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Verfasser Titel Jahr
zeige Details Feng, Z.., Lovell, E.., ... Stress-based prediction of dislocation generation in GaN during lateral epitaxial overgrowth
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 80, No. 9 (2002), p. 1547-1549
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2002
Finite element models were developed to simulate the stress history during an entire gallium nitride lateral epitaxial overgrowth process, from seed layer deposition on a substrate to GaN overgrowth above an SiO2 mask at 1100 °C and then cooldown to 20 °C. Lattice and thermal expansion mismatches between GaN and sapphire were considered simultaneously. Shearing stresses on a series of crystal planes were transiently analyzed. Based on the computational results, it is possible to predict the locations of high-density dislocations and when they develop, as well as Burgers vectors, dislocation types and their directions. © 2002 American Institute of Physics.
beteiligte Personen: Feng, Z.. , Lovell, E.. , Engelstad, R..
Format: Elektronisch
Sprache: English
Erschienen: 2002.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.1454210

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Verfasser Titel Jahr
zeige Details Sakai, Akira Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 76, No. 4 (2000), p. 442-444
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2000
zeige Details Sakai, Akira Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 73, No. 4 (1998), p. 481-483
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1998
We have investigated by transmission electron microscopy (TEM) defect morphology and structure in GaN films formed using an epitaxial lateral overgrowth (ELO) technique on SiO2-mask/window-stripe-patterned GaN layers in hydride vapor-phase epitaxy. In this experiment, the regions overgrown on the... mehr
1. Verfasser: Sakai, Akira
Format: Elektronisch
Sprache: English
Erschienen: 1998.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.121907
zeige Details Hao, M. Configuration of dislocations in lateral overgrowth GaN films
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 85, No. 9 (1999), p. 6497-6501
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1999
zeige Details Kozodoy, P.., Ibbetson, J. P.., ... Electrical characterization of GaN p-n junctions with and without threading dislocations
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 73, No. 7 (1998), p. 975-977
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1998
zeige Details Chichibu, S. F. Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 76, No. 12 (2000), p. 1576-1578
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2000