Anmelden/Registrieren
Erscheinungsjahr:
 
Zurück zur geteilten Ansicht
J. Kanicki

Veröffentlichungen von J. Kanicki zu Kanicki, J. ->
weitere Veröffentlichungen von J. Kanicki:
Spatial charge distribution in the plasma-enhanced chemical vapor deposited nitrogen-rich silicon nitride (1989)
Investigation of the light-induced effects in nitrogen-rich silicon nitride films (1989)
Electrical and photovoltaic properties of metal contacts to trans-polyacetylene (1984)
Photocreation and photobleaching of a-Si N"1"."6:H/c-Si interface states studied by photocapacitance transient spectroscopy (1993)
Direct observation of the silicon nitride on amorphous silicon interface states (1990)
Bias stress-induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the "carrier-induced defect creation'' model correct? (1990)
Photodarkening and bleaching in amorphous silicon nitride (1990)
Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors (1993)
Observation of multiple silicon dangling bond configurations in silicon nitride (1989)
Si and N dangling bond creation in silicon nitride thin films (1993)
Some electrical properties of amorphous silicon/amorphous silicon nitride interfaces: Top nitride and bottom nitride configurations in MNS and TFT devices (1992)
Selective deposition of polycrystalline silicon thin films at low temperature by hot-wire chemical vapor deposition (1996)
Electrical and photovoltaic properties of Pb/trans- (CH)x and Pb/[CH(AsF5)y]x schottky barriers (1984)
Novel approach to the study of electrical conduction in bromine-doped polyacetylene (1982)
Stability of electrical properties of nitrogen-rich, silicon-rich, and stoichiometric silicon nitride films (1989)
Veröffentlichungen zu Kanicki, J.
Zurück zur geteilten Ansicht
Verfasser Titel Jahr absteigend sortierenaufsteigend sortieren
zeige Details
1
Kanicki, J.., Hug, S.. Spatial charge distribution in the plasma-enhanced chemical vapor deposited nitrogen-rich silicon nitride
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 54, No. 8 (1989), p. 733-735
Zugang: zum Volltext
ähnliche Vorschläge
1989
zeige Details
2
Jousse, D.., Kanicki, J.. Investigation of the light-induced effects in nitrogen-rich silicon nitride films
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 55, No. 11 (1989), p. 1112-1114
Zugang: zum Volltext
ähnliche Vorschläge
1989
zeige Details
3
Fedorko, P., Kanicki, J. Electrical and photovoltaic properties of metal contacts to trans-polyacetylene
in: Thin Solid Films, in: Thin Solid Films . - Amsterdam : Elsevier, ISSN 0040-6090, ZDB-ID 1482896-0 Vol. 113, No. 1 (1984), p. 1-14
Zugang: zum Volltext
ähnliche Vorschläge
1984
zeige Details
4
Godet, C., Kanicki, J. Photocreation and photobleaching of a-Si N"1"."6:H/c-Si interface states studied by photocapacitance transient spectroscopy
in: Physica B: Physics of Condensed Matter, in: Physica B: Physics of Condensed Matter . - Amsterdam : Elsevier, ISSN 0921-4526, ZDB-ID 1466579-7 Vol. 185, No. 1-4 (1993), p. 542-545
Zugang: zum Volltext
ähnliche Vorschläge
1993
zeige Details
5
Gelatos, A. V.., Kanicki, J.. Direct observation of the silicon nitride on amorphous silicon interface states
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 56, No. 10 (1990), p. 940-942
Zugang: zum Volltext
ähnliche Vorschläge
1990
zeige Details
6
Gelatos, A. V.., Kanicki, J.. Bias stress-induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the "carrier-induced defect creation'' model correct?
