Anmelden/Registrieren
Erscheinungsjahr:
 
Zurück zur geteilten Ansicht
Hyung-Ho Park

Veröffentlichungen von Hyung-Ho Park zu Park, Hyung-Ho. ->
weitere Veröffentlichungen von Hyung-Ho Park:
Effect of PrBa2Cu3O7−x buffer layer thickness on the properties of YBa2Cu3O7−x thin films grown on sapphire by laser ablation (1996)
Leakage current and dielectric breakdown behavior in annealed SiO2 aerogel films (1998)
Interface-controlled Au/GaAs Schottky contact with surface sulfidation and interfacial hydrogenation (2001)
Interface-controlled gate of GaAs metal–semiconductor field-effect transistor (2002)
New ternary fluoride with K2NiF4-type structure in CsF-CaF2 system: Cs2CaF4 (1996)
Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatment (1993)
Interfacial reaction in the sputter-deposited SiO2/Ti0.1W0.9 antifuse system (1995)
Solid state amorphization in Ni-Zr multilayers studied by differential scanning calorimetry (1993)
Characterization and removal of silicon surface residue resulting from CHF3/C2F6 reactive ion etching (1994)
Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film (1994)
Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film (1994)
SiO2 aerogel film as a novel intermetal dielectric (1997)
In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate (1993)
Veröffentlichungen zu Park, Hyung-Ho.
Zurück zur geteilten Ansicht
Verfasser Titel Jahr absteigend sortierenaufsteigend sortieren
zeige Details
1
Lee, Sang Yeol, Park, Hyung-Ho Effect of PrBa2Cu3O7−x buffer layer thickness on the properties of YBa2Cu3O7−x thin films grown on sapphire by laser ablation
in: Journal of superconductivity , ISSN 1572-9605, Vol. 9 (5. 1996), p. 545-549
Zugang: zum Volltext
ähnliche Vorschläge
1996
zeige Details
2
Jo, Moon-Ho., Park, Hyung-Ho. Leakage current and dielectric breakdown behavior in annealed SiO2 aerogel films
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 72, No. 11 (1998), p. 1391-1393
Zugang: zum Volltext
ähnliche Vorschläge
1998
zeige Details
3
Kang, Min-Gu., Park, Hyung-Ho. Interface-controlled Au/GaAs Schottky contact with surface sulfidation and interfacial hydrogenation
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 89, No. 9 (2001), p. 5204-5208
Zugang: zum Volltext
ähnliche Vorschläge
2001
zeige Details
4
Kang, Min-Gu., Park, Hyung-Ho. Interface-controlled gate of GaAs metal–semiconductor field-effect transistor
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 80, No. 14 (2002), p. 2499-2501
Zugang: zum Volltext
ähnliche Vorschläge
2002
zeige Details
5
Jo, Moon-Ho, Park, Hyung-Ho, ... New ternary fluoride with K2NiF4-type structure in CsF-CaF2 system: Cs2CaF4
in: Journal of materials science , ISSN 1573-4811, Vol. 15 (15. 1996), p. 1294-1296
Zugang: zum Volltext
ähnliche Vorschläge
1996
zeige Details
6
Lee, Jong-Lam., Kim, Dojin., ... Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatment
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 73, No. 7 (1993), p. 3539-3542
Zugang: zum Volltext
ähnliche Vorschläge
1993
zeige Details
7
Baek, Jong Tae., Park, Hyung-Ho., ... Interfacial reaction in the sputter-deposited SiO2/Ti0.1W0.9 antifuse system
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 78, No. 12 (1995), p. 7074-7079
Zugang: zum Volltext
ähnliche Vorschläge
1995
The effects of annealing temperature on the interfacial reactions and the antifuse I-V characteristics of ultra thin SiO2 layer deposited on Ti0.1W0.9 substrate were investigated. The interfacial reactions were analyzed using x-ray photoelectron spectroscopy and Auger electron spectroscopy with... mehr
beteiligte Personen: Baek, Jong Tae. , Park, Hyung-Ho. , Cho, Kyung-Ik. , Yoo, Hyung Joun. , Kang, Sang Won. , Ahn, Byung Tae.
Erschienen: 1995.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.360413
zeige Details
8
Lee, Sung-Man, Yun, Dong-Sig, ... Solid state amorphization in Ni-Zr multilayers studied by differential scanning calorimetry
in: Journal of materials science , ISSN 1573-4811, Vol. 12 (10. 1993), p. 770-772
Zugang: zum Volltext
ähnliche Vorschläge
1993
zeige Details
9
Park, Hyung-Ho., Kwon, Kwang-Ho., ... Characterization and removal of silicon surface residue resulting from CHF3/C2F6 reactive ion etching
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 76, No. 8 (1994), p. 4596-4602
Zugang: zum Volltext
ähnliche Vorschläge
1994
zeige Details
10
Moon, Hwan Seong, Lee, Jae Suk, ... Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film
in: Journal of materials science , ISSN 1573-4803, Vol. 29 (6. 1994), p. 1545-1548
Zugang: zum Volltext
ähnliche Vorschläge
1994
zeige Details
11
Moon, Hwan Seong, Lee, Jae Suk, ... Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film
in: Journal of materials science , ISSN 1573-4803, Vol. 29 (12. 1994), p. 3372-3375
Zugang: zum Volltext
ähnliche Vorschläge
1994
zeige Details
12
Jo, Moon-Ho., Park, Hyung-Ho., ... SiO2 aerogel film as a novel intermetal dielectric
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 82, No. 3 (1997), p. 1299-1304
Zugang: zum Volltext
ähnliche Vorschläge
1997
zeige Details
13
Choi, Chi Kyu., Yang, Soo Jeong., ... In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 4 (1993), p. 485-487
Zugang: zum Volltext
ähnliche Vorschläge
1993