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Verfasser Titel Jahr
zeige Details Chen, Y.., Schneider, R.., ... Dislocation reduction in GaN thin films via lateral overgrowth from trenches
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 75, No. 14 (1999), p. 2062-2063
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1999
A technology to reduce the dislocation density in GaN thin films by lateral overgrowth from trenches (LOFT) is reported. In LOFT, a GaN thin film was grown on sapphire substrate first, then trenches were formed into the thin film by etching. GaN material was regrown laterally from the trench sidewalls to form a continuous thin film. The average surface density of threading dislocations is reduced from 8×109/cm2 in the first GaN thin film to 6×107/cm2 in the regrown GaN thin film. © 1999 American Institute of Physics.
beteiligte Personen: Chen, Y.. , Schneider, R.. , Wang, S. Y..
Format: Elektronisch
Sprache: English
Erschienen: 1999.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.124916

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Verfasser Titel Jahr
zeige Details Sakai, Akira Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 76, No. 4 (2000), p. 442-444
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2000
zeige Details Craven, M. D.., Lim, S. H.., ... Threading dislocation reduction via laterally overgrown nonpolar (112¯0) a-plane GaN
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 81, No. 7 (2002), p. 1201-1203
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2002
zeige Details Hao, M. Configuration of dislocations in lateral overgrowth GaN films
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 85, No. 9 (1999), p. 6497-6501
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1999
zeige Details Zheleva, Tsvetanka S.., Ashmawi, Waeil M.., ... Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 74, No. 17 (1999), p. 2492-2494
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1999
A reduction in the dislocation density of 104–105 cm−2 has been achieved via lateral epitaxial overgrowth (LEO) of GaN films selectively grown from stripes etched in SiO2 masks deposited on GaN/AlN/6H–SiC(0001) heterostructures. The magnitudes and distribution of stresses generated in the... mehr
beteiligte Personen: Zheleva, Tsvetanka S.. , Ashmawi, Waeil M.. , Nam, Ok-Hyun. , Davis, Robert F..
Format: Elektronisch
Sprache: English
Erschienen: 1999.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.123017
zeige Details Feng, Z.., Lovell, E.., ... Stress-based prediction of dislocation generation in GaN during lateral epitaxial overgrowth
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 80, No. 9 (2002), p. 1547-1549
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2002