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Sandip Tiwari

Veröffentlichungen von Sandip Tiwari zu Tiwari, Sandip. ->
weitere Veröffentlichungen von Sandip Tiwari:
Barrier and recombination effects in the base-emitter junction of heterostructure bipolar transistors (1988)
Material properties of p-type GaAs at large dopings (1990)
Empirical fit to band discontinuities and barrier heights in III–V alloy systems (1992)
On the role of mobility and saturated velocity in the dynamic operation of p-i-n and metal-semiconductor-metal photodetectors (1992)
Response to ‘Comment on "Empirical fit to band discontinuities and barrier heights in III-V alloy systems'' ' (1992)
Experimental comparison of strained quantum-wire and quantum-well laser characteristics (1994)
Rapid thermal diffusion and ohmic contacts using zinc in GaAs and GaAlAs (1987)
Self-consistent modeling of accumulation layers and tunneling currents through very thin oxides (1996)
Surface recombination in GaAlAs/GaAs heterostructure bipolar transistors (1988)
Single charge and confinement effects in nano-crystal memories (1996)
Effects of compressive and tensile uniaxial stress on the operation of AlGaAs/GaAs quantum-well lasers (1992)
High efficiency and low threshold current strained V-groove quantum-wire lasers (1994)
A silicon nanocrystals based memory (1996)
Veröffentlichungen zu Tiwari, Sandip.
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1
Tiwari, Sandip., Frank, D. J.. Barrier and recombination effects in the base-emitter junction of heterostructure bipolar transistors
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 52, No. 12 (1988), p. 993-995
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1988
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2
Tiwari, Sandip., Wright, Steven L.. Material properties of p-type GaAs at large dopings
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 56, No. 6 (1990), p. 563-565
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1990
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3
Tiwari, Sandip., Frank, David J.. Empirical fit to band discontinuities and barrier heights in III–V alloy systems
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 60, No. 5 (1992), p. 630-632
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1992
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4
Tiwari, Sandip., Tischler, Michael A.. On the role of mobility and saturated velocity in the dynamic operation of p-i-n and metal-semiconductor-metal photodetectors
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 60, No. 9 (1992), p. 1135-1137
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1992
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5
Tiwari, Sandip., Frank, David J.. Response to ‘Comment on "Empirical fit to band discontinuities and barrier heights in III-V alloy systems'' '
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 61, No. 18 (1992), p. 2244-2244
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1992
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6
Tiwari, Sandip., Woodall, Jerry M.. Experimental comparison of strained quantum-wire and quantum-well laser characteristics
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 64, No. 17 (1994), p. 2211-2213
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1994
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7
Tiwari, Sandip., Hintzman, Jeffrey., ... Rapid thermal diffusion and ohmic contacts using zinc in GaAs and GaAlAs
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 51, No. 25 (1987), p. 2118-2120
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1987
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8
Rana, Farhan., Tiwari, Sandip., ... Self-consistent modeling of accumulation layers and tunneling currents through very thin oxides
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 69, No. 8 (1996), p. 1104-1106
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1996
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9
Tiwari, Sandip., Frank, D. J.., ... Surface recombination in GaAlAs/GaAs heterostructure bipolar transistors
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 64, No. 10 (1988), p. 5009-5012
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1988
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10
Tiwari, Sandip., Rana, Farhan., ... Single charge and confinement effects in nano-crystal memories
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 69, No. 9 (1996), p. 1232-1234
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1996
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11
Tiwari, Sandip., Bates, Richard S.., ... Effects of compressive and tensile uniaxial stress on the operation of AlGaAs/GaAs quantum-well lasers
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 60, No. 4 (1992), p. 413-415
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1992
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12
Tiwari, Sandip., Pettit, G. David., ... High efficiency and low threshold current strained V-groove quantum-wire lasers
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 64, No. 26 (1994), p. 3536-3538
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1994
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13
Tiwari, Sandip., Rana, Farhan., ... A silicon nanocrystals based memory
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 68, No. 10 (1996), p. 1377-1379
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1996