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S. de Unamuno

Veröffentlichungen von S. de Unamuno zu de Unamuno, S. ->
weitere Veröffentlichungen von S. de Unamuno:
A thermal description of the melting of c- and a-silicon under pulsed excimer lasers (1989)
Experimental signs pointing to a Bayesian instead of a classical approach for experiments with a small number of events (1987)
Laser-projection-patterned etching of GaAs in a chlorine atmosphere (1992)
Erratum: "Laser-projection-patterned etching of GaAs in a chlorine atmosphere'' [J. Appl. Phys. 71, 2898 (1992)] (1992)
Raman analysis of the modifications induced by laser processing and hydrogen implantation in carbon films deposited by the ablation technique (1994)
Excimer laser induced melting of heavily doped silicon: A contribution to the optimization of the laser doping process (1989)
Low-temperature synthesis of silicon oxide, oxynitride, and nitride films by pulsed excimer laser ablation (1994)
Super-lateral-growth regime analysis in long-pulse-duration excimer-laser crystallization of a-Si films on SiO2 (1999)
Laser-induced modifications in a-C:H thin films (1993)
Influence of hydrogen on the structure and surface morphology of pulsed ArF excimer laser crystallized amorphous silicon thin films (1992)
Pulsed laser crystallization and doping for the fabrication of high-quality poly-Si TFTs (1993)
One-step growth of polycrystalline silicon thin films at low-temperature by ArF excimer laser-induced photo-CVD (1992)
Pulsed excimer and Nd:YAG laser crystallization of a-Si:H - The specific role of hydrogen (1990)
Comparison between microscopical aspects of a-Si films crystallized by pulsed UV excimer laser and calculated temperature profiles (1989)
Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivity (1989)
Veröffentlichungen zu de Unamuno, S.
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1
de Unamuno, S., Fogarassy, E. A thermal description of the melting of c- and a-silicon under pulsed excimer lasers
in: Applied Surface Science, in: Applied Surface Science . - Amsterdam : Elsevier, ISSN 0169-4332, ZDB-ID 2002520-8 Vol. 36, No. 1-4 (1989), p. 1-11
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1989
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2
Escoubes, B., De Unamuno, S., ... Experimental signs pointing to a Bayesian instead of a classical approach for experiments with a small number of events
in: Nuclear Instruments and Methods in Physics Research Section A:, in: Nuclear Instruments and Methods in Physics Research Section A: . - Amsterdam : Elsevier, ISSN 0168-9002, ZDB-ID 1466532-3 Vol. 257, No. 2 (1987), p. 346-360
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1987
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3
Foulon, F.., Green, Mino., ... Laser-projection-patterned etching of GaAs in a chlorine atmosphere
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 71, No. 6 (1992), p. 2898-2907
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1992
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4
Foulon, F.., Green, Mino., ... Erratum: "Laser-projection-patterned etching of GaAs in a chlorine atmosphere'' [J. Appl. Phys. 71, 2898 (1992)]
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 72, No. 7 (1992), p. 3225-3225
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1992
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5
Antoni, F., Prevot, B., ... Raman analysis of the modifications induced by laser processing and hydrogen implantation in carbon films deposited by the ablation technique
in: Thin Solid Films, in: Thin Solid Films . - Amsterdam : Elsevier, ISSN 0040-6090, ZDB-ID 1482896-0 Vol. 241, No. 1-2 (1994), p. 88-91
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1994
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6
Fogarassy, E., Fuchs, C., ... Excimer laser induced melting of heavily doped silicon: A contribution to the optimization of the laser doping process
in: Applied Surface Science, in: Applied Surface Science . - Amsterdam : Elsevier, ISSN 0169-4332, ZDB-ID 2002520-8 Vol. 43, No. 1-4 (1989), p. 316-320
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1989
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7
Fogarassy, E.., Fuchs, C.., ... Low-temperature synthesis of silicon oxide, oxynitride, and nitride films by pulsed excimer laser ablation
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 76, No. 5 (1994), p. 2612-2620
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1994
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8
Fogarassy, E., de Unamuno, S., ... Super-lateral-growth regime analysis in long-pulse-duration excimer-laser crystallization of a-Si films on SiO2
in: Applied physics , ISSN 1432-0630, Vol. 68 (6. 1999), p. 631-635
