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F. Balestra

Veröffentlichungen von F. Balestra zu Balestra, F. ->
weitere Veröffentlichungen von F. Balestra:
Subakute rekurrierende Enzephalopathie im Rahmen eines idiopathischen hypereosinophilen Syndroms (1999)
Analysis of the latch phenomenon in thin film SOI MOSFET's as a function of temperature (1992)
Analysis of the dependence of the subthreshold swing and the threshold voltage on the substrate voltage of thin-film SOI MOSFETs. Extraction of the interface state densities (1992)
Modelling of ohmic MOSFET operation at very low temperature (1988)
A method for MOSFET parameter extraction at very low temperature (1989)
Brief review of the MOS device physics for low temperature electronics (1994)
Flicker noise in metal-oxide-semiconductor transistors from liquid helium to room temperature (1989)
Assessment of interface state density in silicon metal-oxide-semiconductor transistors at room, liquid-nitrogen, and liquid-helium temperatures (1990)
Characterization and modeling of silicon metal-oxide-semiconductor transistors at liquid-helium temperature: Influence of source-drain series resistances (1990)
A survey of MOS device physics for low temperature electronics (1992)
Low frequency noise in silicon on insulator MOSFET's: Experimental and numerical simulation results (1993)
On the understanding of electron and hole mobility models from room to liquid helium temperatures (1994)
On the universal electric field dependence of the electron and hole effective mobility in MOS inversion layers (1994)
Influence of substrate freeze-out on the characteristics of MOS transistors at very low temperatures (1987)
Deep depleted SOI MOSFETs with back potential control: A numerical simulation (1985)
Veröffentlichungen zu Balestra, F.
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1
Balestra, B.. Subakute rekurrierende Enzephalopathie im Rahmen eines idiopathischen hypereosinophilen Syndroms
In: Deutsche medizinische Wochenschrift. - Stuttgart : Thieme Vol. 124, No. 11 (3. 1999), p. 321-324
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1999
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2
Balestra, F. Analysis of the latch phenomenon in thin film SOI MOSFET's as a function of temperature
in: Microelectronic Engineering, in: Microelectronic Engineering . - Amsterdam : Elsevier, ISSN 0167-9317, ZDB-ID 1497065-X Vol. 19, No. 1-4 (1992), p. 811-814
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1992
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3
Balestra, F. Analysis of the dependence of the subthreshold swing and the threshold voltage on the substrate voltage of thin-film SOI MOSFETs. Extraction of the interface state densities
in: Solid State Electronics, in: Solid State Electronics . - Amsterdam : Elsevier, ISSN 0038-1101, ZDB-ID 2012825-3 Vol. 35, No. 12 (1992), p. 1783-1786
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1992
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4
Ghibaudo, G., Balestra, F. Modelling of ohmic MOSFET operation at very low temperature
in: Solid State Electronics, in: Solid State Electronics . - Amsterdam : Elsevier, ISSN 0038-1101, ZDB-ID 2012825-3 Vol. 31, No. 1 (1988), p. 105-108
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1988
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5
Ghibaudo, G., Balestra, F. A method for MOSFET parameter extraction at very low temperature
in: Solid State Electronics, in: Solid State Electronics . - Amsterdam : Elsevier, ISSN 0038-1101, ZDB-ID 2012825-3 Vol. 32, No. 3 (1989), p. 221-223
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1989
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6
Balestra, F., Ghibaudo, G. Brief review of the MOS device physics for low temperature electronics
in: Solid State Electronics, in: Solid State Electronics . - Amsterdam : Elsevier, ISSN 0038-1101, ZDB-ID 2012825-3 Vol. 37, No. 12 (1994), p. 1967-1975
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1994
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7
Hafez, I. M.., Ghibaudo, G.., ... Flicker noise in metal-oxide-semiconductor transistors from liquid helium to room temperature
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 66, No. 5 (1989), p. 2211-2213
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1989
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8
Hafez, I. M.., Ghibaudo, G.., ... Assessment of interface state density in silicon metal-oxide-semiconductor transistors at room, liquid-nitrogen, and liquid-helium temperatures
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 67, No. 4 (1990), p. 1950-1952
