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zeige Details Liss, K. D.., Magerl, A.., ... In situ neutron diffraction study of lattice deformation during oxygen precipitation in silicon
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 70, No. 3 (1991), p. 1276-1280
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1991
We present the first in situ measurement of the evolution of strain fields due to oxygen precipitation in silicon single crystals by means of high-resolution neutron backscattering. The integrated reflecting power R and the lattice parameter variations Δd/d which are directly related to the strain fields have been measured as a function of temperature and annealing time. In the temperature range from 300 to 1185 K, high purity float zone crystals maintain the R-values characteristic for perfect crystals. In contrast, Czochralski-grown crystals which contain on the order of 1018 oxygen atoms cm−3 (20 ppm), show a steep increase in reflectivity starting at 1160 K, and which goes through a maximum at 1350 K. At 1456 K, partial annealing occurs with a time constant of several hours.
beteiligte Personen: Liss, K. D.. , Magerl, A.. , Schneider, J. R.. , Zulehner, W..
Format: Elektronisch
Sprache: English
Erschienen: 1991.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.350336

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