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Verfasser Titel Jahr
zeige Details Feng, Z.., Lovell, E.., ... Stress-based prediction of dislocation generation in GaN during lateral epitaxial overgrowth
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 80, No. 9 (2002), p. 1547-1549
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2002
Finite element models were developed to simulate the stress history during an entire gallium nitride lateral epitaxial overgrowth process, from seed layer deposition on a substrate to GaN overgrowth above an SiO2 mask at 1100 °C and then cooldown to 20 °C. Lattice and thermal expansion mismatches between GaN and sapphire were considered simultaneously. Shearing stresses on a series of crystal planes were transiently analyzed. Based on the computational results, it is possible to predict the locations of high-density dislocations and when they develop, as well as Burgers vectors, dislocation types and their directions. © 2002 American Institute of Physics.
beteiligte Personen: Feng, Z.. , Lovell, E.. , Engelstad, R..
Format: Elektronisch
Sprache: English
Erschienen: 2002.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.1454210

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Verfasser Titel Jahr
zeige Details Sakai, Akira Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 76, No. 4 (2000), p. 442-444
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2000
zeige Details Sakai, Akira Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 73, No. 4 (1998), p. 481-483
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1998
zeige Details Hao, M. Configuration of dislocations in lateral overgrowth GaN films
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 85, No. 9 (1999), p. 6497-6501
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1999
zeige Details Kozodoy, P.., Ibbetson, J. P.., ... Electrical characterization of GaN p-n junctions with and without threading dislocations
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 73, No. 7 (1998), p. 975-977
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1998
The effect of dislocations on the electrical characteristics of GaN p-n junctions has been examined through current–voltage measurements. Lateral epitaxial overgrowth (LEO) was used to produce areas of low dislocation density in close proximity to areas with the high dislocation density typical... mehr
beteiligte Personen: Kozodoy, P.. , Ibbetson, J. P.. , Marchand, H.. , Fini, P. T.. , Keller, S.. , Speck, J. S.. , DenBaars, S. P.. , Mishra, U. K..
Format: Elektronisch
Sprache: English
Erschienen: 1998.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.122057
zeige Details Chichibu, S. F. Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 76, No. 12 (2000), p. 1576-1578
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2000