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 57, No. 12 (1990), p. 1197-1199
Zugang: zum Volltext
ähnliche Vorschläge
1990
zeige Details
7
Seager, C. H.., Kanicki, J.. Photodarkening and bleaching in amorphous silicon nitride
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 57, No. 14 (1990), p. 1378-1380
Zugang: zum Volltext
ähnliche Vorschläge
1990
zeige Details
8
Libsch, F. R.., Kanicki, J.. Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 62, No. 11 (1993), p. 1286-1288
Zugang: zum Volltext
ähnliche Vorschläge
1993
zeige Details
9
Jousse, D.., Kanicki, J.., ... Observation of multiple silicon dangling bond configurations in silicon nitride
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 54, No. 11 (1989), p. 1043-1045
Zugang: zum Volltext
ähnliche Vorschläge
1989
zeige Details
10
Warren, W. L.., Robertson, J.., ... Si and N dangling bond creation in silicon nitride thin films
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 19 (1993), p. 2685-2687
Zugang: zum Volltext
ähnliche Vorschläge
1993
zeige Details
11
Godet, C.., Kanicki, J.., ... Some electrical properties of amorphous silicon/amorphous silicon nitride interfaces: Top nitride and bottom nitride configurations in MNS and TFT devices
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 71, No. 10 (1992), p. 5022-5032
Zugang: zum Volltext
ähnliche Vorschläge
1992
zeige Details
12
Yu, S.., Gulari, E.., ... Selective deposition of polycrystalline silicon thin films at low temperature by hot-wire chemical vapor deposition
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 68, No. 19 (1996), p. 2681-2683
Zugang: zum Volltext
ähnliche Vorschläge
1996
zeige Details
13
Donckt, E. Vander., Kanicki, J.., ... Electrical and photovoltaic properties of Pb/trans- (CH)x and Pb/[CH(AsF5)y]x schottky barriers
in: Journal of Applied Polymer Science, in: Journal of Applied Polymer Science . - New York, NY [u.a.] : Wiley, ISSN 0021-8995, ZDB-ID 1491105-x Vol. 29 (2. 1984), p. 619-627
Zugang: zum Volltext
ähnliche Vorschläge
1984
zeige Details
14
Kanicki, J., Boue, S., ... Novel approach to the study of electrical conduction in bromine-doped polyacetylene
in: Thin Solid Films, in: Thin Solid Films . - Amsterdam : Elsevier, ISSN 0040-6090, ZDB-ID 1482896-0 Vol. 92, No. 3 (1982), p. 243-251
Zugang: zum Volltext
ähnliche Vorschläge
1982
zeige Details
15
Lau, W. S.., Fonash, S. J.., ... Stability of electrical properties of nitrogen-rich, silicon-rich, and stoichiometric silicon nitride films
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 66, No. 6 (1989), p. 2765-2767
Zugang: zum Volltext
ähnliche Vorschläge
1989
zeige Details
16
Kanicki, J.., Libsch, F. R.., ... Performance of thin hydrogenated amorphous silicon thin-film transistors
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 69, No. 4 (1991), p. 2339-2345
Zugang: zum Volltext
ähnliche Vorschläge
1991
zeige Details
17
Warren, W. L.., Kanicki, J.., ... Energy level of the nitrogen dangling bond in amorphous silicon nitride
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 14 (1991), p. 1699-1701
Zugang: zum Volltext
ähnliche Vorschläge
1991
zeige Details
18
Zelikson, M.., Weiser, K.., ... Threshold and saturation effects for photosignals in an amorphous silicon waveguide structure
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 21 (1991), p. 2660-2662
Zugang: zum Volltext
ähnliche Vorschläge
1991
zeige Details
19
Zelikson, M.., Salzman, J.., ... Enhanced electro-optic effect in amorphous hydrogenated silicon based waveguides
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 61, No. 14 (1992), p. 1664-1666
Zugang: zum Volltext
ähnliche Vorschläge
1992
zeige Details
20
Kung, J.-H., Hatalis, M.K., ... Investigations on the quality of polysilicon film-gate dielectric interface in polysilicon thin film transistors
in: Thin Solid Films, in: Thin Solid Films . - Amsterdam : Elsevier, ISSN 0040-6090, ZDB-ID 1482896-0 Vol. 216, No. 1 (1992), p. 137-141
Zugang: zum Volltext
ähnliche Vorschläge
1992