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D. J. DiMaria

Veröffentlichungen von D. J. DiMaria zu DiMaria, D. J. ->
weitere Veröffentlichungen von D. J. DiMaria:
Dependence on gate work function of oxide charging, defect generation, and hole currents in metal–oxide–semiconductor structures (1997)
Defect generation under substrate-hot-electron injection into ultrathin silicon dioxide layers (1999)
Electron energy dependence of metal-oxide-semiconductor degradation (1999)
Defect generation in field-effect transistors under channel-hot-electron stress (2000)
Defect generation in ultrathin silicon dioxide films produced by anode hole injection (2000)
Correlation of trap creation with electron heating in silicon dioxide (1987)
Temperature dependence of trap creation in silicon dioxide (1990)
Explanation for the polarity dependence of breakdown in ultrathin silicon dioxide films (1996)
Mechanism for stress-induced leakage currents in thin silicon dioxide films (1995)
Interface and bulk trap generation in metal-oxide-semiconductor capacitors (1990)
Impact ionization and positive charge formation in silicon dioxide films on silicon (1992)
Degradation and breakdown of silicon dioxide films on silicon (1992)
Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon (1993)
Anode hole injection and trapping in silicon dioxide (1996)
Electron heating in silicon nitride and silicon oxynitride films (1986)
Veröffentlichungen zu DiMaria, D. J.
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1
DiMaria, D. J. Dependence on gate work function of oxide charging, defect generation, and hole currents in metal–oxide–semiconductor structures
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 81, No. 7 (1997), p. 3220-3226
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1997
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2
DiMaria, D. J. Defect generation under substrate-hot-electron injection into ultrathin silicon dioxide layers
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 86, No. 4 (1999), p. 2100-2109
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1999
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3
DiMaria, D. J. Electron energy dependence of metal-oxide-semiconductor degradation
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 75, No. 16 (1999), p. 2427-2428
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1999
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4
DiMaria, D. J. Defect generation in field-effect transistors under channel-hot-electron stress
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 87, No. 12 (2000), p. 8707-8715
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2000
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5
DiMaria, D. J. Defect generation in ultrathin silicon dioxide films produced by anode hole injection
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 77, No. 17 (2000), p. 2716-2718
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2000
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6
DiMaria, D. J. Correlation of trap creation with electron heating in silicon dioxide
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 51, No. 9 (1987), p. 655-657
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1987
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7
DiMaria, D. J. Temperature dependence of trap creation in silicon dioxide
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 68, No. 10 (1990), p. 5234-5246
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1990
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8
DiMaria, D. J. Explanation for the polarity dependence of breakdown in ultrathin silicon dioxide films
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 68, No. 21 (1996), p. 3004-3006
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1996
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9
DiMaria, D. J.., Cartier, E.. Mechanism for stress-induced leakage currents in thin silicon dioxide films
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 78, No. 6 (1995), p. 3883-3894
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1995
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10
Buchanan, D. A.., DiMaria, D. J.. Interface and bulk trap generation in metal-oxide-semiconductor capacitors
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 67, No. 12 (1990), p. 7439-7452
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1990
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11
DiMaria, D. J.., Arnold, D.., ... Impact ionization and positive charge formation in silicon dioxide films on silicon
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 60, No. 17 (1992), p. 2118-2120
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1992
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12
DiMaria, D. J.., Arnold, D.., ... Degradation and breakdown of silicon dioxide films on silicon
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 61, No. 19 (1992), p. 2329-2331
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1992
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13
DiMaria, D. J.., Cartier, E.., ... Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 73, No. 7 (1993), p. 3367-3384
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1993
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14
DiMaria, D. J.., Cartier, E.., ... Anode hole injection and trapping in silicon dioxide
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 80, No. 1 (1996), p. 304-317
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1996
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15
DiMaria, D. J.., Abernathey, J. R.. Electron heating in silicon nitride and silicon oxynitride films
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 60, No. 5 (1986), p. 1727-1729
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1986
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16
DiMaria, D. J.., Stathis, J. H.. Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 70, No. 20 (1997), p. 2708-2710
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1997
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17
DiMaria, D. J.., Stathis, J. H.. Ultimate limit for defect generation in ultra-thin silicon dioxide
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 71, No. 22 (1997), p. 3230-3232
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1997
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18
DiMaria, D. J.., Stathis, J. H.. Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 74, No. 12 (1999), p. 1752-1754
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1999
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19
DiMaria, D. J.., Stathis, J. H.. Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 89, No. 9 (2001), p. 5015-5024
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2001
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20
DiMaria, D. J.., Stasiak, J. W.. Trap creation in silicon dioxide produced by hot electrons
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 65, No. 6 (1989), p. 2342-2356
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1989