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T. E. Whall

Veröffentlichungen von T. E. Whall zu Whall, T. E. ->
weitere Veröffentlichungen von T. E. Whall:
Silicon-germanium heterostructures — advanced materials and devices for silicon technology (1995)
Structural and electrical properties of p+n junctions in Si by low energy Ga+ implantation (1997)
A study of the conduction mechanism of single crystal Li"0"."5Fe"2"."5O"4 through the transition points (1984)
Very high two-dimensional hole gas mobilities in strained silicon germanium (1994)
Hot hole energy relaxation in Si/Si0.8Ge0.2 two dimensional hole gases (1997)
Back gating of a two-dimensional hole gas in a SiGe quantum well (1997)
The elimination of surface cross-hatch from relaxed, limited-area Si1−xGex buffer layers (1997)
Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures (1999)
Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures (2000)
Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy (1992)
Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases (1992)
The determination of valence band discontinuities in Si/Si1−xGex/Si heterojunctions by capacitance-voltage techniques (1993)
Hole effective mass in remote doped Si/Si1−xGex quantum wells with 0.05≤x≤0.3 (1994)
Anomalous electrical properties of MnxFe3−xO4 (1987)
Concentration dependence of the Verwey transition in germanium- and fluorine-substituted magnetite (1987)
Veröffentlichungen zu Whall, T. E.
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1
Whall, T. E., Parker, E. H. C. Silicon-germanium heterostructures — advanced materials and devices for silicon technology
in: Journal of materials science , ISSN 1573-482X, Vol. 6 (5. 1995), p. 249-264
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1995
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2
Parry, C. P.., Whall, T. E.., ... Structural and electrical properties of p+n junctions in Si by low energy Ga+ implantation
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 82, No. 10 (1997), p. 4990-4993
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1997
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3
Mazen, S.A., Whall, T.E. A study of the conduction mechanism of single crystal Li"0"."5Fe"2"."5O"4 through the transition points
in: Journal of Magnetism and Magnetic Materials, in: Journal of Magnetism and Magnetic Materials . - Amsterdam : Elsevier, ISSN 0304-8853, ZDB-ID 1479000-2 Vol. 43, No. 3 (1984), p. 221-226
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1984
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4
Basaran, E.., Kubiak, R. A.., ... Very high two-dimensional hole gas mobilities in strained silicon germanium
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 64, No. 25 (1994), p. 3470-3472
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1994
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5
Braithwaite, G.., Mattey, N. L.., ... Hot hole energy relaxation in Si/Si0.8Ge0.2 two dimensional hole gases
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 81, No. 10 (1997), p. 6853-6856
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1997
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6
Emeleus, C. J.., Sadeghzadeh, M. A.., ... Back gating of a two-dimensional hole gas in a SiGe quantum well
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 70, No. 14 (1997), p. 1870-1872
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1997
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7
Hammond, R.., Phillips, P. J.., ... The elimination of surface cross-hatch from relaxed, limited-area Si1−xGex buffer layers
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 71, No. 17 (1997), p. 2517-2519
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1997
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8
Sadeghzadeh, M. A.., Parry, C. P.., ... Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 74, No. 4 (1999), p. 579-581
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1999
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9
Ansaripour, G.., Braithwaite, G.., ... Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 76, No. 9 (2000), p. 1140-1142
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2000
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10
Parry, C. P.., Kubiak, R. A.., ... Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 71, No. 1 (1992), p. 118-125
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1992
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11
Smith, D. W.., Emeleus, C. J.., ... Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 61, No. 12 (1992), p. 1453-1455
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1992
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12
Brighten, J. C.., Hawkins, I. D.., ... The determination of valence band discontinuities in Si/Si1−xGex/Si heterojunctions by capacitance-voltage techniques
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 74, No. 3 (1993), p. 1894-1899
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1993
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13
Whall, T. E.., Plews, A. D.., ... Hole effective mass in remote doped Si/Si1−xGex quantum wells with 0.05≤x≤0.3
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 65, No. 26 (1994), p. 3362-3364
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1994
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14
Brabers, V. A. M.., Proykova, Y. G.., ... Anomalous electrical properties of MnxFe3−xO4
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 61, No. 8 (1987), p. 4390-4392
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1987
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15
Barlow, R. D.., Jones, M. R. B.., ... Concentration dependence of the Verwey transition in germanium- and fluorine-substituted magnetite
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 61, No. 8 (1987), p. 3546-3548
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1987
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16
Paul, D. J.., Cleaver, J. R. A.., ... Coulomb blockade in silicon based structures at temperatures up to 50 K
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 5 (1993), p. 631-632
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1993
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17
Whall, T. E.., Plews, A. D.., ... Effective mass and band nonparabolicity in remote doped Si/Si0.8Ge0.2 quantum wells
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 66, No. 20 (1995), p. 2724-2726
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1995
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18
Loram, J.W., Ford, P.J., ... The resistivity of dilute Au Co alloys
in: Journal of Physics and Chemistry of Solids, in: Journal of Physics and Chemistry of Solids . - Amsterdam : Elsevier, ISSN 0022-3697, ZDB-ID 1491914-X Vol. 31, No. 4 (1970), p. 763-769
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1970
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19
Whall, T.E., Yeung, K.K., ... An electronic phase transition in NiFe"2O"4?
in: Journal of Magnetism and Magnetic Materials, in: Journal of Magnetism and Magnetic Materials . - Amsterdam : Elsevier, ISSN 0304-8853, ZDB-ID 1479000-2 Vol. 15-18 (1980), p. 899-900
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1980
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20
Loram, J.W., Ford, P.J., ... The resistivity of dilute Au Co alloys
in: Solid State Communications, in: Solid State Communications . - Amsterdam : Elsevier, ISSN 0038-1098, ZDB-ID 1467698-9 Vol. 7, No. 21 (1969), p. v
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1969