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Hiroyuki Matsunami

Veröffentlichungen von Hiroyuki Matsunami zu Matsunami, Hiroyuki. ->
weitere Veröffentlichungen von Hiroyuki Matsunami:
Origin of the optical gap dependence of a-SiGe solar cell stability (1998)
Hydrogen incorporation scheme in hydrogenated amorphous silicon/silicon carbon multilayers (1990)
Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H-SiC{0001} vicinal surfaces (1994)
Nucleation and step motion in chemical vapor deposition of SiC on 6H-SiC{0001} faces (1994)
Surface diffusion lengths of adatoms on 6H-SiC{0001} faces in chemical vapor deposition of SiC (1995)
Polytype-controlled single-crystal growth of silicon carbide using 3C→6H solid-state phase transformation (1991)
Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001} (1997)
Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H–SiC substrate by HCl gas etching (2002)
Shallow states at SiO2/4H-SiC interface on (112¯0) and (0001) faces (2002)
Deep levels in 6H-SiC wafers and step-controlled epitaxial layers (1994)
Step bunching in chemical vapor deposition of 6H– and 4H–SiC on vicinal SiC(0001) faces (1995)
Incorporation mechanism of N, Al, and B impurities in chemical vapor deposition of SiC (1995)
Temperature dependence of fluorescence decays of isolated Rhodamine B molecules adsorbed on semiconductor single crystals (1989)
Initial stage for heteroepitaxy of 3C–SiC on the Si(001) surface in dimethylgermane source molecular beam epitaxy (1997)
Epitaxial growth and electric characteristics of cubic SiC on silicon (1987)
Veröffentlichungen zu Matsunami, Hiroyuki.
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1
Terakawa, Akira., Matsunami, Hiroyuki. Origin of the optical gap dependence of a-SiGe solar cell stability
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 84, No. 8 (1998), p. 4611-4616
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1998
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2
Yoshimoto, Masahiro., Matsunami, Hiroyuki. Hydrogen incorporation scheme in hydrogenated amorphous silicon/silicon carbon multilayers
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 67, No. 10 (1990), p. 6301-6305
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1990
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3
Kimoto, Tsunenobu., Matsunami, Hiroyuki. Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H-SiC{0001} vicinal surfaces
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 75, No. 2 (1994), p. 850-859
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1994
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4
Kimoto, Tsunenobu., Matsunami, Hiroyuki. Nucleation and step motion in chemical vapor deposition of SiC on 6H-SiC{0001} faces
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 76, No. 11 (1994), p. 7322-7327
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1994
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5
Kimoto, Tsunenobu., Matsunami, Hiroyuki. Surface diffusion lengths of adatoms on 6H-SiC{0001} faces in chemical vapor deposition of SiC
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 78, No. 5 (1995), p. 3132-3137
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1995
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6
Yoo, Woo Sik., Matsunami, Hiroyuki. Polytype-controlled single-crystal growth of silicon carbide using 3C→6H solid-state phase transformation
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 70, No. 11 (1991), p. 7124-7131
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1991
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7
Kimoto, Tsunenobu., Itoh, Akira., ... Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001}
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 81, No. 8 (1997), p. 3494-3500
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1997
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8
Onojima, Norio., Suda, Jun., ... Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H–SiC substrate by HCl gas etching
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 80, No. 1 (2002), p. 76-78
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2002
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9
Yano, Hiroshi., Kimoto, Tsunenobu., ... Shallow states at SiO2/4H-SiC interface on (112¯0) and (0001) faces
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 81, No. 2 (2002), p. 301-303
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2002
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10
Jang, Seongjoo., Kimoto, Tsunenobu., ... Deep levels in 6H-SiC wafers and step-controlled epitaxial layers
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 65, No. 5 (1994), p. 581-583
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1994
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11
Kimoto, Tsunenobu., Itoh, Akira., ... Step bunching in chemical vapor deposition of 6H– and 4H–SiC on vicinal SiC(0001) faces
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 66, No. 26 (1995), p. 3645-3647
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1995
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12
Kimoto, Tsunenobu., Itoh, Akira., ... Incorporation mechanism of N, Al, and B impurities in chemical vapor deposition of SiC
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 67, No. 16 (1995), p. 2385-2387
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1995
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13
Kemnitz, Klaus. Temperature dependence of fluorescence decays of isolated Rhodamine B molecules adsorbed on semiconductor single crystals
In: The journal of physical chemistry . - Washington, DC : American Chemical Society, Vol. 93, No. 18 (1989), p. 6704-6710
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1989
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14
Hatayama, Tomoaki., Tanaka, Norihiro., ... Initial stage for heteroepitaxy of 3C–SiC on the Si(001) surface in dimethylgermane source molecular beam epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 70, No. 11 (1997), p. 1411-1413
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1997
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15
Nishino, Shigehiro., Suhara, Hajime., ... Epitaxial growth and electric characteristics of cubic SiC on silicon
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 61, No. 10 (1987), p. 4889-4893
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1987
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16
Nakamura, Shun-ichi., Kimoto, Tsunenobu., ... Formation of periodic steps with a unit-cell height on 6H–SiC (0001) surface by HCl etching
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 76, No. 23 (2000), p. 3412-3414
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2000
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17
Yano, Hiroshi., Hirao, Taichi., ... A cause for highly improved channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors on the (112¯0) face
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 78, No. 3 (2001), p. 374-376
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2001
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18
Kimoto, Tsunenobu., Nakazawa, Satoshi., ... Reduction of doping and trap concentrations in 4H–SiC epitaxial layers grown by chemical vapor deposition
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 79, No. 17 (2001), p. 2761-2763
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2001
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19
Kimoto, Tsunenobu., Miyamoto, Nao., ... High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 91, No. 7 (2002), p. 4242-4248
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2002
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20
Nakamura, Shun-ichi., Kumagai, Hironori., ... Anisotropy in breakdown field of 4H–SiC
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 80, No. 18 (2002), p. 3355-3357
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2002