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M. R. Melloch

Veröffentlichungen von M. R. Melloch zu Melloch, M. R.. ->
weitere Veröffentlichungen von M. R. Melloch:
Molecular beam epitaxy for high electron mobility modulation-doped two-dimensional electron gases (1993)
Growth of crack-free hexagonal GaN films on Si(100) (2001)
Comment on "Mechanism responsible for the semi-insulating properties of low-temperature-growth GaAs'' [Appl. Phys. Lett. 65, 3002 (1994)] (1995)
Permittivity of GaAs epilayers containing arsenic precipitates (1998)
High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide (1992)
Transistor-based studies of heavy doping effects in n-GaAs (1991)
Characterization of photon recycling in thin crystalline GaAs light emitting diodes (1995)
Sidewall gated double well quasi-one-dimensional resonant tunneling transistors (1997)
Optical emission properties of semi-insulating GaAs grown at low temperatures by molecular beam epitaxy (1992)
Comparison of terahertz waveforms measured by electro-optic and photoconductive sampling (1998)
Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide (2000)
Schottky barrier formation on (NH4)2S-treated n- and p-type (100)GaAs (1988)
Arsenic precipitates in Al0.3Ga0.7As/GaAs multiple superlattice and quantum well structures (1992)
Effective band-gap shrinkage in GaAs (1994)
Dynamic holography in a reflection/transmission photorefractive quantum-well asymmetric Fabry–Perot (1994)
Veröffentlichungen zu Melloch, M. R..
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1
Melloch, M.R. Molecular beam epitaxy for high electron mobility modulation-doped two-dimensional electron gases
in: Thin Solid Films, in: Thin Solid Films . - Amsterdam : Elsevier, ISSN 0040-6090, ZDB-ID 1482896-0 Vol. 231, No. 1-2 (1993), p. 74-85
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1993
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2
Wan, J.., Venugopal, R.., ... Growth of crack-free hexagonal GaN films on Si(100)
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 79, No. 10 (2001), p. 1459-1461
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2001
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3
Melloch, M. R.., Woodall, J. M.. Comment on "Mechanism responsible for the semi-insulating properties of low-temperature-growth GaAs'' [Appl. Phys. Lett. 65, 3002 (1994)]
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 67, No. 9 (1995), p. 1331-1332
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1995
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4
Vasudevan, A.., Carin, S.., ... Permittivity of GaAs epilayers containing arsenic precipitates
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 73, No. 5 (1998), p. 671-673
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1998
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5
Matyi, R. J.., Melloch, M. R.., ... High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 60, No. 21 (1992), p. 2642-2644
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1992
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6
Patkar, M. P.., Lundstrom, M. S.., ... Transistor-based studies of heavy doping effects in n-GaAs
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 15 (1991), p. 1853-1854
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1991
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7
Patkar, M. P.., Lundstrom, M. S.., ... Characterization of photon recycling in thin crystalline GaAs light emitting diodes
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 78, No. 4 (1995), p. 2817-2822
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1995
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8
Kolagunta, V. R.., Janes, D. B.., ... Sidewall gated double well quasi-one-dimensional resonant tunneling transistors
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 71, No. 23 (1997), p. 3379-3381
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1997
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9
Viturro, R. Enrique., Melloch, Michael R.., ... Optical emission properties of semi-insulating GaAs grown at low temperatures by molecular beam epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 60, No. 24 (1992), p. 3007-3009
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1992
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10
Park, Sang-Gyu., Melloch, M. R.., ... Comparison of terahertz waveforms measured by electro-optic and photoconductive sampling
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 73, No. 22 (1998), p. 3184-3186
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1998
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11
Capano, M. A.., Cooper, J. A.., ... Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 87, No. 12 (2000), p. 8773-8777
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2000
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12
Carpenter, M. S.., Melloch, M. R.., ... Schottky barrier formation on (NH4)2S-treated n- and p-type (100)GaAs
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 53, No. 1 (1988), p. 66-68
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1988
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13
Mahalingam, K.., Otsuka, N.., ... Arsenic precipitates in Al0.3Ga0.7As/GaAs multiple superlattice and quantum well structures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 60, No. 26 (1992), p. 3253-3255
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1992
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14
Harmon, E. S.., Melloch, M. R.., ... Effective band-gap shrinkage in GaAs
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 64, No. 4 (1994), p. 502-504
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1994
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15
Kwolek, K. M.., Melloch, M. R.., ... Dynamic holography in a reflection/transmission photorefractive quantum-well asymmetric Fabry–Perot
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 65, No. 4 (1994), p. 385-387
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1994
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16
Chang, J. C. P.., Ye, J.., ... Formation of elemental Ag precipitates in AlGaAs by ion implantation and thermal annealing
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 71, No. 24 (1997), p. 3501-3503
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1997
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17
Qian, Q.-D.., Melloch, M. R.., ... Electrical behavior of a static hole inversion layer at the i-AlAs/n-GaAs heterojunction
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 65, No. 8 (1989), p. 3118-3126
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1989
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18
Melloch, M. R.., Miller, D. C.., ... Effect of a GaAs buffer layer grown at low substrate temperatures on a high-electron-mobility modulation-doped two-dimensional electron gas
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 54, No. 10 (1989), p. 943-945
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1989
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19
Kleine, J. S.., Melloch, M. R.., ... Effect of Al mole fraction on electron emission at the AlxGa1−xAs/GaAs interface
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 55, No. 16 (1989), p. 1656-1658
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1989
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20
Neudeck, P. G.., Cooper, J. A.., ... Experimental measurement of bulk and edge generation in Al0.4Ga0.6As PiN structures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 58, No. 11 (1991), p. 1175-1177
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1991