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zeige Details Khan, G. A., Hogarth, C. A. Electroforming in MIM structure of SiOx and SiOx/SnO composite dielectric thin films
in: Journal of materials science , ISSN 1573-4803, Vol. 27 (10. 1992), p. 2613-2618
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1992
Abstract Electroforming and related phenomena in SiO x and SiO x -SnO thin films incorporated in copper-oxide-copper metal-insulator-metal structures have been investigated. Both types of devices showed voltage-controlled negative resistance, voltage memory effects (thermal and threshold) and electron emission. The voltage-controlled negative resistance and voltage memory effects may be interpreted in terms of the filamentary model of Dearnaley et al. The electron emission phenomenon is attributed to the Dearnaley model as modified by Rakhshani et al. The a.c. conductance of the devices before and after forming was also studied and the results support the proposed filamentary model of the electroforming process.
Copyright: Copyright 1992 Chapman & Hall
beteiligte Personen: Khan, G. A. , Hogarth, C. A.
Format: Elektronisch
Erschienen: 1992.
Serie: Springer Online Journal Archives 1860-2000 [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1007/BF00540677

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Verfasser Titel Jahr
zeige Details Sharma, R. N.., Rastogi, A. C.. Structure and composition of interfacial silicon oxide layer in chemical vapor deposited Y2O3-SiO2 bilayer dielectrics for metal-insulator-semiconductor devices
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 76, No. 7 (1994), p. 4215-4224
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1994
zeige Details Su Yu, Jae., Dong Song, Jin., ... Dependence of band gap energy shift of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering on stoichiometry of SiOx and SiNx capping layers
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 91, No. 7 (2002), p. 4256-4260
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2002
zeige Details Al-Dhhan, Z. T., Hogarth, C. A. D.c. conduction in thin films of SiO/In2O3 before and after electroforming
in: Journal of materials science , ISSN 1573-4803, Vol. 22 (10. 1987), p. 3698-3702
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1987
zeige Details Packwood, R. H.., Remond, G.., ... X-ray spectrometry and photoelectron spectroscopy applied to the study of layered samples: SiO2 and SiOx films on InSb
in: Surface and Interface Analysis, in: Surface and Interface Analysis . - Chichester [u.a.] : Wiley, ISSN 0142-2421, ZDB-ID 2023881-2 Vol. 11 (3. 1988), p. 127-133
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1988
zeige Details Ilyas, M., Hogarth, C. A. Some electrical properties of amorphous thin films of mixed SiO and TiO
in: Journal of materials science , ISSN 1573-4803, Vol. 18 (11. 1983), p. 3377-3386
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1983
Abstract Electrical conduction in Cu-SiO/TiO-Cu thin film structures has been investigated. Prior to electroforming, the d.c. conduction showed a behaviour of the form log l c∞(Vb)1/2 where l c is the circulating current and V b is the applied voltage. At low applied voltages the a.c.... mehr
Copyright: Copyright 1983 Chapman and Hall Ltd mehr
beteiligte Personen: Ilyas, M. , Hogarth, C. A.
Format: Elektronisch
Erschienen: 1983.
Serie: Springer Online Journal Archives 1860-2000 [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1007/BF00544163