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A. Galeckas

Veröffentlichungen von A. Galeckas zu Galeckas, A.. ->
weitere Veröffentlichungen von A. Galeckas:
Optical characterization of excess carrier lifetime and surface recombination in 4H/6H–SiC (2001)
Free carrier absorption and lifetime mapping in 4H SiC epilayers (1997)
Auger recombination in 4H-SiC: Unusual temperature behavior (1997)
Time-resolved imaging of radiative recombination in 4H–SiC p-i-n diode (1999)
Application of optical emission microscopy for reliability studies in 4H–SiC p+/n−/n+ diodes (2001)
Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias (2002)
Lateral and cross-well transport of highly and moderately excited carriers in Si1−xGex/Si superlattices (1998)
Optical second harmonic generation in reflection from silicon carbide films (1992)
Nonlinear optical investigation of silicon carbide surface properties (1992)
Effective lifetime measurements in silicon-on-sapphire material by time-resolved reflectometry (1990)
Observation of near-surface electrically active defects in n-type 6H–SiC (1998)
Veröffentlichungen zu Galeckas, A..
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1
Galeckas, A.., Linnros, J.. Optical characterization of excess carrier lifetime and surface recombination in 4H/6H–SiC
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 79, No. 3 (2001), p. 365-367
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2001
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2
Galeckas, A.., Grivickas, V.., ... Free carrier absorption and lifetime mapping in 4H SiC epilayers
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 81, No. 8 (1997), p. 3522-3525
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1997
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3
Galeckas, A.., Linnros, J.., ... Auger recombination in 4H-SiC: Unusual temperature behavior
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 71, No. 22 (1997), p. 3269-3271
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1997
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4
Galeckas, A.., Linnros, J.., ... Time-resolved imaging of radiative recombination in 4H–SiC p-i-n diode
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 74, No. 22 (1999), p. 3398-3400
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1999
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5
Galeckas, A.., Linnros, J.., ... Application of optical emission microscopy for reliability studies in 4H–SiC p+/n−/n+ diodes
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 90, No. 2 (2001), p. 980-984
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2001
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6
Galeckas, A.., Linnros, J.., ... Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 81, No. 5 (2002), p. 883-885
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2002
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7
Galeckas, A.., Juodkazis, S.., ... Lateral and cross-well transport of highly and moderately excited carriers in Si1−xGex/Si superlattices
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 83, No. 9 (1998), p. 4756-4759
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1998
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8
Galeckas, A.., Petrauskas, M.., ... Optical second harmonic generation in reflection from silicon carbide films
in: Surface and Interface Analysis, in: Surface and Interface Analysis . - Chichester [u.a.] : Wiley, ISSN 0142-2421, ZDB-ID 2023881-2 Vol. 18 (1. 1992), p. 71-72
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1992
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9
Galeckas, A., Petrauskas, M., ... Nonlinear optical investigation of silicon carbide surface properties
in: Nuclear Inst. and Methods in Physics Research, B, in: Nuclear Inst. and Methods in Physics Research, B . - Amsterdam : Elsevier, ISSN 0168-583X, ZDB-ID 1466524-4 Vol. 65, No. 1-4 (1992), p. 357-360
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1992
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10
Galeckas, A., Grivickas, V., ... Effective lifetime measurements in silicon-on-sapphire material by time-resolved reflectometry
in: Thin Solid Films, in: Thin Solid Films . - Amsterdam : Elsevier, ISSN 0040-6090, ZDB-ID 1482896-0 Vol. 191, No. 1 (1990), p. 37-45
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1990
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11
Doyle, J. P.., Schöner, A.., ... Observation of near-surface electrically active defects in n-type 6H–SiC
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 83, No. 7 (1998), p. 3649-3651
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1998