Zusammenfassung Die Verteilung der Ladungsträgerkonzentration, des elektrischen Feldes und des elektrostatischen Potentials für den stationären Zustand von raumladungsbegrenzten Strömen in drei verschiedenen Medien wird berechnet und graphisch wiedergegeben für Strukturen von ebener,... mehr

Copyright: Copyright 1967 Birkhäuser-Verlag mehr

The strain in a porous Si layer formed by anodization of a crystalline p+-Si(100) wafer in a HF electrolyte was measured by double-crystal x-ray diffractometry. The perpendicular strain in the as-formed porous Si layer is ∼10−3. The parallel strain is not measurable (<10−4). Upon annealing... mehr

The perpendicular x-ray strain of epitaxial CoSi2 films grown on Si(111) substrates at ∼600 °C was measured at temperatures from 24 up to 650 °C. At 600 °C, the perpendicular x-ray strain is −0.86%, which is about the x-ray strain that a stress-free CoSi2 film on Si(111) would have at that... mehr

We used 2 MeV 4He backscattering spectrometry, x-ray diffractometry, and the van der Pauw technique to study how epitaxial ReSi2 films on Si(100) change structurally and electrically upon room-temperature implantation of 300 keV 28Si or 380 keV 40Ar. The as-grown film has a minimum channeling... mehr

Reactive deposition epitaxy was used to synthesize thin layers of RexMo1−xSi2 on Si(100). In the case of x=1, ReSi2 layers of excellent crystalline quality have been reported previously [J. E. Mahan, K. M. Geib, G. Y. Robinson, R. G. Long, Y. Xinghua, G. Bai, and M.-A. Nicolet, Appl. Phys.... mehr

Summary 1. We analyzed the mode of attachment of 16 S tailed acetylcholinesterase (AChE; EC 3.1.1.7) to rat superior cervical ganglion (SCG) neuronal membranes. Using extractions by high-salt (HS) and nonionic detergent (Triton X-100), we found two pools of 16 S AChE. 2. The detergent-extracted... mehr

Copyright: Copyright 1991 Plenum Publishing Corporation mehr

ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2 (100)/Si(001) with ReSi2 [010](parallel)Si〈110〉. The lattice matching consists of a common unit mesh of 120... mehr

The structural and electrical characteristics of 300 keV Si+ or 380 keV Ar+ ion-implanted epitaxial ReSi2 films grown on an n-Si(100) substrate have been studied by using 2 MeV 4He+ ion backscattering spectrometry, x-ray diffraction, high-resolution transmission electron microscopy, and... mehr