DFG Nationallizenz: Correlation between electrical switching...

Verfasser

Titel

Jahr

Bischoff, M., Pagnia, H., ...

Correlation between electrical switching and photon emission in planar metal/insulator/metal diodes
in: Thin Solid Films, in: Thin Solid Films . - Amsterdam : Elsevier, ISSN 0040-6090, ZDB-ID 1482896-0 Vol. 139, No. 1 (1986), p. 25-32
Zugang: zum Volltext
ähnliche Vorschläge

1986

beteiligte Personen:	Bischoff, M. , Pagnia, H. , Weyrich, K.
Format:	Elektronisch
Erschienen:	1986.
Serie:	ScienceDirect Elsevier journal backfiles [Dig. Serial]
Schlagwörter:
URL:	http://linkinghub.elsevier.com/retrieve/pii/0040-6090(86)90044-1

Ähnliche Vorschläge

Verfasser

Titel

Jahr

Canet, P.., Laurent, C.., ...

Light emission from metal-insulator-metal structures
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 73, No. 1 (1993), p. 384-393
Zugang: zum Volltext
ähnliche Vorschläge

1993

The study of electroluminescence from gold-containing plasma polymerized propane thin films was initially our goal. These films consist of small isolated gold clusters, a few tens of angstrom in diameter, dispersed in an otherwise insulating or semi-insulating matrix below the electrical... mehr

beteiligte Personen:	Canet, P.. , Laurent, C.. , Akinnifesi, J.. , Despax, B..
Format:	Elektronisch
Erschienen:	1993.
Serie:	AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL:	http://dx.doi.org/10.1063/1.353861

Korobov, A. I., Naumchenko, A. S., ...

Correlation in the change of internal stresses and electrical properties in metal-insulator-metal film structures during heat treatment
in: Russian physics journal , ISSN 1573-9228, Vol. 14 (6. 1971), p. 822-824
Zugang: zum Volltext
ähnliche Vorschläge

1971

Conclusions 1. A correlation was established between the changes of internal stresses in three-layer capacitor structures and the change of their electrical parameters. These changes are due to physicochemical processes occurring in films during heat treatment. 2. It was noted that the... mehr

beteiligte Personen:	Korobov, A. I. , Naumchenko, A. S. , Shchegolov, S. S.
Format:	Elektronisch
Erschienen:	1971.
Serie:	Springer Online Journal Archives 1860-2000 [Dig. Serial]
Schlagwörter:
URL:	http://dx.doi.org/10.1007/BF00822182

Hübers, H.-W.., Schwaab, G. W.., ...

Video detection and mixing performance of GaAs Schottky-barrier diodes at 30 THz and comparison with metal-insulator-metal diodes
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 75, No. 8 (1994), p. 4243-4248
Zugang: zum Volltext
ähnliche Vorschläge

1994

Video detection experiments from 0.7 to 30 THz and mixing experiments at 30 THz have been performed with GaAs Schottky-barrier diodes and W-Ni metal-insulator-metal (MIM) diodes. Above approximately 12 THz the MIM diode is the more sensitive video detector (a factor of 5–10 at 30 THz).... mehr

beteiligte Personen:	Hübers, H.-W.. , Schwaab, G. W.. , Röser, H. P..
Format:	Elektronisch
Erschienen:	1994.
Serie:	AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL:	http://dx.doi.org/10.1063/1.355980

Johnson, D. J.., Quintenz, J. P.., ...

Electron and ion kinetics and anode plasma formation in two applied Br field ion diodes
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 57, No. 3 (1985), p. 794-805
Zugang: zum Volltext
ähnliche Vorschläge

1985

Two magnetically insulated ion diodes that utilize a radial applied-B field are described. Both diodes generate an annular beam that is extracted along the diode axis. The first diode operated at 1.2 MV and 600 kA for 25 ns and generated a 300-kA ion beam. The second operated at 300 kV, 100 kA... mehr

beteiligte Personen:	Johnson, D. J.. , Quintenz, J. P.. , Sweeney, M. A..
Format:	Elektronisch
Erschienen:	1985.
Serie:	AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL:	http://dx.doi.org/10.1063/1.334728

Van Tuyen, Vo., Szentpáli, Béla.

Tunneling in planar-doped barrier diodes
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 68, No. 6 (1990), p. 2824-2828
Zugang: zum Volltext
ähnliche Vorschläge

1990

The effect of the thermionic-field emission mechanism on the I-V characteristics of planar-doped barrier diodes is investigated. The regions of temperature and of structural dimensions are given where this effect appears. The differences due to the different shapes of the potential barrier are... mehr

beteiligte Personen:	Van Tuyen, Vo. , Szentpáli, Béla.
Format:	Elektronisch
Erschienen:	1990.
Serie:	AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL:	http://dx.doi.org/10.1063/1.346462