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L.J Giling

Veröffentlichungen von L.J Giling zu Giling, L.J. ->
weitere Veröffentlichungen von L.J Giling:
Construction of a liquid He cryostat insert for high spatial resolution photoluminescence experiments on GaAs (1990)
Revealing of defects in InP by shallow (submicron) photoetching (1985)
A ''rough heart'' model for ''edge'' dislocations which act as persistent growth sources (1984)
On the origin of deep pit formation for gas phase HCl etched (111) silicon wafers (1982)
The incorporation of phosphorus in silicon; The temperature dependence of the segregation coefficient (1975)
Influence of growth parameters on the incorporation of residual impurities in GaAs grown by metalorganic chemical vapor deposition (1986)
Tabulation of the theoretical band-to-band luminescence spectra of heavily doped GaAs and application to experimental n-type GaAs spectra (1990)
Microstructure changes after annealing of undoped and Cr-doped liquid-encapsulated Czochralski-grown GaAs (1991)
On the sublattice location of GaAs grown on Ge (1994)
Radiatively controlled lifetimes in AlxGa1−xAs grown by metalorganic vapor phase epitaxy (1994)
High-spatial-resolution photoluminescence measurements on AlxGa1−xAs grown on a nonplanar substrate by metalorganic vapor phase epitaxy (1994)
Single crystal diamond deposition by laminar and turbulent acetylene-oxygen flames (1995)
Ultralow interface recombination velocity in ordered–disordered GaInP2 double heterostructures (1995)
On the origin of the formation of facets and deep etch pits on HCl etched {111} silicon wafers (1982)
The influence of adsorption and step reconstruction on the growth and etching vectors of silicon (111) (1978)
Veröffentlichungen zu Giling, L.J.
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1
Visser, E. P.., Giling, L. J.. Construction of a liquid He cryostat insert for high spatial resolution photoluminescence experiments on GaAs
In: Review of Scientific Instruments. - [S.l.] : American Institute of Physics, ISSN 1089-7623, Vol. 61, No. 5 (1990), p. 1490-1493
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1990
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2
Weyher, J. L.., Giling, L. J.. Revealing of defects in InP by shallow (submicron) photoetching
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 58, No. 1 (1985), p. 219-222
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1985
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3
Giling, L.J., Dam, B. A ''rough heart'' model for ''edge'' dislocations which act as persistent growth sources
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 67, No. 2 (1984), p. 400-403
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1984
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4
Tsukamoto, K., Giling, L.J. On the origin of deep pit formation for gas phase HCl etched (111) silicon wafers
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 60, No. 2 (1982), p. 338-342
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1982
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5
Giling, L.J., Bloem, J. The incorporation of phosphorus in silicon; The temperature dependence of the segregation coefficient
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 31 (1975), p. 317-322
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1975
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6
van de Ven, J.., Schoot, H. G.., ... Influence of growth parameters on the incorporation of residual impurities in GaAs grown by metalorganic chemical vapor deposition
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 60, No. 5 (1986), p. 1648-1660
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1986
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7
Visser, R.., Lochs, H. G. M.., ... Tabulation of the theoretical band-to-band luminescence spectra of heavily doped GaAs and application to experimental n-type GaAs spectra
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 68, No. 11 (1990), p. 5819-5826
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1990
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8
Visser, E. P.., Weyher, J. L.., ... Microstructure changes after annealing of undoped and Cr-doped liquid-encapsulated Czochralski-grown GaAs
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 69, No. 8 (1991), p. 4234-4246
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1991
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9
Li, Yuan., Lazzarini, L.., ... On the sublattice location of GaAs grown on Ge
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 76, No. 10 (1994), p. 5748-5753
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1994
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10
Thomeer, R. A. J.., Hageman, P. R.., ... Radiatively controlled lifetimes in AlxGa1−xAs grown by metalorganic vapor phase epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 64, No. 12 (1994), p. 1561-1563
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1994
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11
Olsthoorn, S. M.., Bongers, M. M. G.., ... High-spatial-resolution photoluminescence measurements on AlxGa1−xAs grown on a nonplanar substrate by metalorganic vapor phase epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 65, No. 15 (1994), p. 1952-1954
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1994
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12
Schermer, J. J.., Giling, L. J.., ... Single crystal diamond deposition by laminar and turbulent acetylene-oxygen flames
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 78, No. 4 (1995), p. 2376-2384
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1995
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13
van Geelen, A.., Thomeer, R. A. J.., ... Ultralow interface recombination velocity in ordered–disordered GaInP2 double heterostructures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 66, No. 4 (1995), p. 454-456
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1995
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14
Tsukamoto, K., Giling, L.J., ... On the origin of the formation of facets and deep etch pits on HCl etched {111} silicon wafers
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 57, No. 2 (1982), p. 412-427
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1982
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15
Van Enckevort, W.J.P., Giling, L.J. The influence of adsorption and step reconstruction on the growth and etching vectors of silicon (111)
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 45 (1978), p. 90-96
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1978
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16
Gardeniers, J.G.E., Giling, L.J. Vapour growth of silicon: growth anisotropy and adsorption
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 115, No. 1-4 (1991), p. 542-550
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1991
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17
van der Putte, P., Giling, L.J., ... Surface morphology of HCl etched silicon wafers - I. Gas phase composition in the silicon HCl system and surface reactions during etching
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 41, No. 1 (1977), p. 133-145
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1977
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18
Van der Putte, P., Giling, L.J., ... Surface morphology of HC1 etched silicon wafers - III. the origin of etch pits
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 47, No. 3 (1979), p. 437-448
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1979
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19
Rijks, H.J., Bloem, J., ... The effect of trace amounts of oxygen on the HCl etching of silicon
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 47, No. 3 (1979), p. 397-404
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1979
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20
van der Putte, P., Giling, L.J., ... Growth and etching of silicon in chemical vapour deposition systems; The influence of thermal diffusion and temperature gradient
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 31 (1975), p. 299-307
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1975