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Si-Chen Lee

Veröffentlichungen von Si-Chen Lee zu Lee, Si-Chen. ->
weitere Veröffentlichungen von Si-Chen Lee:
Evidence for coupling of Si–Si lattice vibration and Si–D wagging vibration in deuterated amorphous silicon (1999)
Interfacial interaction between Al-1%Si and phosphorus-doped hydrogenated amorphous Si alloy at low temperature (1997)
Structural, optical, and electrical properties of hydrogenated amorphous silicon germanium alloys (1998)
Improved stability of deuterated amorphous silicon thin film transistors (1999)
Structural and electronic differences between deuterated and hydrogenated amorphous silicon (2000)
Mechanism for pillar-shaped surface morphology of polysilicon prepared by excimer laser annealing (2000)
Structural differences between deuterated and hydrogenated silicon nitride/oxynitride (2001)
Amorphous SiC/Si three-color detector (1988)
New model for the Staebler–Wronski effect in an amorphous silicon hydrogen alloy (1988)
Vertical monolithic integration of a GaAs/AlGaAs V-channeled substrate inner stripe laser diode and a heterojunction bipolar transistor (1990)
Monolithic integration of an AlGaAs/GaAs surface emitting laser diode and a photodetector (1991)
Emitter composition and geometry related surface recombination current of AlGaAs/GaAs heterojunction bipolar transistors (1992)
The structural and optical properties of a-SiNx:H prepared by plasma-enhanced chemical-vapor deposition (1992)
Transport mechanism of X band electrons in AlAs electrode through GaAs/AlAs/GaAs structure by varying GaAs well thickness (1993)
Observation of deep donor center related tunneling peak in the AlxGa1−xAs/AlAs/AlxGa1−xAs/AlAs/AlxGa1−xAs (0.40≤x≤0.50) resonant tunneling diodes (1993)
Veröffentlichungen zu Lee, Si-Chen.
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1
Shih, An., Lee, Si-Chen. Evidence for coupling of Si–Si lattice vibration and Si–D wagging vibration in deuterated amorphous silicon
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 74, No. 22 (1999), p. 3347-3349
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1999
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2
Liao, Wen-Shiang., Lee, Si-Chen. Interfacial interaction between Al-1%Si and phosphorus-doped hydrogenated amorphous Si alloy at low temperature
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 81, No. 12 (1997), p. 7793-7797
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1997
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3
Chou, Yu-Pin., Lee, Si-Chen. Structural, optical, and electrical properties of hydrogenated amorphous silicon germanium alloys
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 83, No. 8 (1998), p. 4111-4123
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1998
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4
Wei, Jeng-Hua., Lee, Si-Chen. Improved stability of deuterated amorphous silicon thin film transistors
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 85, No. 1 (1999), p. 543-550
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1999
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5
Shih, An., Yeh, Jiun-Lin., ... Structural and electronic differences between deuterated and hydrogenated amorphous silicon
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 88, No. 3 (2000), p. 1684-1687
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2000
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6
Shih, An., Meng, Chao-Yu., ... Mechanism for pillar-shaped surface morphology of polysilicon prepared by excimer laser annealing
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 88, No. 6 (2000), p. 3725-3733
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2000
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7
Shih, An., Yeh, Shin-Hung., ... Structural differences between deuterated and hydrogenated silicon nitride/oxynitride
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 89, No. 10 (2001), p. 5355-5361
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2001
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8
Tsai, Hsiung-Kuang., Lee, Si-Chen. Amorphous SiC/Si three-color detector
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 52, No. 4 (1988), p. 275-277
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1988
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9
Tzeng, Wen-Jer., Lee, Si-Chen. New model for the Staebler–Wronski effect in an amorphous silicon hydrogen alloy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 53, No. 21 (1988), p. 2044-2046
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1988
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10
Jan, Yu-Heng., Lee, Si-Chen. Vertical monolithic integration of a GaAs/AlGaAs V-channeled substrate inner stripe laser diode and a heterojunction bipolar transistor
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 57, No. 26 (1990), p. 2750-2752
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1990
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11
Chen, Ching-Hui., Lee, Si-Chen. Monolithic integration of an AlGaAs/GaAs surface emitting laser diode and a photodetector
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 27 (1991), p. 3592-3594
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1991
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12
Wu, Chung-Cheng., Lee, Si-Chen. Emitter composition and geometry related surface recombination current of AlGaAs/GaAs heterojunction bipolar transistors
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 72, No. 11 (1992), p. 5483-5488
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1992
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13
Lin, Kang-Cheng., Lee, Si-Chen. The structural and optical properties of a-SiNx:H prepared by plasma-enhanced chemical-vapor deposition
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 72, No. 11 (1992), p. 5474-5482
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1992
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14
Shieh, Tung-Ho., Lee, Si-Chen. Transport mechanism of X band electrons in AlAs electrode through GaAs/AlAs/GaAs structure by varying GaAs well thickness
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 24 (1993), p. 3350-3352
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1993
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15
Shieh, Tung-Ho., Lee, Si-Chen. Observation of deep donor center related tunneling peak in the AlxGa1−xAs/AlAs/AlxGa1−xAs/AlAs/AlxGa1−xAs (0.40≤x≤0.50) resonant tunneling diodes
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 5 (1993), p. 654-656
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1993
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16
Shieh, Tung-Ho., Lee, Si-Chen. Resonant tunneling of X-band electrons from AlAs through GaAs/AlAs/GaAs double barrier structure
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 9 (1993), p. 1219-1221
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1993
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17
Wei, Jeng-Hua., Lee, Si-Chen. Electrical and optical properties of implanted amorphous silicon
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 76, No. 2 (1994), p. 1033-1040
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1994
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18
Chou, Jenq-Shiuh., Lee, Si-Chen. Improved process for liquid phase deposition of silicon dioxide
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 64, No. 15 (1994), p. 1971-1973
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1994
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19
Chou, Jenq-Shiuh., Lee, Si-Chen. Effect of porosity on infrared-absorption spectra of silicon dioxide
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 77, No. 4 (1995), p. 1805-1807
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1995
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20
Lee, Si-Chen., Lin, Hao-Hsiung. Transport theory of the double heterojunction bipolar transistor based on current balancing concept
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 59, No. 5 (1986), p. 1688-1695
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1986