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1999
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9
Spousta, J., Perriere, J., ... Laser-induced modifications in a-C:H thin films
in: Applied Surface Science, in: Applied Surface Science . - Amsterdam : Elsevier, ISSN 0169-4332, ZDB-ID 2002520-8 Vol. 69, No. 1-4 (1993), p. 242-248
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1993
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10
Mathe, E.L., Naudon, A., ... Influence of hydrogen on the structure and surface morphology of pulsed ArF excimer laser crystallized amorphous silicon thin films
in: Applied Surface Science, in: Applied Surface Science . - Amsterdam : Elsevier, ISSN 0169-4332, ZDB-ID 2002520-8 Vol. 54 (1992), p. 392-400
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1992
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11
Fogarassy, E., Pattyn, H., ... Pulsed laser crystallization and doping for the fabrication of high-quality poly-Si TFTs
in: Applied Surface Science, in: Applied Surface Science . - Amsterdam : Elsevier, ISSN 0169-4332, ZDB-ID 2002520-8 Vol. 69, No. 1-4 (1993), p. 231-241
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1993
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12
Elliq, M., Fogarassy, E., ... One-step growth of polycrystalline silicon thin films at low-temperature by ArF excimer laser-induced photo-CVD
in: Applied Surface Science, in: Applied Surface Science . - Amsterdam : Elsevier, ISSN 0169-4332, ZDB-ID 2002520-8 Vol. 54 (1992), p. 35-40
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1992
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13
Elliq, M., Fogarassy, E., ... Pulsed excimer and Nd:YAG laser crystallization of a-Si:H - The specific role of hydrogen
in: Applied Surface Science, in: Applied Surface Science . - Amsterdam : Elsevier, ISSN 0169-4332, ZDB-ID 2002520-8 Vol. 46, No. 1-4 (1990), p. 378-382
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1990
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14
Maillou, J.G., Mathe, E.L., ... Comparison between microscopical aspects of a-Si films crystallized by pulsed UV excimer laser and calculated temperature profiles
in: Applied Surface Science, in: Applied Surface Science . - Amsterdam : Elsevier, ISSN 0169-4332, ZDB-ID 2002520-8 Vol. 43, No. 1-4 (1989), p. 150-157
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1989
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15
Mathe, E.L., Maillou, J.G., ... Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivity
in: Applied Surface Science, in: Applied Surface Science . - Amsterdam : Elsevier, ISSN 0169-4332, ZDB-ID 2002520-8 Vol. 43, No. 1-4 (1989), p. 142-149
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1989
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16
Repplinger, F., Fogarassy, E., ... Preparation of Si"1"-"xGe"x thin crystalline films by pulsed excimer laser annealing of heavily Ge implanted Si
in: Thin Solid Films, in: Thin Solid Films . - Amsterdam : Elsevier, ISSN 0040-6090, ZDB-ID 1482896-0 Vol. 241, No. 1-2 (1994), p. 155-158
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1994
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17
Czyzewski, O., Escoubes, B., ... Charge exchange and the reaction p + p -> n + n + π^+ + π^- of 3.0, 3.6 and 4.0 GeV/c antiprotons
in: Physics Letters, in: Physics Letters . - Amsterdam : Elsevier, ISSN 0031-9163, ZDB-ID 2207670-0 Vol. 20, No. 5 (1966), p. 554-557
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1966
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18
Fett, E., Haatuft, A., ... Measurement of the branching ratios of multi-pion final states in pp annihilation at 1.6 GeV/c
in: Nuclear Physics, Section B, in: Nuclear Physics, Section B . - Amsterdam : Elsevier, ISSN 0550-3213, ZDB-ID 1466567-0 Vol. 130, No. 1 (1977), p. 1-17
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1977
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19
Baglin, C., Bezaguet, A., ... Heavy liquid bubble chamber analysis of η^0 neutral decay modes: η^o -> 3π^0 and η^0 -> γγ
in: Nuclear Physics, Section B, in: Nuclear Physics, Section B . - Amsterdam : Elsevier, ISSN 0550-3213, ZDB-ID 1466567-0 Vol. 22, No. 1 (1970), p. 66-84
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1970
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20
Fett, E., Haatuft, A., ... Correction of effects due to reactions on complex nuclei in a sample of hydrogen-like p annihilations from a heavy liquid bubble chamber experiment
in: Nuclear Instruments and Methods, in: Nuclear Instruments and Methods . - Amsterdam : Elsevier, ISSN 0029-554X, ZDB-ID 2205646-4 Vol. 144, No. 2 (1977), p. 109-118
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1977