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Kenji Taniguchi

Veröffentlichungen von Kenji Taniguchi zu Taniguchi, Kenji ->
weitere Veröffentlichungen von Kenji Taniguchi:
Hot-electron-induced quasibreakdown of thin gate oxides (1997)
Theoretical model for self-interstitial generation at the Si/SiO2 interface during thermal oxidation of silicon (1989)
Stripe width dependence of oxidation-enhanced diffusion in submicron local oxidation of silicon structures (1991)
Photolytic and solvolytic reactions of .beta.-[o-(aryloxy)phenyl]vinyl bromides. Intramolecular arylation of vinyl cations into dibenzoxepins (1991)
Hot hole induced breakdown of thin silicon dioxide films (1997)
Verification of hot hole scattering rates in silicon by quantum-yield experiment (2000)
Degradation of direct-tunneling gate oxide under hot-hole injection (2000)
Carrier separation measurement of leakage current under prebreakdown in ultrathin SiO2 films (2001)
Oxide thickness dependence of interface trap generation in a metal-oxide-semiconductor structure during substrate hot-hole injection (1993)
Spatial distribution of trapped holes in SiO2 (1994)
Generation and relaxation phenomena of positive charge and interface trap in a metal-oxide-semiconductor structure (1995)
A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation (1996)
Electrical conduction properties of CuS— and CdS—polymer composites prepared by using new organosols of CuS and CdS (1986)
Contribution of arterial redox potential measurement to the care of critically ill patients (1987)
Regeneration of whole plants from protoplasts isolated from tissue-cultured shoot primordia of garlic (Allium sativum L.) (1995)
Veröffentlichungen zu Taniguchi, Kenji
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1
Umeda, Kazunori., Taniguchi, Kenji. Hot-electron-induced quasibreakdown of thin gate oxides
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 82, No. 1 (1997), p. 297-302
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1997
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2
Taniguchi, Kenji., Shibata, Yoshiaki., ... Theoretical model for self-interstitial generation at the Si/SiO2 interface during thermal oxidation of silicon
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 65, No. 7 (1989), p. 2723-2727
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1989
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3
Shibata, Yoshiaki., Taniguchi, Kenji., ... Stripe width dependence of oxidation-enhanced diffusion in submicron local oxidation of silicon structures
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 70, No. 9 (1991), p. 4846-4852
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1991
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4
Kitamura, Tsugio. Photolytic and solvolytic reactions of .beta.-[o-(aryloxy)phenyl]vinyl bromides. Intramolecular arylation of vinyl cations into dibenzoxepins
In: American Chemical Society: Journal of the American Chemical Society. - Washington, DC : American Chemical Society, ISSN 1520-5126, Vol. 113, No. 16 (1991), p. 6240-6245
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1991
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5
Tomita, Takayuki., Utsunomiya, Hiroto., ... Hot hole induced breakdown of thin silicon dioxide films
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 71, No. 25 (1997), p. 3664-3666
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1997
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6
Kamakura, Yoshinari., Kawashima, Ichiro., ... Verification of hot hole scattering rates in silicon by quantum-yield experiment
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 88, No. 10 (2000), p. 5802-5809
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2000
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7
Deguchi, Kazuaki., Ishida, Akihiro., ... Degradation of direct-tunneling gate oxide under hot-hole injection
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 77, No. 9 (2000), p. 1384-1386
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2000
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8
Uno, Shigeyasu., Ishida, Akihiro., ... Carrier separation measurement of leakage current under prebreakdown in ultrathin SiO2 films
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 89, No. 12 (2001), p. 8336-8338
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2001
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9
Khosru, Quazi Deen Mohd., Yasuda, Naoki., ... Oxide thickness dependence of interface trap generation in a metal-oxide-semiconductor structure during substrate hot-hole injection
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 18 (1993), p. 2537-2539
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1993
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10
Khosru, Quazi Deen Mohd., Yasuda, Naoki., ... Spatial distribution of trapped holes in SiO2
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 76, No. 8 (1994), p. 4738-4742
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1994
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11
Khosru, Quazi Deen Mohd., Yasuda, Naoki., ... Generation and relaxation phenomena of positive charge and interface trap in a metal-oxide-semiconductor structure
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 77, No. 9 (1995), p. 4494-4503
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1995
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12
Kunikiyo, Tatsuya., Takenaka, Masahiro., ... A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 79, No. 10 (1996), p. 7718-7725
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1996
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13
Yamamoto, Takakazu, Kubota, Etsuo, ... Electrical conduction properties of CuS— and CdS—polymer composites prepared by using new organosols of CuS and CdS
in: Journal of materials science , ISSN 1573-4811, Vol. 5 (2. 1986), p. 132-134
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1986
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14
Taniguchi, Shogo, Kodama, Kenji, ... Contribution of arterial redox potential measurement to the care of critically ill patients
in: Journal of anesthesia , ISSN 1438-8359, Vol. 1 (2. 1987), p. 125-131
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1987
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15
Ayabe, Masanori, Taniguchi, Kenji, ... Regeneration of whole plants from protoplasts isolated from tissue-cultured shoot primordia of garlic (Allium sativum L.)
in: Plant cell reports , ISSN 1432-203X, Vol. 15 (1/2. 1995), p. 17-21
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1995
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16
Miyado, Kenji, Sato, Masahiro, ... Transformation-related expression of a low-molecular-mass tropomyosin isoform TM5/TM30nm in transformed rat fibroblastic cell lines
in: Journal of cancer research and clinical oncology , ISSN 1432-1335, Vol. 123 (6. 1997), p. 331-336
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1997
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17
Miyado, Kenji, Sato, Masahiro, ... Transformation-related expression of a low-molecular-mass tropomyosin isoform TM5/TM30nm in transformed rat fibroblastic cell lines
in: Journal of cancer research and clinical oncology , ISSN 1432-1335, Vol. 123 (6. 1997), p. 331-336
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1997
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18
Xia, Jianxin., Saito, Tomoya., ... Boron segregation to extended defects induced by self-ion implantation into silicon
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 85, No. 11 (1999), p. 7597-7603
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1999
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19
Kim, Ryangsu., Furuta, Yoshikazu., ... Anomalous phosphorus diffusion in Si during post-implantation annealing
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 78, No. 24 (2001), p. 3818-3820
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2001
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20
Matsuoka, Toshimasa., Taguchi, Shigenari., ... Degradation of inversion layer electron mobility due to interface traps in metal-oxide-semiconductor transistors
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 78, No. 5 (1995), p. 3252-3257
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1995