojunction bipolar transistor based on current balancing concept
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 59, No. 5 (1986), p. 1688-1695
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1986
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3
Villeneuve, Alain., Yang, C. C.., ... Nonlinear refractive-index and two photon-absorption near half the band gap in AlGaAs
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 62, No. 20 (1993), p. 2465-2467
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1993
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4
Yang, C. C.., Villeneuve, Alain., ... Effects of dispersive two-photon transitions on femtosecond pulse propagation in semiconductor waveguides
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 10 (1993), p. 1304-1306
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1993
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5
Liu, Jin-Shung, Lee, Tsuen-Lin, ... Gas source molecular beam epitaxial growth model for Ga x In1−x As y P1−y on GaAs
in: Optical and quantum electronics , ISSN 1572-817X, Vol. 28 (10. 1996), p. 1269-1276
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1996
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6
Chen, Ming-Chin., Lin, Hao-Hsiung., ... Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 83, No. 6 (1998), p. 3061-3064
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1998
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7
Chen, Guan-Ru., Lin, Hao-Hsiung., ... Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 90, No. 12 (2001), p. 6230-6235
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2001
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8
Chen, Chung-Zen., Lee, Si-Chen., ... Design of n-p-n AlGaAs double-heterojunction bipolar transistors
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 62, No. 9 (1987), p. 3976-3979
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1987
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9
Chen, Jiahn-Ann., Lee, Jirhan-Huei., ... Abrupt heterointerfaces in Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As quantum well structure grown by liquid-phase epitaxy
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 65, No. 10 (1989), p. 4006-4009
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1989
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10
Wu, Chung-Cheng., Ting, Jing-Lung., ... Studies of low-surface 2-kT recombination current of the emitter-base heterojunction of heterojunction bipolar transistors
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 68, No. 4 (1990), p. 1766-1771
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1990
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11
Lee, Si-Chen., Kau, Jau-Nan., ... Current transport across the emitter-base potential spike in AlGaAs/GaAs heterojunction bipolar transistors
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 58, No. 2 (1985), p. 890-895
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1985
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12
Chen, Mu-Kuen., Chang, Tien-Chih., ... Effect of supersaturation on the interface abruptness of AlGaAs/GaAs/AlGaAs quantum well grown by liquid phase epitaxy
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 74, No. 5 (1993), p. 3464-3469
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1993
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13
Liu, Chee-Wee., Chen, Sheng-Li., ... Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 51, No. 20 (1987), p. 1634-1636
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1987
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14
Chen, Jiahn-Ann., Wang, Chin-Kun., ... Single and multiple AlGaAs quantum-well structures grown by liquid-phase epitaxy
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 68, No. 5 (1990), p. 2140-2145
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1990
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15
Tsen, K. T.., Ferry, D. K.., ... Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductor
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 69, No. 23 (1996), p. 3575-3577
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1996
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16
Liu, Biing-Der., Shieh, Tung-Ho., ... Stress-induced outdiffusion of Be in p+ GaAs prepared by molecular-beam epitaxy
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 72, No. 7 (1992), p. 2767-2772
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1992