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F. Cardone

Veröffentlichungen von F. Cardone zu Cardone, F.. ->
weitere Veröffentlichungen von F. Cardone:
Preparation of macrolides via the Wittig reaction. A total synthesis of (-)-vermiculine (1978)
Mg in GaN: Incorporation of a volatile species at high temperatures during molecular beam epitaxy (1997)
Non-standard peak values of the Bose-Einstein correlations and their possible interpretation by a metric description of strong interactions (1998)
Improved detection of carbon in GaAs by secondary ion mass spectroscopy: The influence of hydrocarbons in metalorganic vapor phase epitaxy (1988)
Growth behavior of (C"2H"5)"2GaCl and AsH"3 based GaAs: low reactor pressure and temperatures (1992)
The influence of hydrocarbons in MOVPE GaAs growth: Improved detection of carbon by secondary ion mass spectroscopy (1988)
Improvement of Cardiovascular Autonomic Reflexes after Amelioration of Metabolic Control in Insulin-Dependent Diabetic Subjects with Severe Autonomic Neuropathy (1985)
N+ doping of gallium arsenide by rapid thermal oxidation of a silicon cap (1990)
Formation of highly n-doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon-capped gallium arsenide (1991)
Film stress of sputtered W/C multilayers and strain relaxation upon annealing (1994)
Deep levels in p-type GaAs grown by metalorganic vapor phase epitaxy (1988)
Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy (1988)
Effect of F co-implant during annealing of Be-implanted GaAs (1990)
The use of azo-compounds as probes of carbon incorporation of nominally undoped metalorganic vapor phase epitaxy grown GaAs (1991)
Thermal stability of Si1−xCx/Si strained layer superlattices (1992)
Veröffentlichungen zu Cardone, F..
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1
Burri, Kaspar F.. Preparation of macrolides via the Wittig reaction. A total synthesis of (-)-vermiculine
In: American Chemical Society: Journal of the American Chemical Society. - Washington, DC : American Chemical Society, ISSN 1520-5126, Vol. 100, No. 22 (1978), p. 7069-7071
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1978
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2
Guha, S.., Bojarczuk, N. A.., ... Mg in GaN: Incorporation of a volatile species at high temperatures during molecular beam epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 71, No. 12 (1997), p. 1685-1687
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1997
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3
Cardone, F., Gaspero, M., ... Non-standard peak values of the Bose-Einstein correlations and their possible interpretation by a metric description of strong interactions
in: The European physical journal , ISSN 1434-6052, Vol. 4 (4. 1998), p. 705-709
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1998
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4
Scilla, G. J.., Kuech, T. F.., ... Improved detection of carbon in GaAs by secondary ion mass spectroscopy: The influence of hydrocarbons in metalorganic vapor phase epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 52, No. 20 (1988), p. 1704-1706
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1988
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5
Kuech, T.F., Potemski, R., ... Growth behavior of (C"2H"5)"2GaCl and AsH"3 based GaAs: low reactor pressure and temperatures
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 124, No. 1-4 (1992), p. 318-325
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1992
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6
Kuech, T.F., Scilla, G.J., ... The influence of hydrocarbons in MOVPE GaAs growth: Improved detection of carbon by secondary ion mass spectroscopy
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 93, No. 1-4 (1988), p. 550-556
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1988
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7
Fedele, D.. Improvement of Cardiovascular Autonomic Reflexes after Amelioration of Metabolic Control in Insulin-Dependent Diabetic Subjects with Severe Autonomic Neuropathy
In: Hormone and metabolic research. - Stuttgart [u.a.] : Thieme Vol. 17, No. 08 (8. 1985), p. 410-413
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1985
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8
Sadana, D. K.., de Souza, J. P.., ... N+ doping of gallium arsenide by rapid thermal oxidation of a silicon cap
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 57, No. 16 (1990), p. 1681-1683
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1990
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9
Sadana, D. K.., de Souza, J. P.., ... Formation of highly n-doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon-capped gallium arsenide
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 58, No. 11 (1991), p. 1190-1192
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1991
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10
Geisz, J. F.., Kuech, T. F.., ... Film stress of sputtered W/C multilayers and strain relaxation upon annealing
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 75, No. 3 (1994), p. 1530-1533
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1994
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11
Wang, P. J.., Kuech, T. F.., ... Deep levels in p-type GaAs grown by metalorganic vapor phase epitaxy
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 64, No. 10 (1988), p. 4975-4986
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1988
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12
Kuech, T. F.., Tischler, M. A.., ... Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 53, No. 14 (1988), p. 1317-1319
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1988
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13
Hallali, P. E.., Baratte, H.., ... Effect of F co-implant during annealing of Be-implanted GaAs
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 57, No. 6 (1990), p. 569-571
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1990
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14
Buchan, N. I.., Kuech, T. F.., ... The use of azo-compounds as probes of carbon incorporation of nominally undoped metalorganic vapor phase epitaxy grown GaAs
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 69, No. 4 (1991), p. 2156-2160
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1991
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15
Goorsky, M. S.., Iyer, S. S.., ... Thermal stability of Si1−xCx/Si strained layer superlattices
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 60, No. 22 (1992), p. 2758-2760
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1992
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16
Buchan, N.I., Kuech, T.F., ... Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CH"yX"4" "-" "y, TMG and AsH"3
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 110, No. 3 (1991), p. 405-414
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1991
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17
Kuech, T.F., Tischler, M.A., ... Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy
in: Journal of Crystal Growth, in: Journal of Crystal Growth . - Amsterdam : Elsevier, ISSN 0022-0248, ZDB-ID 1466514-1 Vol. 98, No. 1-2 (1989), p. 174-187
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1989
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18
de Souza, J. P.., Sadana, D. K.., ... Annealing behavior of GaAs implanted with Si+ and SiF+ and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 57, No. 11 (1990), p. 1129-1132
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1990
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19
Sadana, D. K.., de Souza, J. P.., ... Passivation of n and p dopants in ion-implanted GaAs by a 2D+ plasma
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 58, No. 4 (1991), p. 385-387
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1991
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20
Tischler, M. A.., Mooney, P. M.., ... Metalorganic vapor phase epitaxy and characterization of boron-doped (Al,Ga)As
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 71, No. 2 (1992), p. 984-992
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1992