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P. Pirouz

Veröffentlichungen von P. Pirouz zu Pirouz, Pirouz. ->
weitere Veröffentlichungen von P. Pirouz:
Thin-crystal approximations in structure imaging (1981)
Formation of planar defects in the epitaxial growth of GaP on Si substrate by metal organic chemical-vapor deposition (1988)
A high-resolution electron microscopy study of vanadium deposited on the basal plane of sapphire (1993)
Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias (2002)
Precipitation of oxygen at 485 °C: Direct evidence for accelerated diffusion of oxygen in silicon? (1985)
Polytypic transformations in SiC: the role of TEM (1993)
Doping effects on indentation plasticity and fracture in germanium (1985)
Atomic and Electronic Structure of V/MgO Interface (1997)
Growth of SiC using hexamethyldisilane in a hydrogen-poor ambient (1994)
Growth defects in GaN films on 6H–SiC substrates (1996)
Structural characterization of nanometer SiC films grown on Si (1993)
Growth of improved quality 3C-SiC films on 6H-SiC substrates (1990)
Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers (1990)
Application of oxidation to the structural characterization of SiC epitaxial films (1991)
Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers (1991)
Veröffentlichungen zu Pirouz, Pirouz.
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1
Pirouz, P.. Thin-crystal approximations in structure imaging
in: Acta crystallographica. - [S.l.] : IUCR, ISSN 1600-5724, Vol. 37, No. 4 (1981), p. 465-471
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1981
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2
Ernst, F.., Pirouz, P.. Formation of planar defects in the epitaxial growth of GaP on Si substrate by metal organic chemical-vapor deposition
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 64, No. 9 (1988), p. 4526-4530
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1988
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3
Ikuhara, Y., Pirouz, P. A high-resolution electron microscopy study of vanadium deposited on the basal plane of sapphire
in: Ultramicroscopy, in: Ultramicroscopy . - Amsterdam : Elsevier, ISSN 0304-3991, ZDB-ID 1479043-9 Vol. 52, No. 3-4 (1993), p. 421-428
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1993
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4
Galeckas, A.., Linnros, J.., ... Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 81, No. 5 (2002), p. 883-885
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2002
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5
Bergholz, W.., Hutchison, J. L.., ... Precipitation of oxygen at 485 °C: Direct evidence for accelerated diffusion of oxygen in silicon?
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 58, No. 9 (1985), p. 3419-3424
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1985
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6
Pirouz, P., Yang, J.W. Polytypic transformations in SiC: the role of TEM
in: Ultramicroscopy, in: Ultramicroscopy . - Amsterdam : Elsevier, ISSN 0304-3991, ZDB-ID 1479043-9 Vol. 51, No. 1-4 (1993), p. 189-214
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1993
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7
Dickson, J. M.. Aromatic hydrocarbon-water separations by a pressure-driven membrane separation process
In: Industrial and engineering chemistry. - Washington, DC, Vol. 22, No. 4 (1983), p. 625-632
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1983
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8
Li, Zhidan., Wang, Long., ... Orientation relationship between chemical vapor deposited diamond and graphite substrates
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 73, No. 2 (1993), p. 711-715
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1993
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9
Argoitia, Alberto., Angus, John C.., ... Diamond grown on single-crystal beryllium oxide
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 73, No. 9 (1993), p. 4305-4312
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1993
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10
Wang, Long., Pirouz, Pirouz., ... Heteroepitaxially grown diamond on a c-BN {111} surface
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 10 (1993), p. 1336-1338
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1993
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11
Roberts, S. G., Pirouz, P., ... Doping effects on indentation plasticity and fracture in germanium
in: Journal of materials science , ISSN 1573-4803, Vol. 20 (5. 1985), p. 1739-1747
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1985
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12
Ikuhara, Y., Sugawara, Y., ... Atomic and Electronic Structure of V/MgO Interface
in: Interface science , ISSN 1573-2746, Vol. 5 (1. 1997), p. 5-16
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1997
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13
Zorman, Christian A.., Fleischman, Aaron J.., ... Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 78, No. 8 (1995), p. 5136-5138
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1995
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14
Nordell, N.., Nishino, S.., ... Growth of SiC using hexamethyldisilane in a hydrogen-poor ambient
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 64, No. 13 (1994), p. 1647-1649
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1994
Growth of cubic SiC has been carried out on Si(111), Si(100), and SiC(0001) substrates using chemical vapor deposition at atmospheric pressure. Hexamethyldisilane (HMDS) was used as the only precursor and pure Ar or a nonflammable mixture of Ar and H2 was used as the carrier gas. The... mehr
beteiligte Personen: Nordell, N.. , Nishino, S.. , Yang, J.-W.. , Jacob, C.. , Pirouz, P..
Erschienen: 1994.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.111819
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15
Chien, F. R.., Ning, X. J.., ... Growth defects in GaN films on 6H–SiC substrates
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 68, No. 19 (1996), p. 2678-2680
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1996
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16
Li, J. P.., Steckl, A. J.., ... Structural characterization of nanometer SiC films grown on Si
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 62, No. 24 (1993), p. 3135-3137
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1993
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17
Powell, J. A.., Larkin, D. J.., ... Growth of improved quality 3C-SiC films on 6H-SiC substrates
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 56, No. 14 (1990), p. 1353-1355
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1990
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18
Powell, J. A.., Larkin, D. J.., ... Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 56, No. 15 (1990), p. 1442-1444
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1990
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19
Powell, J. A.., Petit, J. B.., ... Application of oxidation to the structural characterization of SiC epitaxial films
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 2 (1991), p. 183-185
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1991
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20
Powell, J. A.., Petit, J. B.., ... Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 3 (1991), p. 333-335
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1991