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M. Guzzi

Veröffentlichungen von M. Guzzi zu Guzzi, L. M. ->
weitere Veröffentlichungen von M. Guzzi:
Luminescence decay in CdIn2S4 single crystals (1983)
Recombination centres and traps in ZnIn"2S"4 (1975)
Luminescence and energy levels of Sm^2^+ in alkali halides (1973)
Lifetime of the Sm^+^+ ^5D"0 -> ^7F"0 emission in alkali halides (1970)
Direct excitonic transitions in indium monobromide (1982)
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots (2000)
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates (2000)
Fourier transform spectroscopy applied to photoluminescence: Advantages and warnings (1996)
Be doping of (311)A and (100) Al0.24Ga0.76As grown by molecular beam epitaxy (1996)
Photoluminescence determination of the Be binding energy in direct-gap AlGaAs (1997)
Assessment of civilian air ambulance operation capabilities in The United States (1996)
An optical fibre sensor for characterizing monodispersive and quasi-monodispersive particulates (1994)
Influence of the cation mixing on the photoelectronic properties of the Zn"xCd"1"-"xIn"2S"4 (III) layered compounds (1984)
Fundamental optical constants of CdIn"2S"4 (1978)
Optical properties of ZrS"3 and ZrSe"3 (1981)
Veröffentlichungen zu Guzzi, L. M.
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1
Guzzi, L. M., Fiorentino, S., ... Assessment of civilian air ambulance operation capabilities in The United States
in: Intensive care medicine , ISSN 1432-1238, Vol. 22 (1. 1996), p. S100
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1996
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2
Galbiati, N.., Pavesi, L.., ... Be doping of (311)A and (100) Al0.24Ga0.76As grown by molecular beam epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 69, No. 27 (1996), p. 4215-4217
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1996
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3
Grilli, E., Guzzi, M., ... Influence of the cation mixing on the photoelectronic properties of the Zn"xCd"1"-"xIn"2S"4 (III) layered compounds
in: Progress In Crystal Growth And Characterization, in: Progress In Crystal Growth And Characterization . - Amsterdam : Elsevier, ISSN 0146-3535, ZDB-ID 1479022-1 Vol. 10 (1984), p. 329-336
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1984
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4
Kurita, S., Staehli, J.L., ... Optical properties of ZrS"3 and ZrSe"3
in: Physica B+C, in: Physica B+C . - Amsterdam : Elsevier, ISSN 0378-4363, ZDB-ID 2208195-1 Vol. 105, No. 1-3 (1981), p. 169-173
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1981
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5
Staehli, J.L., Capozzi, V., ... Gain spectra of GaSe
in: Physica B+C, in: Physica B+C . - Amsterdam : Elsevier, ISSN 0378-4363, ZDB-ID 2208195-1 Vol. 105, No. 1-3 (1981), p. 35-39
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1981
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6
Capozzi, V., Staehli, J.L., ... A simple apparatus for the direct measurement of optical gain spectra
in: Optics Communications, in: Optics Communications . - Amsterdam : Elsevier, ISSN 0030-4018, ZDB-ID 1468811-6 Vol. 38, No. 4 (1981), p. 284-288
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1981
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7
Grilli, E.., Guzzi, M.., ... Effects of different processes with hydrogen on the photoluminescence of GaAlAs:Si grown by molecular beam epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 57, No. 26 (1990), p. 2797-2799
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1990
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8
Bosacchi, A., Franchi, S., ... A photoluminescence study of the effects of hydrogen on deep levels in MBE grown GaAlAs:Si
in: Physica B: Physics of Condensed Matter, in: Physica B: Physics of Condensed Matter . - Amsterdam : Elsevier, ISSN 0921-4526, ZDB-ID 1466579-7 Vol. 170, No. 1-4 (1991), p. 540-544
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1991
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9
Modesti, S., Quagliano, L.G., ... High-excitation luminescence in direct-GAP GaAs"1"-"xP"x: E-H plasma expansion effects
in: Journal of Luminescence, in: Journal of Luminescence . - Amsterdam : Elsevier, ISSN 0022-2313, ZDB-ID 1491401-3 Vol. 24-25 (1981), p. 581-584
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1981
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10
Anedda, A., Cugusi, L., ... Fundamental optical constant of the layered semiconductor ZnIn"2S"4
in: Solid State Communications, in: Solid State Communications . - Amsterdam : Elsevier, ISSN 0038-1098, ZDB-ID 1467698-9 Vol. 29, No. 12 (1979), p. 829-834
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1979
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11
Mutti, P.., Ghislotti, G.., ... Room-temperature visible luminescence from silicon nanocrystals in silicon implanted SiO2 layers
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 66, No. 7 (1995), p. 851-853
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1995
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12
Bosacchi, A., Franchi, S., ... DLTS and photoluminescence of MBE GaAs grown in the presence of hydrogen
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 81, No. 1-4 (1987), p. 181-187
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1987
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13
Brusaferri, L.., Sanguinetti, S.., ... Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 69, No. 22 (1996), p. 3354-3356
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1996
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14
Capizzi, M., Frova, A., ... The e-h plasma in direct-gap GaAlas under 3-d confinement
in: Physica B+C, in: Physica B+C . - Amsterdam : Elsevier, ISSN 0378-4363, ZDB-ID 2208195-1 Vol. 117-118 (1983), p. 333-335
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1983