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Hideki Hayashi

Veröffentlichungen von Hideki Hayashi zu Shiga, Nobuo. ->
weitere Veröffentlichungen von Hideki Hayashi:
A Novel Oxidation Reaction of Organodisilanes with Perbenzoic Acid (1965)
Chemistry of organosilicon compounds. 191. Acetalization of carbonyl compounds with alkoxysilanes catalyzed by iodotrimethylsilane. One-pot allylation reactions of carbonyl compounds to homoallyl ethers using an allylsilane (1984)
GaAs traveling-wave directional coupler optical modulator/switch (1990)
π-Conjugated soluble and fluorescent poly(thiophene-2,5-diyl)s with phenolic, hindered phenolic and p-C6H4OCH3 substituents. Preparation, optical properties, and redox reaction (1997)
Costs and benefits for water strider (Aquarius paludum) females of carrying guarding, reproductive males (1998)
Preparation and properties of π-conjugated poly(benzimidazole-4,7-diyl)s (1998)
Fractal properties of polymer crystals (1989)
(InAs)3(GaAs)1 superlattice channel field-effect transistor grown by molecular beam epitaxy (1989)
Electronic properties of a pulse-doped GaAs structure grown by organometallic vapor phase epitaxy (1990)
Thermally stable Pd/Ge ohmic contacts to n-type GaAs (1991)
High electron mobility in modulation-doped n-AlInAs/InP heterostructures grown by low pressure organometallic vapor phase epitaxy (1991)
Synthesis of polyamides containing α-diketone moieties and 2,3-quinoxalinediyl units in the main chain (1985)
Effect of organic solvents on enantioselectivity of protease catalysis (1997)
Determination of impurities in strontium titanate ceramics by inductively coupled plasma mass spectrometry (1995)
Effects of water content on the enantioselectivity of α-chymotrypsin catalysis in organic media (1995)
Veröffentlichungen zu Shiga, Nobuo.
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Nakajima, Shigeru., Kuwata, Nobuhiro., ... Electronic properties of a pulse-doped GaAs structure grown by organometallic vapor phase epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 57, No. 13 (1990), p. 1316-1317
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1990
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2
Nakajima, Shigeru., Murata, Michio., ... High electron mobility in modulation-doped n-AlInAs/InP heterostructures grown by low pressure organometallic vapor phase epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 13 (1991), p. 1606-1607
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1991