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Dong Ju Jeon

Veröffentlichungen von Dong Ju Jeon zu Seo, Dong Ju. ->
weitere Veröffentlichungen von Dong Ju Jeon:
A Convenient Synthesis of 2-Alkyl-2-methyltetrahydrofurans from 4-Methylalk-4-en-1-ols Catalyzed by Iodine (1998)
A Convenient Synthesis of 2-Alkyl-2-methyltetrahydrofurans from 4-Methylalk-4-en-1-ols Catalyzed by Iodine (1998)
New Synthesis of 2-Alkyl-4,4-dimethyl-5-halomethylisoxazolidin-3-ones via Intramolecular Halocyclization of N-Alkyl-2,2-dimethyl-3-butenohydroxamic Acids (1998)
New Synthesis of 2-Alkyl-4,4-dimethyl-5-halomethylisoxazolidin-3-ones via Intramolecular Halocyclization of N-Alkyl-2,2-dimethyl-3-butenohydroxamic Acids (1998)
Diastereoselective Synthesis of 2-Cyanomethyl-3-hydroxy-5-iodomethyltetrahydrofuran from Isoxazolines by Iodoetheration (2002)
Diastereoselective Synthesis of 2-Cyanomethyl-3-hydroxy-5-iodomethyltetrahydrofuran from Isoxazolines by Iodoetheration (2002)
Veröffentlichungen zu Seo, Dong Ju.
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1
Kim, Hyoung Cheul. Diastereoselective Synthesis of 2-Cyanomethyl-3-hydroxy-5-iodomethyltetrahydrofuran from Isoxazolines by Iodoetheration
In: Synlett. - Stuttgart [u.a.] : Thieme Vol. 2002, No. 10 (10. 2002), p. 1691-1693
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2002
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2
Kim, Hyoung Cheul., Woo, Seung Woo., ... Diastereoselective Synthesis of 2-Cyanomethyl-3-hydroxy-5-iodomethyltetrahydrofuran from Isoxazolines by Iodoetheration
in: Synlett. - Stuttgart [u.a.] : Thieme, ISSN 1437-2096, Vol. 2002, No. 10 (2002), p. 1691-1693
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2002
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3
Sun, Jingxi., Seo, Dong Ju., ... Chemical bonding and electronic properties of SeS2-treated GaAs(100)
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 85, No. 2 (1999), p. 969-977
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1999
SeS2-passivated n-type GaAs (100) surfaces, formed by treatment of GaAs in SeS2:CS2 solution at room temperature, were studied with high-resolution core-level photoemission spectroscopy excited with synchrotron radiation source. The SeS2-treated surface consists of a chemically stratified... mehr
beteiligte Personen: Sun, Jingxi. , Seo, Dong Ju. , O'Brien, W. L.. , Himpsel, F. J.. , Ellis, A. B.. , Kuech, T. F..
Erschienen: 1999.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.369217
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4
Kim, Kun Ho., Lee, Jeoung Ju., ... Growth of epitaxial C54 TiSi2 on Si(111) substrate by in situ annealing in ultrahigh vacuum
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 71, No. 8 (1992), p. 3812-3815
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1992