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Jong-Lam Lee

Veröffentlichungen von Jong-Lam Lee zu Lee, Jong-Lam. ->
weitere Veröffentlichungen von Jong-Lam Lee:
Thermal degradation mechanism of Ti/Pt/Au Schottky contact to n-type GaAs (1997)
Sulfur doping of GaAs with (NH4)2Sx solution (1999)
Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment (1998)
Determination of energy levels of surface states in GaAs metal–semiconductor field-effect transistor using deep-level transient spectroscopy (1999)
Effects of deep levels on transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor (1999)
Positron annihilation study of Pd contacts on impurity-doped GaN (2001)
The effect of lattice defects induced by cathodic hydrogen charging on the apparent diffusivity of hydrogen in pure iron (1987)
The hydrogen solubility in AISI 4340 steel in the temperature range of 298 to 873 K and atmospheric hydrogen pressure (1982)
Evidence for the formation of n+-GaAs layer in Pd/Ge ohmic contact to n-type GaAs (1997)
Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer (1997)
Microstructural and electrical investigation of Pd/Ge/Ti/Au ohmic contact to pseudomorphic high electron mobility transistor with undoped cap layer (1998)
Selective wet etching of GaAs on AlxGa1−xAs for AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (1998)
Microstructural evidence on direct contact of Au/Ge/Ni/Au ohmic metals to InGaAs channel in pseudomorphic high electron mobility transistor with undoped cap layer (1998)
Evidence on the formation of a heavily Ge-doped layer in Pd/Ge-based ohmic contact to pseudomorphic high electron mobility transistor (1998)
Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (1999)
Veröffentlichungen zu Lee, Jong-Lam.
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1
Lee, Jong-Lam Thermal degradation mechanism of Ti/Pt/Au Schottky contact to n-type GaAs
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 82, No. 10 (1997), p. 5011-5016
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1997
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2
Lee, Jong-Lam Sulfur doping of GaAs with (NH4)2Sx solution
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 85, No. 2 (1999), p. 807-811
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1999
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3
Kim, Jong Kyu., Lee, Jong-Lam. Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 73, No. 20 (1998), p. 2953-2955
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1998
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4
Choi, Kyoung Jin., Lee, Jong-Lam. Determination of energy levels of surface states in GaAs metal–semiconductor field-effect transistor using deep-level transient spectroscopy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 74, No. 8 (1999), p. 1108-1110
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1999
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5
Choi, Kyoung Jin., Lee, Jong-Lam. Effects of deep levels on transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 75, No. 11 (1999), p. 1580-1582
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1999
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6
Lee, Jong-Lam., Kim, Jong Kyu. Positron annihilation study of Pd contacts on impurity-doped GaN
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 78, No. 26 (2001), p. 4142-4144
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2001
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7
Lee, Jong-Lam, Lee, Jai-Young The effect of lattice defects induced by cathodic hydrogen charging on the apparent diffusivity of hydrogen in pure iron
in: Journal of materials science , ISSN 1573-4803, Vol. 22 (11. 1987), p. 3939-3948
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1987
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8
Lee, Jong-Lam, Lee, Jai-Young The hydrogen solubility in AISI 4340 steel in the temperature range of 298 to 873 K and atmospheric hydrogen pressure
in: Journal of materials science , ISSN 1573-4811, Vol. 1 (11. 1982), p. 489-492
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1982
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9
Lee, Jong-Lam., Kim, Yi-Tae. Evidence for the formation of n+-GaAs layer in Pd/Ge ohmic contact to n-type GaAs
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 82, No. 11 (1997), p. 5460-5464
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1997
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10
Kim, Yi-Tae., Lee, Jong-Lam. Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 71, No. 18 (1997), p. 2656-2658
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1997
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11
Kim, Yi-Tae., Lee, Jong-Lam. Microstructural and electrical investigation of Pd/Ge/Ti/Au ohmic contact to pseudomorphic high electron mobility transistor with undoped cap layer
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 84, No. 2 (1998), p. 911-917
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1998
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12
Moon, Eun-A., Lee, Jong-Lam. Selective wet etching of GaAs on AlxGa1−xAs for AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 84, No. 7 (1998), p. 3933-3938
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1998
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13
Lee, Jong-Lam., Kim, Yi-Tae. Microstructural evidence on direct contact of Au/Ge/Ni/Au ohmic metals to InGaAs channel in pseudomorphic high electron mobility transistor with undoped cap layer
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 73, No. 12 (1998), p. 1670-1672
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1998
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14
Lee, Jong-Lam., Kim, Yi-Tae. Evidence on the formation of a heavily Ge-doped layer in Pd/Ge-based ohmic contact to pseudomorphic high electron mobility transistor
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 73, No. 22 (1998), p. 3247-3249
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1998
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15
Oh, Jung-Woo., Lee, Jong-Lam. Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 74, No. 19 (1999), p. 2866-2868
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1999
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16
Lee, Jong-Lam., Oh, Sang Pyo., ... The effect of Pd coating on electron emission from silicon field emitter arrays
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 87, No. 10 (2000), p. 7349-7353
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2000
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17
Han, Sang Youn., Kim, Jong Kyu., ... Pretreatment effects by aqua-regia solution on field emission of diamond film
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 76, No. 25 (2000), p. 3694-3696
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2000
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18
Lee, Jong-Lam., Wei, Long., ... Impurity effect on the creation of Ga vacancies in a Si-doped layer grown on Be-doped GaAs by molecular-beam epitaxy
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 68, No. 11 (1990), p. 5571-5575
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1990
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19
Lee, Jong-Lam., Wei, Long., ... Be diffusion mechanism in GaAs investigated by slow positron beam
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 69, No. 9 (1991), p. 6364-6368
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1991
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20
Lee, Jong-Lam., Wei, Long., ... Impurity effects on both the creation and the migration of Ga vacancies in GaAs
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 70, No. 2 (1991), p. 674-684
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1991