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Robert F. Davis

Veröffentlichungen von Robert F. Davis zu Zheleva, Tsvetanka S.. ->
weitere Veröffentlichungen von Robert F. Davis:
Sulfur in Amine Solvents1 (1962)
Electrochemical Studies of Some Iron-Protoporphyrin Complexes (1966)
Chemistry of the sulfur-nitrogen bond. V. Evidence for an intermolecular rearrangement in the rearrangement of arenesulfenanilides to o- and p-aminodiphenyl sulfides (1973)
Effect of wavelength in the gas-phase photolysis of carbon tetrachloride at 253.7, 184.9, 147.0, and 106.7 nm (1975)
Osmotic coefficients of aqueous lithium chloride and potassium chloride from their isopiestic ratios to sodium chloride at 45.degree.C (1985)
Reaction intermediates in the alkylation of pyridine with tert-butyllithium (1974)
MATHEMATICS (1965)
Tricyclic ketones via cyclodehydration of bicyclic unsaturated acids (1973)
Hydrothermolysis of a Silica-Immobilized Diphenylethane (1995)
Versatile slot burner design for atomic absorption spectrometry (1986)
Effect of Cephalic Pressure on Fetal Cerebral Blood Flow (1984)
Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy (1993)
1,3-Dipolar Cycloaddition Reactions of Nitrones (1975)
Structural and microstructural transitions during phase separation and crystallization of Al2O3-SiO2-P2O5-Y2O3 glass (1983)
Reactions of Elemental Sulfur. IV. Catalytic Effects in the Reaction of Sulfur with Triphenylphosphine (1961)
Veröffentlichungen zu Zheleva, Tsvetanka S..
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1
Zheleva, Tsvetanka S.., Nam, Ok-Hyun., ... Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 71, No. 17 (1997), p. 2472-2474
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1997
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2
Nam, Ok-Hyun., Bremser, Michael D.., ... Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 71, No. 18 (1997), p. 2638-2640
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1997
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3
Zheleva, Tsvetanka S.., Ashmawi, Waeil M.., ... Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 74, No. 17 (1999), p. 2492-2494
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1999