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P. Pirouz

Veröffentlichungen von P. Pirouz zu Pirouz, Pirouz. ->
weitere Veröffentlichungen von P. Pirouz:
Thin-crystal approximations in structure imaging (1981)
Formation of planar defects in the epitaxial growth of GaP on Si substrate by metal organic chemical-vapor deposition (1988)
A high-resolution electron microscopy study of vanadium deposited on the basal plane of sapphire (1993)
Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias (2002)
Precipitation of oxygen at 485 °C: Direct evidence for accelerated diffusion of oxygen in silicon? (1985)
Polytypic transformations in SiC: the role of TEM (1993)
Doping effects on indentation plasticity and fracture in germanium (1985)
Atomic and Electronic Structure of V/MgO Interface (1997)
Growth of SiC using hexamethyldisilane in a hydrogen-poor ambient (1994)
Growth defects in GaN films on 6H–SiC substrates (1996)
Structural characterization of nanometer SiC films grown on Si (1993)
Growth of improved quality 3C-SiC films on 6H-SiC substrates (1990)
Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers (1990)
Application of oxidation to the structural characterization of SiC epitaxial films (1991)
Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers (1991)
Veröffentlichungen zu Pirouz, Pirouz.
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1
Pirouz, P.. Thin-crystal approximations in structure imaging
in: Acta crystallographica. - [S.l.] : IUCR, ISSN 1600-5724, Vol. 37, No. 4 (1981), p. 465-471
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1981
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2
Ernst, F.., Pirouz, P.. Formation of planar defects in the epitaxial growth of GaP on Si substrate by metal organic chemical-vapor deposition
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 64, No. 9 (1988), p. 4526-4530
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1988
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3
Ikuhara, Y., Pirouz, P. A high-resolution electron microscopy study of vanadium deposited on the basal plane of sapphire
in: Ultramicroscopy, in: Ultramicroscopy . - Amsterdam : Elsevier, ISSN 0304-3991, ZDB-ID 1479043-9 Vol. 52, No. 3-4 (1993), p. 421-428
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1993
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4
Galeckas, A.., Linnros, J.., ... Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 81, No. 5 (2002), p. 883-885
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2002
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5
Bergholz, W.., Hutchison, J. L.., ... Precipitation of oxygen at 485 °C: Direct evidence for accelerated diffusion of oxygen in silicon?
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 58, No. 9 (1985), p. 3419-3424
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1985
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6
Pirouz, P., Yang, J.W. Polytypic transformations in SiC: the role of TEM
in: Ultramicroscopy, in: Ultramicroscopy . - Amsterdam : Elsevier, ISSN 0304-3991, ZDB-ID 1479043-9 Vol. 51, No. 1-4 (1993), p. 189-214
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1993
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7
Dickson, J. M.. Aromatic hydrocarbon-water separations by a pressure-driven membrane separation process
In: Industrial and engineering chemistry. - Washington, DC, Vol. 22, No. 4 (1983), p. 625-632
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1983
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8
Li, Zhidan., Wang, Long., ... Orientation relationship between chemical vapor deposited diamond and graphite substrates
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 73, No. 2 (1993), p. 711-715
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1993
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9
Argoitia, Alberto., Angus, John C.., ... Diamond grown on single-crystal beryllium oxide
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 73, No. 9 (1993), p. 4305-4312
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1993
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10
Wang, Long., Pirouz, Pirouz., ... Heteroepitaxially grown diamond on a c-BN {111} surface
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 10 (1993), p. 1336-1338
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1993
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11
Roberts, S. G., Pirouz, P., ... Doping effects on indentation plasticity and fracture in germanium
in: Journal of materials science , ISSN 1573-4803, Vol. 20 (5. 1985), p. 1739-1747
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1985
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12
Ikuhara, Y., Sugawara, Y., ... Atomic and Electronic Structure of V/MgO Interface
in: Interface science , ISSN 1573-2746, Vol. 5 (1. 1997), p. 5-16
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1997
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13
Zorman, Christian A.., Fleischman, Aaron J.., ... Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 78, No. 8 (1995), p. 5136-5138
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1995
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14
Nordell, N.., Nishino, S.., ... Growth of SiC using hexamethyldisilane in a hydrogen-poor ambient
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 64, No. 13 (1994), p. 1647-1649
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1994
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15
Chien, F. R.., Ning, X. J.., ... Growth defects in GaN films on 6H–SiC substrates
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 68, No. 19 (1996), p. 2678-2680
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1996
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16
Li, J. P.., Steckl, A. J.., ... Structural characterization of nanometer SiC films grown on Si
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 62, No. 24 (1993), p. 3135-3137
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1993
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17
Powell, J. A.., Larkin, D. J.., ... Growth of improved quality 3C-SiC films on 6H-SiC substrates
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 56, No. 14 (1990), p. 1353-1355
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1990
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18
Powell, J. A.., Larkin, D. J.., ... Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 56, No. 15 (1990), p. 1442-1444
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1990
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19
Powell, J. A.., Petit, J. B.., ... Application of oxidation to the structural characterization of SiC epitaxial films
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 2 (1991), p. 183-185
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1991
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20
Powell, J. A.., Petit, J. B.., ... Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 3 (1991), p. 333-335
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1991