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1990
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9
Hafez, I. M.., Balestra, F.., ... Characterization and modeling of silicon metal-oxide-semiconductor transistors at liquid-helium temperature: Influence of source-drain series resistances
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 68, No. 7 (1990), p. 3694-3700
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1990
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10
Ghibaudo, G., Balestra, F., ... A survey of MOS device physics for low temperature electronics
in: Microelectronic Engineering, in: Microelectronic Engineering . - Amsterdam : Elsevier, ISSN 0167-9317, ZDB-ID 1497065-X Vol. 19, No. 1-4 (1992), p. 833-840
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1992
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11
Jomaah, J., Balestra, F., ... Low frequency noise in silicon on insulator MOSFET's: Experimental and numerical simulation results
in: Microelectronic Engineering, in: Microelectronic Engineering . - Amsterdam : Elsevier, ISSN 0167-9317, ZDB-ID 1497065-X Vol. 22, No. 1-4 (1993), p. 383-386
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1993
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12
Emrani, A., Balestra, F., ... On the understanding of electron and hole mobility models from room to liquid helium temperatures
in: Solid State Electronics, in: Solid State Electronics . - Amsterdam : Elsevier, ISSN 0038-1101, ZDB-ID 2012825-3 Vol. 37, No. 10 (1994), p. 1723-1730
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1994
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13
Emrani, A., Ghibaudo, G., ... On the universal electric field dependence of the electron and hole effective mobility in MOS inversion layers
in: Solid State Electronics, in: Solid State Electronics . - Amsterdam : Elsevier, ISSN 0038-1101, ZDB-ID 2012825-3 Vol. 37, No. 1 (1994), p. 111-113
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1994
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14
Balestra, F., Audaire, L., ... Influence of substrate freeze-out on the characteristics of MOS transistors at very low temperatures
in: Solid State Electronics, in: Solid State Electronics . - Amsterdam : Elsevier, ISSN 0038-1101, ZDB-ID 2012825-3 Vol. 30, No. 3 (1987), p. 321-327
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1987
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15
Balestra, F., Brini, J., ... Deep depleted SOI MOSFETs with back potential control: A numerical simulation
in: Solid State Electronics, in: Solid State Electronics . - Amsterdam : Elsevier, ISSN 0038-1101, ZDB-ID 2012825-3 Vol. 28, No. 10 (1985), p. 1031-1037
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1985
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16
Balestra, F., Brini, J., ... Analytical modelling of ultra-thin film depletion-mode SOI MOSFETs
in: Solid State Electronics, in: Solid State Electronics . - Amsterdam : Elsevier, ISSN 0038-1101, ZDB-ID 2012825-3 Vol. 34, No. 12 (1991), p. 1361-1364
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1991
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17
Balestra, F., Brini, J., ... Simulation of deep depleted SOI MOSFET's with back potential control
in: Physica B+C, in: Physica B+C . - Amsterdam : Elsevier, ISSN 0378-4363, ZDB-ID 2208195-1 Vol. 129, No. 1-3 (1985), p. 296-300
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1985
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18
Rozeau, O., Jomaah, J., ... SOI Technologies Overview for Low-Power Low-Voltage Radio-Frequency Applications
in: Analog integrated circuits and signal processing , ISSN 1573-1979, Vol. 25 (2. 2000), p. 93-114
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2000
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19
Rocofyllou, E., Galiouna Nassiopoulos, A., ... Anomalous behaviour of n-channel MOS transistor characteristics in the temperature range 4.2-14 K
in: Solid State Electronics, in: Solid State Electronics . - Amsterdam : Elsevier, ISSN 0038-1101, ZDB-ID 2012825-3 Vol. 32, No. 8 (1989), p. 603-605
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1989
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20
Hafez, I.M., Ghibaudo, G., ... A study of flicker noise in MOS transistors operated at room and liquid helium temperatures
in: Solid State Electronics, in: Solid State Electronics . - Amsterdam : Elsevier, ISSN 0038-1101, ZDB-ID 2012825-3 Vol. 33, No. 12 (1990), p. 1525-1529
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1990