Anmelden/Registrieren
Erscheinungsjahr:
 
Zurück zur geteilten Ansicht
Si-Chen Lee

Veröffentlichungen von Si-Chen Lee zu Chen, Tung-Ho. ->
weitere Veröffentlichungen von Si-Chen Lee:
Evidence for coupling of Si–Si lattice vibration and Si–D wagging vibration in deuterated amorphous silicon (1999)
Interfacial interaction between Al-1%Si and phosphorus-doped hydrogenated amorphous Si alloy at low temperature (1997)
Structural, optical, and electrical properties of hydrogenated amorphous silicon germanium alloys (1998)
Improved stability of deuterated amorphous silicon thin film transistors (1999)
Structural and electronic differences between deuterated and hydrogenated amorphous silicon (2000)
Mechanism for pillar-shaped surface morphology of polysilicon prepared by excimer laser annealing (2000)
Structural differences between deuterated and hydrogenated silicon nitride/oxynitride (2001)
Amorphous SiC/Si three-color detector (1988)
New model for the Staebler–Wronski effect in an amorphous silicon hydrogen alloy (1988)
Vertical monolithic integration of a GaAs/AlGaAs V-channeled substrate inner stripe laser diode and a heterojunction bipolar transistor (1990)
Monolithic integration of an AlGaAs/GaAs surface emitting laser diode and a photodetector (1991)
Emitter composition and geometry related surface recombination current of AlGaAs/GaAs heterojunction bipolar transistors (1992)
The structural and optical properties of a-SiNx:H prepared by plasma-enhanced chemical-vapor deposition (1992)
Transport mechanism of X band electrons in AlAs electrode through GaAs/AlAs/GaAs structure by varying GaAs well thickness (1993)
Observation of deep donor center related tunneling peak in the AlxGa1−xAs/AlAs/AlxGa1−xAs/AlAs/AlxGa1−xAs (0.40≤x≤0.50) resonant tunneling diodes (1993)
Veröffentlichungen zu Chen, Tung-Ho. von Lee, Si-Chen.[x][x]
Zurück zur geteilten Ansicht
Verfasser Titel Jahr absteigend sortierenaufsteigend sortieren
zeige Details
1
Liu, Biing-Der., Shieh, Tung-Ho., ... Stress-induced outdiffusion of Be in p+ GaAs prepared by molecular-beam epitaxy
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 72, No. 7 (1992), p. 2767-2772
Zugang: zum Volltext
ähnliche Vorschläge
1992
The well-known abnormal outdiffusion problem of heavily Be-doped GaAs prepared by molecular-beam epitaxy was found to be initiated by the shrinkage of the lattice constant of the (p+) GaAs epilayer. Through detailed investigation of the double-crystal x-ray spectra, van der Pauw measurements,... mehr
beteiligte Personen: Liu, Biing-Der. , Shieh, Tung-Ho. , Wu, Meng-Yueh. , Chang, Tien-Chih. , Lee, Si-Chen. , Lin, Hao-Hsiung.
Erschienen: 1992.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.351527
zeige Details
2
Shieh, Tung-Ho., Wu, Chung-Cheng., ... Observation of X-band electron quantum interference and transport through virtual states in AlxGa1−xAs/AlAs heterostructures
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 74, No. 6 (1993), p. 4229-4232
Zugang: zum Volltext
ähnliche Vorschläge
1993
zeige Details
3
Shieh, Tung-Ho., Lee, Si-Chen. Transport mechanism of X band electrons in AlAs electrode through GaAs/AlAs/GaAs structure by varying GaAs well thickness
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 24 (1993), p. 3350-3352
Zugang: zum Volltext
ähnliche Vorschläge
1993
zeige Details
4
Shieh, Tung-Ho., Lee, Si-Chen. Observation of deep donor center related tunneling peak in the AlxGa1−xAs/AlAs/AlxGa1−xAs/AlAs/AlxGa1−xAs (0.40≤x≤0.50) resonant tunneling diodes
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 5 (1993), p. 654-656
Zugang: zum Volltext
ähnliche Vorschläge
1993
zeige Details
5
Shieh, Tung-Ho., Lee, Si-Chen. Resonant tunneling of X-band electrons from AlAs through GaAs/AlAs/GaAs double barrier structure
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 9 (1993), p. 1219-1221
Zugang: zum Volltext
ähnliche Vorschläge
1993