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Hyung-Ho Park

Veröffentlichungen von Hyung-Ho Park zu Park, Hyung-Ho. ->
weitere Veröffentlichungen von Hyung-Ho Park:
Effect of PrBa2Cu3O7−x buffer layer thickness on the properties of YBa2Cu3O7−x thin films grown on sapphire by laser ablation (1996)
Leakage current and dielectric breakdown behavior in annealed SiO2 aerogel films (1998)
Interface-controlled Au/GaAs Schottky contact with surface sulfidation and interfacial hydrogenation (2001)
Interface-controlled gate of GaAs metal–semiconductor field-effect transistor (2002)
New ternary fluoride with K2NiF4-type structure in CsF-CaF2 system: Cs2CaF4 (1996)
Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatment (1993)
Interfacial reaction in the sputter-deposited SiO2/Ti0.1W0.9 antifuse system (1995)
Solid state amorphization in Ni-Zr multilayers studied by differential scanning calorimetry (1993)
Characterization and removal of silicon surface residue resulting from CHF3/C2F6 reactive ion etching (1994)
Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film (1994)
Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film (1994)
SiO2 aerogel film as a novel intermetal dielectric (1997)
In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate (1993)
Veröffentlichungen zu Park, Hyung-Ho.
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1 		Lee, Sang Yeol, Park, Hyung-Ho Effect of PrBa2Cu3O7−x buffer layer thickness on the properties of YBa2Cu3O7−x thin films grown on sapphire by laser ablation
in: Journal of superconductivity , ISSN 1572-9605, Vol. 9 (5. 1996), p. 545-549
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ähnliche Vorschläge 		1996
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2 		Jo, Moon-Ho., Park, Hyung-Ho. Leakage current and dielectric breakdown behavior in annealed SiO2 aerogel films
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 72, No. 11 (1998), p. 1391-1393
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ähnliche Vorschläge 		1998
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3 		Kang, Min-Gu., Park, Hyung-Ho. Interface-controlled Au/GaAs Schottky contact with surface sulfidation and interfacial hydrogenation
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 89, No. 9 (2001), p. 5204-5208
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ähnliche Vorschläge 		2001
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4 		Kang, Min-Gu., Park, Hyung-Ho. Interface-controlled gate of GaAs metal–semiconductor field-effect transistor
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 80, No. 14 (2002), p. 2499-2501
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ähnliche Vorschläge 		2002
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5 		Jo, Moon-Ho, Park, Hyung-Ho, ... New ternary fluoride with K2NiF4-type structure in CsF-CaF2 system: Cs2CaF4
in: Journal of materials science , ISSN 1573-4811, Vol. 15 (15. 1996), p. 1294-1296
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ähnliche Vorschläge 		1996
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6 		Lee, Jong-Lam., Kim, Dojin., ... Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatment
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 73, No. 7 (1993), p. 3539-3542
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ähnliche Vorschläge 		1993
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7 		Baek, Jong Tae., Park, Hyung-Ho., ... Interfacial reaction in the sputter-deposited SiO2/Ti0.1W0.9 antifuse system
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 78, No. 12 (1995), p. 7074-7079
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ähnliche Vorschläge 		1995
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8 		Lee, Sung-Man, Yun, Dong-Sig, ... Solid state amorphization in Ni-Zr multilayers studied by differential scanning calorimetry
in: Journal of materials science , ISSN 1573-4811, Vol. 12 (10. 1993), p. 770-772
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ähnliche Vorschläge 		1993
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9 		Park, Hyung-Ho., Kwon, Kwang-Ho., ... Characterization and removal of silicon surface residue resulting from CHF3/C2F6 reactive ion etching
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 76, No. 8 (1994), p. 4596-4602
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ähnliche Vorschläge 		1994
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10 		Moon, Hwan Seong, Lee, Jae Suk, ... Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film
in: Journal of materials science , ISSN 1573-4803, Vol. 29 (6. 1994), p. 1545-1548
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ähnliche Vorschläge 		1994
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11 		Moon, Hwan Seong, Lee, Jae Suk, ... Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film
in: Journal of materials science , ISSN 1573-4803, Vol. 29 (12. 1994), p. 3372-3375
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ähnliche Vorschläge 		1994
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12 		Jo, Moon-Ho., Park, Hyung-Ho., ... SiO2 aerogel film as a novel intermetal dielectric
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 82, No. 3 (1997), p. 1299-1304
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ähnliche Vorschläge 		1997
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13 		Choi, Chi Kyu., Yang, Soo Jeong., ... In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 63, No. 4 (1993), p. 485-487
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ähnliche Vorschläge 		1993