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J. S. Speck

Veröffentlichungen von J. S. Speck zu Speck, J. S.. ->
weitere Veröffentlichungen von J. S. Speck:
Thermodynamic calculations of the graphitization of carbon blacks (1990)
T2’-Blood-Oxygen-Level-Dependent-Magnetresonanz-Bildgebung beim akuten Schlaganfall - eine Pilotstudie (2007)
Redox and mixed-valence chemistry of the clusters M4(CO)11(.mu.4-PR)2 with M = iron and/or ruthenium and of their derivatives (1988)
Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. I. Theory (1994)
Modeling cross-hatch surface morphology in growing mismatched layers (2002)
Pulsed laser deposition of oriented In2O3 on (001) InAs, MgO, and yttria-stabilized zirconia (1993)
Structure and intercalation of thin benzene derived carbon fibers (1989)
Growth of InAs on diamond (001) by molecular beam epitaxy (1992)
Pulsed laser deposition of epitaxial silicon/h-Pr2O3/silicon heterostructures (1993)
Mosaic structure in epitaxial thin films having large lattice mismatch (1997)
Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire (1998)
Erratum: "Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire" [Appl. Phys. Lett. 73, 3090 (1998)] (1999)
Lateral ordering of quantum dots by periodic subsurface stressors (1999)
Development of cross-hatch morphology during growth of lattice mismatched layers (2000)
Elastic energy release due to domain formation in the strained epitaxy of ferroelectric and ferroelastic films (1993)
Veröffentlichungen zu Speck, J. S..
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1
Speck, J. S. Thermodynamic calculations of the graphitization of carbon blacks
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 67, No. 1 (1990), p. 495-500
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1990
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2
Fiehler, J. T2’-Blood-Oxygen-Level-Dependent-Magnetresonanz-Bildgebung beim akuten Schlaganfall - eine Pilotstudie
In: RöFo. - Stuttgart [u.a.] : Thieme Vol. 179, No. 01 (1. 2007), p. 17-20
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2007
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3
Jaeger, J. Tilman. Redox and mixed-valence chemistry of the clusters M4(CO)11(.mu.4-PR)2 with M = iron and/or ruthenium and of their derivatives
In: Organometallics. - Washington, DC : ACS Publ., ISSN 1520-6041, Vol. 7, No. 8 (1988), p. 1753-1760
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1988
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4
Speck, J. S.., Pompe, W.. Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. I. Theory
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 76, No. 1 (1994), p. 466-476
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1994
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5
Andrews, A. M.., Speck, J. S.. Modeling cross-hatch surface morphology in growing mismatched layers
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 91, No. 4 (2002), p. 1933-1943
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2002
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6
Tarsa, E. J.., English, J. H.., ... Pulsed laser deposition of oriented In2O3 on (001) InAs, MgO, and yttria-stabilized zirconia
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 62, No. 19 (1993), p. 2332-2334
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1993
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7
Speck, J.S., Endo, M., ... Structure and intercalation of thin benzene derived carbon fibers
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 94, No. 4 (1989), p. 834-848
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1989
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8
Williams, K. E.., Tarsa, E. J.., ... Growth of InAs on diamond (001) by molecular beam epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 61, No. 4 (1992), p. 405-407
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1992
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9
Tarsa, E. J.., Speck, J. S.., ... Pulsed laser deposition of epitaxial silicon/h-Pr2O3/silicon heterostructures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 4 (1993), p. 539-541
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1993
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10
Srikant, V.., Speck, J. S.., ... Mosaic structure in epitaxial thin films having large lattice mismatch
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 82, No. 9 (1997), p. 4286-4295
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1997
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11
Golan, Y.., Wu, X. H.., ... Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 73, No. 21 (1998), p. 3090-3092
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1998
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12
Golan, Y.., Wu, X. H.., ... Erratum: "Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire" [Appl. Phys. Lett. 73, 3090 (1998)]
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 74, No. 10 (1999), p. 1498-1498
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1999
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13
Romanov, A. E.., Petroff, P. M.., ... Lateral ordering of quantum dots by periodic subsurface stressors
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 74, No. 16 (1999), p. 2280-2282
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1999
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14
Andrews, A. M.., Romanov, A. E.., ... Development of cross-hatch morphology during growth of lattice mismatched layers
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 77, No. 23 (2000), p. 3740-3742
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2000
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15
Pompe, W.., Gong, X.., ... Elastic energy release due to domain formation in the strained epitaxy of ferroelectric and ferroelastic films
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 74, No. 10 (1993), p. 6012-6019
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1993
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16
Speck, J. S.., Seifert, A.., ... Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. II. Experimental verification and implications
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 76, No. 1 (1994), p. 477-483
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1994
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17
Romanov, A. E.., Pompe, W.., ... Theory of microstructure and mechanics of the ...a1/a2/a1/a2... domain pattern in epitaxial ferroelectric and ferroelastic films
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 79, No. 8 (1996), p. 4037-4049
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1996
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18
Tarsa, E. J.., Wu, X. H.., ... Growth of epitaxial MgO films on Sb-passivated (001)GaAs: Properties of the MgO/GaAs interface
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 66, No. 26 (1995), p. 3588-3590
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1995
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19
Keller, S.., Parish, G.., ... Dislocation reduction in GaN films through selective island growth of InGaN
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 77, No. 17 (2000), p. 2665-2667
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2000
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20
Hansen, M.., Chen, L. F.., ... Mg-rich precipitates in the p-type doping of InGaN-based laser diodes
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 80, No. 14 (2002), p. 2469-2471
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2002