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zeige Details Voland, G., Pagnia, H. Influence of X-irradiation on the solicon-silicon dioxide interface of MOS structures
in: Applied physics , ISSN 1432-0630, Vol. 3 (1. 1974), p. 77-80
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1974
Abstract Silicon MOS structures with an SiO2−Si3N4 insulator were exposed to X-rays. Positive oxide charges arise and the continuous density of fast states increases at the Si−SiO2 interface. In addition, a single energy state develops above the middle of the energy gap atE−E v=600 meV. Annealing measurements in dry air and H2 lead to the conclusion that the single energy level originates from a dissociated hydrogen bond in the silicon dioxide.
Copyright: Copyright 1974 Springer-Verlag
beteiligte Personen: Voland, G. , Pagnia, H.
Format: Elektronisch
Erschienen: 1974.
Serie: Springer Online Journal Archives 1860-2000 [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1007/BF00892337

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Verfasser Titel Jahr
zeige Details Voland, G., Pagnia, H. Steps and fine structure in the drain current of MISFETs after X-irradiation under bias
in: Applied physics , ISSN 1432-0630, Vol. 8 (3. 1975), p. 211-215
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1975
zeige Details HEISTRACHER, P., KRAUPP, O., ... Effects of X-irradiation on Papillary Muscle of the Cat
in: Nature . - London [u.a.] : Nature Publising Group, ISSN 1476-4687, Vol. 188, No. 4748 (1960), p. 413-415
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1960
zeige Details Michailov, M. Ch., Welscher, U. E., ... Action of tetrodotoxin on the contractile responses of isolated guinea-pig urinary bladder preparation to X-irradiation and to electrical stimulation
in: Radiation and environmental biophysics , ISSN 1432-2099, Vol. 11 (4. 1975), p. 289-294
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1975
zeige Details Yoshikawa, M.., Itoh, H.., ... Effects of gamma-ray irradiation on cubic silicon carbide metal-oxide-semiconductor structure
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 70, No. 3 (1991), p. 1309-1312
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1991
Radiation effects on cubic silicon carbide (3C-SiC) metal-oxide-semiconductor (MOS) structures have been studied with high-frequency capacitance-voltage measurements. It was <m1;38p>found that interface traps are generated at the 3C-SiC/SiO2 interface and oxide-trapped charges are built up in the... mehr
beteiligte Personen: Yoshikawa, M.. , Itoh, H.. , Morita, Y.. , Nashiyama, I.. , Misawa, S.. , Okumura, H.. , Yoshida, S..
Format: Elektronisch
Erschienen: 1991.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.349587
zeige Details Schwabedal, P., Bock, R., ... Influence of adrenalectomy, total body X-irradiation and dexamethasone on the amount of CRF-Granules and “classical” neurosecretory material in the rat neurohypophysis
in: Anatomy and embryology , ISSN 1432-0568, Vol. 148 (3. 1975), p. 267-278
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1975