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zeige Details Alexanian, A. G., Alexanian, Al. G., ... On resonance phototunneling and photoelectric properties ofpInSb-nCdTe heterojunction
in: International journal of infrared and millimeter waves , ISSN 1572-9559, Vol. 14 (10. 1993), p. 2203-2219
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1993
Abstract Photoelectric properties and current-voltage characteristics ofpInSb-nCdTe heterojunction have been studied as a function ofnCdTe layer thickness. Spectral dependence of photoconductivity has been found, as well as the junction field penetration domain innCdTe. Various mechanisms of charge separation are considered: resonance phototunneling mechanism, and absorption mechanism with further tunneling through the barrier, which explains the character of spectral dependence for the photoconductivity both beyond the maximum of spectral dependence and beyond edge of fundamental absorption forpInSb. By the photoconductivity fall-off we have determined the concentration of impurity ND, which stays in good agreement with the ND value determined from measurements of field penetration depth. Possibilities of extending the photosensitivity to higher wavelengths range are discussed, by variation of impurities concentrations NA and ND, and by means of the external electrical field.
Copyright: Copyright 1993 Plenum Publishing Corporation
beteiligte Personen: Alexanian, A. G. , Alexanian, Al. G. , Kazarian, R. K. , Matevossian, L. A. , Nickogossian, H. S.
Format: Elektronisch
Erschienen: 1993.
Serie: Springer Online Journal Archives 1860-2000 [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1007/BF02096382

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