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L. F. Eastman

Veröffentlichungen von L. F. Eastman zu Eastman, A. B. ->
weitere Veröffentlichungen von L. F. Eastman:
Gunn Diodes (1973)
Comparison of high field electron transport in GaN and GaAs (1997)
Strain effects on normal incidence hole intersubband absorption in a p-type semiconductor quantum well (1992)
Purity of GaAs grown by LPE in a graphite boat (1976)
A study of the conduction properties of a rectifying nGaAs-n(Ga, Al)As heterojunction (1980)
Comparison of compositionally graded to abrupt emitter-base junctions used in the heterojunction bipolar transistor (1987)
The effect of As4 pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates (2000)
Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1° towards 〈211〉 InP substrates (2000)
Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy (1985)
Hot carrier and hot phonon effects on high-speed quantum well lasers (1993)
Si diffusion in GaInAs-AlInAs high-electron-mobility transistor structures (1986)
Residual impurities in high purity GaAs epitaxial layers grown by liquid phase epitaxy (1980)
An investigation of gold-zinc contacts on n-type indium phosphide (1978)
Growth limitations of strained multiple quantum wells (1994)
Electric current controlled growth and doping modulation in GaAs liquid phase epitaxy (1975)
Veröffentlichungen zu Eastman, A. B.
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1
Randall, A., Ives, B., ... Bidding games for valuation of aesthetic environmental improvements
in: Journal of Environmental Economics and Management, in: Journal of Environmental Economics and Management . - Amsterdam : Elsevier, ISSN 0095-0696, ZDB-ID 1469185-1 Vol. 1, No. 2 (1974), p. 132-149
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1974
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2
Munkholm, A.., Thompson, C.., ... Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 72, No. 23 (1998), p. 2972-2974
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1998
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3
Stephenson, G. B.., Eastman, J. A.., ... Observation of growth modes during metal-organic chemical vapor deposition of GaN
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 74, No. 22 (1999), p. 3326-3328
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1999
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4
Kuang, J. B.., Chen, Y. K.., ... High-current lattice-strained In0.59Ga0.41As/In0.52Al0.48As modulation-doped field-effect transistors grown by molecular beam epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 57, No. 17 (1990), p. 1784-1786
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1990
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5
Eastman, J. T., Boyd, R. B., ... Renal corpuscle development in boreal fishes with and without antifreezes
in: Fish physiology and biochemistry , ISSN 1573-5168, Vol. 4 (2. 1987), p. 89-100
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1987
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6
Eastman, P. Ann K., Webster, Fiona B., ... Evaluation of somaclonal variation during somatic embryogenesis of interior spruce (Picea glauca engelmannii complex) using culture morphology and isozyme analysis
in: Plant cell reports , ISSN 1432-203X, Vol. 10 (8. 1991), p. 425-430
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1991
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7
Cosman, B. C., Eastman, D. A., ... Hemorrhoidal bleeding in chronic spinal cord injury: results of multiple banding
in: International journal of colorectal disease , ISSN 1432-1262, Vol. 9 (4. 1994), p. 174-176
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1994
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8
Boyd, R. B., DeVries, A. L., ... The secondary lamellae of the gills of cold water (high latitude) teleosts
in: Cell & tissue research , ISSN 1432-0878, Vol. 213 (3. 1980), p. 361-367
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1980
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9
Rank, D.H., Eastman, D.P., ... Breadths and shifts of molecular band lines due to perturbation by foreign gases
in: Journal of Molecular Spectroscopy, in: Journal of Molecular Spectroscopy . - Amsterdam : Elsevier, ISSN 0022-2852, ZDB-ID 1469771-3 Vol. 10, No. 1-6 (1963), p. 34-50
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1963
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10
Lester, L. F.., Offsey, S. D.., ... Comparison of the theoretical and experimental differential gain in strained layer InGaAs/GaAs quantum well lasers
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 10 (1991), p. 1162-1164
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1991
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11
Norris, T. B.., Song, X. J.., ... Tunneling escape time of electrons from a quantum well under the influence of an electric field
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 54, No. 1 (1989), p. 60-62
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1989
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12
LeTran, T. T.., Schaff, W. J.., ... Phonon scattering suppression in short periodic AlAs/GaAs multiple-quantum-well structures
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 75, No. 7 (1994), p. 3491-3499
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1994
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13
Wise, S.L., Plake, B.S., ... The effects of item feedback and examinee control on test performance and anxiety in a computer-administered test
in: Computers in Human Behavior, in: Computers in Human Behavior . - Amsterdam : Elsevier, ISSN 0747-5632, ZDB-ID 2001911-7 Vol. 2, No. 1 (1986), p. 21-29
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1986
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14
Shai, Yechiel., Kirk, Kenneth L.., ... Fluorine-18 labeled insulin: a prosthetic group methodology for incorporation of a positron emitter into peptides and proteins
In: Biochemistry. - Columbus, Ohio : American Chemical Society, ISSN 1520-4995, Vol. 28, No. 11 (1989), p. 4801-4806
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1989
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15
Kaindl, G., Reihl, B., ... Surface core-level shifts and surface valence change in mixed-valent YbAl"2
in: Solid State Communications, in: Solid State Communications . - Amsterdam : Elsevier, ISSN 0038-1098, ZDB-ID 1467698-9 Vol. 41, No. 2 (1982), p. 157-160
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1982
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16
Norris, T.B., Mourou, G.A., ... Time-resolved photoluminescence spectroscopy of GaAs quantum well tunneling structures
in: Surface Science, in: Surface Science . - Amsterdam : Elsevier, ISSN 0039-6028, ZDB-ID 1479030-0 Vol. 228, No. 1-3 (1990), p. 393-398
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1990
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17
Garrido, J. A.., Foutz, B. E.., ... Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 76, No. 23 (2000), p. 3442-3444
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2000
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18
Murty, M. V. Ramana., Streiffer, S. K.., ... In situ x-ray scattering study of PbTiO3 chemical-vapor deposition
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 80, No. 10 (2002), p. 1809-1811
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2002
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19
Kuang, J. B.., Tasker, P. J.., ... Low frequency and microwave characterization of submicron-gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal-semiconductor field-effect transistors grown by...
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 66, No. 12 (1989), p. 6168-6174
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1989
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20
Kuang, J. B.., Tasker, P. J.., ... Submicron-gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal-semiconductor field-effect transistors grown by molecular beam epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 54, No. 12 (1989), p. 1136-1138
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1989