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T. F. Kuech

Veröffentlichungen von T. F. Kuech zu Kuech, T. F.. ->
weitere Veröffentlichungen von T. F. Kuech:
Perspectives on metal-organic vapor phase epitaxy growth: chemistry, structures and systems (1992)
The use of chloride based precursors in metalorganic vapor phase epitaxy (1991)
Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy (1998)
High temperature adduct formation of trimethylgallium and ammonia (1996)
A near-field scanning optical microscopy study of the uniformity of GaAs surface passivation (1996)
Multiple deep levels in metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporation (1994)
Mechanism of carbon incorporation in MOCVD GaAs (1984)
Characterization of silicon implanted GaAs buffer layers grown by metalorganic chemical vapor deposition (1985)
Oxygen-based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide (1995)
Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metalorganic vapor phase epitaxy (2001)
Improved detection of carbon in GaAs by secondary ion mass spectroscopy: The influence of hydrocarbons in metalorganic vapor phase epitaxy (1988)
Changing photoluminescence intensity from GaAs/Al0.3Ga0.7As heterostructures upon chemisorption of SO2 (1995)
Growth behavior of (C"2H"5)"2GaCl and AsH"3 based GaAs: low reactor pressure and temperatures (1992)
The influence of hydrocarbons in MOVPE GaAs growth: Improved detection of carbon by secondary ion mass spectroscopy (1988)
Oxygen-related defects in low phosphorous content GaAs1−yPy grown by metal organic vapor phase epitaxy (1997)
Veröffentlichungen zu Kuech, T. F..
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1
Kuech, T.F. Perspectives on metal-organic vapor phase epitaxy growth: chemistry, structures and systems
in: Thin Solid Films, in: Thin Solid Films . - Amsterdam : Elsevier, ISSN 0040-6090, ZDB-ID 1482896-0 Vol. 216, No. 1 (1992), p. 77-83
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1992
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2
Kuech, T.F. The use of chloride based precursors in metalorganic vapor phase epitaxy
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 115, No. 1-4 (1991), p. 52-60
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1991
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3
Zhang, R.., Kuech, T. F.. Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 72, No. 13 (1998), p. 1611-1613
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1998
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4
Thon, A.., Kuech, T. F.. High temperature adduct formation of trimethylgallium and ammonia
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 69, No. 1 (1996), p. 55-57
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1996
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5
Liu, Jutong., Kuech, T. F.. A near-field scanning optical microscopy study of the uniformity of GaAs surface passivation
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 69, No. 5 (1996), p. 662-664
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1996
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6
Huang, J. W.., Kuech, T. F.. Multiple deep levels in metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporation
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 65, No. 5 (1994), p. 604-606
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1994
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7
Kuech, T.F., Veuhoff, E. Mechanism of carbon incorporation in MOCVD GaAs
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 68, No. 1 (1984), p. 148-156
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1984
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8
Kuech, T. F.., Potemski, R.., ... Characterization of silicon implanted GaAs buffer layers grown by metalorganic chemical vapor deposition
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 58, No. 3 (1985), p. 1196-1203
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1985
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9
Huang, J. W.., Kuech, T. F.., ... Oxygen-based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 67, No. 8 (1995), p. 1116-1118
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1995
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10
Zhang, L.., Tang, H. F.., ... Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metalorganic vapor phase epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 79, No. 19 (2001), p. 3059-3061
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2001
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11
Scilla, G. J.., Kuech, T. F.., ... Improved detection of carbon in GaAs by secondary ion mass spectroscopy: The influence of hydrocarbons in metalorganic vapor phase epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 52, No. 20 (1988), p. 1704-1706
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1988
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12
Geisz, J. F.., Kuech, T. F.., ... Changing photoluminescence intensity from GaAs/Al0.3Ga0.7As heterostructures upon chemisorption of SO2
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 77, No. 3 (1995), p. 1233-1240
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1995
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13
Kuech, T.F., Potemski, R., ... Growth behavior of (C"2H"5)"2GaCl and AsH"3 based GaAs: low reactor pressure and temperatures
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 124, No. 1-4 (1992), p. 318-325
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1992
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14
Kuech, T.F., Scilla, G.J., ... The influence of hydrocarbons in MOVPE GaAs growth: Improved detection of carbon by secondary ion mass spectroscopy
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 93, No. 1-4 (1988), p. 550-556
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1988
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15
Cederberg, J. G.., Bray, K. L.., ... Oxygen-related defects in low phosphorous content GaAs1−yPy grown by metal organic vapor phase epitaxy
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 82, No. 5 (1997), p. 2263-2269
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1997
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16
Kuech, T. F.., Tischler, M. A.., ... Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 54, No. 10 (1989), p. 910-912
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1989
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17
Tischler, M. A.., Kuech, T. F.., ... Electrical characteristics of regrown interfaces using diethylgallium chloride-based metalorganic vapor phase epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 55, No. 21 (1989), p. 2214-2216
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1989
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18
Palevski, A.., Solomon, P.., ... Regrown ohmic contacts to thin GaAs layers and two-dimensional electron gas
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 56, No. 2 (1990), p. 171-173
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1990
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19
Chen, C.-P.., Chang, Y. A.., ... Schottky enhancement of reacted NiAl/n-GaAs contacts
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 64, No. 25 (1994), p. 3485-3487
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1994
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20
Chen, C.-P.., Chang, Y. A.., ... Schottky barrier enhancement using reacted Ni2Al3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs, and NiAl/Al/Ni/n-GaAs contacts
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 77, No. 9 (1995), p. 4777-4782
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1995