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L. G. Matus

Veröffentlichungen von L. G. Matus zu Matus, L. G.. ->
weitere Veröffentlichungen von L. G. Matus:
Convenient mounting method for electrical measurements of thin samples (1986)
High-voltage 6H-SiC p-n junction diodes (1991)
Water-Use Efficiency and Carbon Isotopic Composition in Reduced Tillage Systems (1999)
Transport and vibrational spectra of oxygen doped Y Ba"2Cu"3O"6"+"δ (1988)
Vibrational spectra and a potential function for the monofluorocyclopropenyl-d0 and -d2 cations (1980)
Application of oxidation to the structural characterization of SiC epitaxial films (1991)
Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers (1991)
Growth of improved quality 3C-SiC films on 6H-SiC substrates (1990)
Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers (1990)
Veröffentlichungen zu Matus, L. G..
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1
Matus, L. G.., Summers, R. L.. Convenient mounting method for electrical measurements of thin samples
In: Review of Scientific Instruments. - [S.l.] : American Institute of Physics, ISSN 1089-7623, Vol. 57, No. 7 (1986), p. 1437-1438
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1986
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2
Matus, L. G.., Powell, J. A.., ... High-voltage 6H-SiC p-n junction diodes
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 14 (1991), p. 1770-1772
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1991
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3
Walley, F. L., Lafond, G. P., ... Water-Use Efficiency and Carbon Isotopic Composition in Reduced Tillage Systems
in: Soil Science Society of America journal , ISSN 1435-0661, Vol. 63 (2. 1999), p. 356-361
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1999
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4
Kuzmany, H., Matus, M., ... Transport and vibrational spectra of oxygen doped Y Ba"2Cu"3O"6"+"δ
in: Solid State Communications, in: Solid State Communications . - Amsterdam : Elsevier, ISSN 0038-1098, ZDB-ID 1467698-9 Vol. 65, No. 11 (1988), p. 1343-1346
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1988
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5
Craig, Norman C.. Vibrational spectra and a potential function for the monofluorocyclopropenyl-d0 and -d2 cations
In: American Chemical Society: Journal of the American Chemical Society. - Washington, DC : American Chemical Society, ISSN 1520-5126, Vol. 102, No. 1 (1980), p. 38-46
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1980
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6
Powell, J. A.., Petit, J. B.., ... Application of oxidation to the structural characterization of SiC epitaxial films
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 2 (1991), p. 183-185
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1991
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7
Powell, J. A.., Petit, J. B.., ... Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 3 (1991), p. 333-335
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1991
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8
Powell, J. A.., Larkin, D. J.., ... Growth of improved quality 3C-SiC films on 6H-SiC substrates
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 56, No. 14 (1990), p. 1353-1355
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1990
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9
Powell, J. A.., Larkin, D. J.., ... Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 56, No. 15 (1990), p. 1442-1444
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1990