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O. J. Glembocki

Veröffentlichungen von O. J. Glembocki zu Glembocki, O. J.. ->
weitere Veröffentlichungen von O. J. Glembocki:
Electronic properties of GaAs surfaces etched in an electron cyclotron resonance source and chemically passivated using P2S5 (1998)
Real time observation of surface kinetics during the self-assembly of Ga chains on Si(112) (1997)
Effects of impurity transitions on electroreflectance in thin epitaxial GaAs and Ga1−xAlxAs/GaAs layers (1985)
Stress and its effect on the interdiffusion in Si1−xGex/Si superlattices (1992)
GaN light emitting diode as a photoreflectance pump source (2000)
Spectrally dependent photocurrent measurements in n+-n-n+ heterostructure devices (1989)
Intervalley electron-phonon and hole-phonon scattering matrix elements in germanium (1983)
Light emission properties of porous silicon (1993)
Light-activated two-level resistance switching: An extremely sensitive GaAs/AlGaAs solid-state photon counter (1990)
Influence of stress on the photoluminescence of porous silicon structures (1992)
Optical characterization of the electrical properties of processed GaAs (1993)
Efficient light emission by impact ionization in single-barrier tunneling devices (1989)
Photoreflectance measurement of strain in epitaxial GaAs on silicon (1990)
Etching roughness for (100) silicon surfaces in aqueous KOH (1991)
Temperature dependence of photoreflectance in GaAs-AlGaAs multiple quantum wells (1986)
Veröffentlichungen zu Glembocki, O. J..
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1
Glembocki, O. J.., Tuchman, J. A.. Electronic properties of GaAs surfaces etched in an electron cyclotron resonance source and chemically passivated using P2S5
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 73, No. 1 (1998), p. 114-116
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1998
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2
Glembocki, O. J.., Prokes, S. M.. Real time observation of surface kinetics during the self-assembly of Ga chains on Si(112)
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 71, No. 16 (1997), p. 2355-2357
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1997
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3
Glembocki, O. J.., Bottka, N.., ... Effects of impurity transitions on electroreflectance in thin epitaxial GaAs and Ga1−xAlxAs/GaAs layers
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 57, No. 2 (1985), p. 432-437
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1985
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4
Prokes, S. M.., Glembocki, O. J.., ... Stress and its effect on the interdiffusion in Si1−xGex/Si superlattices
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 60, No. 9 (1992), p. 1087-1089
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1992
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5
Gaskill, D. K.., Holm, R. T.., ... GaN light emitting diode as a photoreflectance pump source
In: Review of Scientific Instruments. - [S.l.] : American Institute of Physics, ISSN 1089-7623, Vol. 71, No. 11 (2000), p. 4341-4343
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2000
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6
Snow, E. S.., Kirchoefer, S. W.., ... Spectrally dependent photocurrent measurements in n+-n-n+ heterostructure devices
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 54, No. 20 (1989), p. 2023-2025
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1989
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7
Glembocki, O.J., Pollak, F.H. Intervalley electron-phonon and hole-phonon scattering matrix elements in germanium
in: Physica B+C, in: Physica B+C . - Amsterdam : Elsevier, ISSN 0378-4363, ZDB-ID 2208195-1 Vol. 117-118 (1983), p. 546-548
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1983
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8
Prokes, S.M., Glembocki, O.J. Light emission properties of porous silicon
in: Materials Chemistry & Physics, in: Materials Chemistry & Physics . - Amsterdam : Elsevier, ISSN 0254-0584, ZDB-ID 1491959-X Vol. 35, No. 1 (1993), p. 1-10
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1993
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9
Snow, E. S.., Campbell, P. M.., ... Light-activated two-level resistance switching: An extremely sensitive GaAs/AlGaAs solid-state photon counter
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 56, No. 2 (1990), p. 117-119
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1990
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10
Friedersdorf, L. E.., Searson, P. C.., ... Influence of stress on the photoluminescence of porous silicon structures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 60, No. 18 (1992), p. 2285-2287
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1992
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11
Glembocki, O.J., Dagata, J.A., ... Optical characterization of the electrical properties of processed GaAs
in: Applied Surface Science, in: Applied Surface Science . - Amsterdam : Elsevier, ISSN 0169-4332, ZDB-ID 2002520-8 Vol. 63, No. 1-4 (1993), p. 143-152
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1993
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12
Snow, E. S.., Kirchoefer, S. W.., ... Efficient light emission by impact ionization in single-barrier tunneling devices
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 54, No. 21 (1989), p. 2124-2126
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1989
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13
Dimoulas, A.., Tzanetakis, P.., ... Photoreflectance measurement of strain in epitaxial GaAs on silicon
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 67, No. 9 (1990), p. 4389-4392
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1990
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14
Palik, E. D.., Glembocki, O. J.., ... Etching roughness for (100) silicon surfaces in aqueous KOH
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 70, No. 6 (1991), p. 3291-3300
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1991
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15
Glembocki, O.J., Shanabrook, B.V., ... Temperature dependence of photoreflectance in GaAs-AlGaAs multiple quantum wells
in: Surface Science, in: Surface Science . - Amsterdam : Elsevier, ISSN 0039-6028, ZDB-ID 1479030-0 Vol. 174, No. 1-3 (1986), p. 206-210
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1986
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16
Glembocki, O.J., Shanabrook, B.V., ... Temperature dependence of photoreflectance in GaAs-AlGaAs multiple quantum wells
in: Surface Science Letters, in: Surface Science Letters . - Amsterdam : Elsevier, ISSN 0167-2584, ZDB-ID 2229427-2 Vol. 174, No. 1-3 (1986), p. A435
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1986
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17
Palik, E.D., Bermudez, V.M., ... Ellipsometric study of the etch-stop mechanism in heavily doped silicon
in: Solid State Electronics, in: Solid State Electronics . - Amsterdam : Elsevier, ISSN 0038-1101, ZDB-ID 2012825-3 Vol. 28, No. 1-2 (1985), p. 209
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1985
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18
Jonker, B. T.., Kneedler, E. M.., ... Schottky barrier formation for Fe on GaAs(001) and the role of interfacial structure (abstract) : The 41st annual conference on magnetism and magnetic materials.
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 81, No. 8 (1997), p. 4362-4362
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1997
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19
Glembocki, O. J.., Tuchman, J. A.., ... Effects of electron cyclotron resonance etching on the ambient (100) GaAs surface
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 66, No. 22 (1995), p. 3054-3055
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1995
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20
Glembocki, O.J., Snow, E.S., ... Nanoscale photovoltaic imaging using the scanning tunneling microscope
in: Ultramicroscopy, in: Ultramicroscopy . - Amsterdam : Elsevier, ISSN 0304-3991, ZDB-ID 1479043-9 Vol. 42-44 (1992), p. 764-770
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1992