Anmelden/Registrieren
Erscheinungsjahr:
 
Zurück zur geteilten Ansicht
T. F. Kuech

Veröffentlichungen von T. F. Kuech zu Sun, Jingxi. ->
weitere Veröffentlichungen von T. F. Kuech:
Perspectives on metal-organic vapor phase epitaxy growth: chemistry, structures and systems (1992)
The use of chloride based precursors in metalorganic vapor phase epitaxy (1991)
Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy (1998)
High temperature adduct formation of trimethylgallium and ammonia (1996)
A near-field scanning optical microscopy study of the uniformity of GaAs surface passivation (1996)
Multiple deep levels in metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporation (1994)
Mechanism of carbon incorporation in MOCVD GaAs (1984)
Characterization of silicon implanted GaAs buffer layers grown by metalorganic chemical vapor deposition (1985)
Oxygen-based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide (1995)
Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metalorganic vapor phase epitaxy (2001)
Improved detection of carbon in GaAs by secondary ion mass spectroscopy: The influence of hydrocarbons in metalorganic vapor phase epitaxy (1988)
Changing photoluminescence intensity from GaAs/Al0.3Ga0.7As heterostructures upon chemisorption of SO2 (1995)
Growth behavior of (C"2H"5)"2GaCl and AsH"3 based GaAs: low reactor pressure and temperatures (1992)
The influence of hydrocarbons in MOVPE GaAs growth: Improved detection of carbon by secondary ion mass spectroscopy (1988)
Oxygen-related defects in low phosphorous content GaAs1−yPy grown by metal organic vapor phase epitaxy (1997)
Veröffentlichungen zu Sun, Jingxi.
Zurück zur geteilten Ansicht
Verfasser Titel Jahr absteigend sortierenaufsteigend sortieren
zeige Details
1
Sun, Jingxi p-GaN surface treatments for metal contacts
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 76, No. 4 (2000), p. 415-417
Zugang: zum Volltext
ähnliche Vorschläge
2000
zeige Details
2
Gu, Shulin., Zhang, Rong., ... Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 76, No. 23 (2000), p. 3454-3456
Zugang: zum Volltext
ähnliche Vorschläge
2000
zeige Details
3
Sun, Jingxi., Seo, Dong Ju., ... Chemical bonding and electronic properties of SeS2-treated GaAs(100)
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 85, No. 2 (1999), p. 969-977
Zugang: zum Volltext
ähnliche Vorschläge
1999