The inhibitory effects of tanshinone IIA, a diterpene isolated from SALVIA MILTIORRHIZA root, on the production of nitric oxide (NO), interleukin-1β (IL-1β), interleukin-6 (IL-6) and tumor necrosis factor-α (TNF-α), and the expression of inducible nitric oxide synthase (iNOS) were... mehr

The enantiomerically pure (2 S,3 R)- and (2 S,3 S)-3-amino-2-hydroxy-4-phenylbutanoicacids (AHPBA) were first obtained from sugar in a chirospecificmanner. Additionally, the obtained ( 2S, 3R)-AHPBA 1 waseasily applied to the synthesis of (-)-bestatin.. mehr

Nitric oxide (NO) and tumor necrosis factor α (TNF-α) are the major mediators produced in activated macrophages which contribute to the circulatory failure associated with septic shock. A sesquiterpene lactone compound (dehydrocostus lactone) isolated from the medicinal plant, SAUSSUREA LAPPA,... mehr

The 1% boron-doped hydrogenated amorphous silicon (a-Si:H) has a sharp absorption edge, a low density of gap states, and a large optical gap of 1.82 eV when the substrate temperature is around 90 °C. The photoconductivity of these samples is nearly independent of substrate and annealing... mehr

In this paper we find the microscopic mechanism of persistent photoconductivity in doping-modulated amorphous silicon superlattices is the same as that of compensated amorphous silicon. The carrier separation due to a built-in n-p junction field can explain persistent photoconductivity in... mehr

We have developed a carbon nanostructure, which is comprised of high-density carbon nanotips on a graphite layer. These carbon nanotips, with tip diameters of ∼10 nm, are grown by high-density plasma chemical vapor deposition onto Ni-coated Si using an inductively coupled plasma. The Ni on Si... mehr

Boron-doped hydrogenated amorphous silicon deposited at 100 °C exhibits a decrease of dark conductivity and an increase of doping efficiency, simultaneously, during band-gap light illumination. We prove that these two effects are bulk effects and that their origins are different. The decrease in... mehr

Thermal equilibration processes in diode structures of doped hydrogenated amorphous silicon have been studied. Fast cooling from above the thermal equilibrium temperature (TE) results in an increase in dark reverse current as well as in forward current. The reverse leakage current and the diode... mehr

Polycrystalline silicon was deposited on Corning 7059 glass by remote plasma chemical vapor deposition using SiF2/H2. Raman spectroscopy indicated a crystalline fraction of 85% in films deposited at a substrate temperature of 350 °C. Thin film transistors made of this material exhibited a field... mehr

Polycrystalline silicon (poly-Si) thin film transistors (TFTs) were fabricated using as-deposited poly-Si and ion doping. The poly-Si was prepared by a remote plasma chemical vapour deposition at the substrate temperature of 280 °C using a mixture gas of SiF4, SiH4, He, and H2. The n-channel... mehr