The thermal stability of Ti/Pt/Au Schottky gates on high-low doped GaAs metal–semiconductor field-effect transistors (MESFETs) was investigated in the temperature range of 300–500 °C, using current–voltage and capacitance–voltage measurements and cross-sectional transmission electron... mehr

Ohmic contact to p-type GaN with the lowest contact resistivity was developed by the surface treatment prior to Pd/Au metal deposition. The contact resistivity drastically decreased from 2.9×10−2 to 4.3×10−4 Ω cm2 by the surface treatment using aqua regia. The surface treatment plays a... mehr

The effects of deep levels on the transconductance dispersion in an AlGaAs/InGaAs pseudomorphic high electron mobility transistor was interpreted using capacitance deep level transient spectroscopy (DLTS). Transconductance was decreased by 10% in the frequency range of 10 Hz–10 kHz at the... mehr

Abstract The variation of apparent hydrogen diffuoivity with the applied current density and the types and amounts of hydrogen -induced damage caused by hydrogen during the cathodic charging of hydrogen in pure iron are investigated by thermal analysis techniques, and analysed in the light of... mehr

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Microstructural reactions of PdGe ohmic contact to n-type GaAs were investigated using x-ray diffraction, Auger electron spectroscopy, and slow positron beam. The results were compared with electrical properties to interpret the ohmic contact formation mechanism for the Ge/Pd/n-type GaAs system.... mehr

Microstructural reactions of Pd/Ge/Ti/Au contact to AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped GaAs/AlGaAs cap layer have been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties of... mehr

Microstructural evidence on direct contact of Au/Ge/Ni/Au ohmic metals to a InGaAs channel in AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped GaAs/AlGaAs cap layer was found using transmission electron microscopy, and the results were used to interpret the electrical... mehr

A self-aligned gate pseudomorphic high-electron-mobility transistor (PHEMT) was developed through nonalloyed PdGe ohmic contact on an n+-GaAs cap layer. The lowest contact resistivity obtained was 1.2×10−7 Ω cm2 at 300 °C. This allows us to change the sequence on the formation of... mehr

Field emission of diamond film was enhanced after surface treatment using boiling aqua-regia solution. The current generated by the emission of electrons was distinctly increased and the threshold field was reduced from 18.1 to 13.8 V/μm by the treatment. The amount of C–C bonds was decreased,... mehr

The slow positron beam technique was applied on undoped and Be-doped GaAs to study the effects of Be impurities on both creation and migration of Ga vacancies, VGa, during annealing. It is observed that a monovacancy of VGa is created in Be-doped GaAs to result in enhanced Coulombic interaction... mehr