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Verfasser Titel Jahr
zeige Details Hao, M. Configuration of dislocations in lateral overgrowth GaN films
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 85, No. 9 (1999), p. 6497-6501
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1999
The dislocation distribution and emission profile of sublimation lateral overgrowth GaN and metalorganic chemical vapor deposition films have been studied using transmission electron microscopy and cathodoluminescence. A close relationship between the emission profile and the dislocation distribution has been observed. The results show that the dislocations not only affect the band edge emission, but also the yellow emission. It is observed that the dislocations propagate laterally in the overgrowth region. The mechanism of the change in the propagation direction of dislocations has been discussed.© 1999 American Institute of Physics.
1. Verfasser: Hao, M.
Format: Elektronisch
Sprache: English
Erschienen: 1999.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.370110

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