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zeige Details Weiguo, Sun Interface of anodic sulfide-oxide on n-type InSb
in: Applied physics , ISSN 1432-0630, Vol. 52 (1. 1991), p. 75-77
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1991
Abstract A novel anodic sulfidization process for forming native sulfide-oxide films on n-type InSb is described. The results of Auger electron spectroscopy analysis indicate that native sulfide-oxide films are formed from aqueous sulfide solutions. The measured capacitance-voltage characteristics of metal-insulator-semiconductor devices indicate that the films have a low fixed surface charge density of the order of 3×1010 cm−2 and small hysteresis. The native sulfide-oxide films leave the surface of n-type InSb practically at flatband and in this respect are superior to the passivation layers of anodic oxide and direct plasma SiN x . The interface between InSb and its native sulfide-oxide in combination with plasma CVD SiN x has excellent electrical properties.
Copyright: Copyright 1991 Springer-Verlag
beteiligte Personen: Weiguo, Sun
Format: Elektronisch
Erschienen: 1991.
Serie: Springer Online Journal Archives 1860-2000 [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1007/BF00323688

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