Anmelden/Registrieren
Zurück zur geteilten Ansicht
Verfasser Titel Jahr
zeige Details Su Yu, Jae., Dong Song, Jin., ... Dependence of band gap energy shift of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering on stoichiometry of SiOx and SiNx capping layers
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 91, No. 7 (2002), p. 4256-4260
Zugang: zum Volltext
ähnliche Vorschläge
2002
We have investigated the effects of the stoichiometry of SiOx and SiNx capping layers on the band gap energy shift induced by impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiple quantum well structures. The stoichiometry of the SiOx and SiNx capping layers was changed by varying the flow rate of silane (SiH4) gas, and argon gas was employed as the carrier gas of the diluted SiH4 gas to eliminate any possible incorporation of nitrogen into the deposited film when nitrogen gas is employed as the carrier gas. A blueshift of photoluminescence peak of up to 112 meV is observed after rapid thermal annealing at 950 °C for 50 s from the sample capped with SiOx (provided with a SiH4 flow rate of 20 sccm). It is observed that the magnitude of the blueshift increases with the decrease of SiH4 flow rate for the SiOx and SiNx capping layer because of the increased porosity of dielectric capping layers. The insertion of intermediate GaAs cap layer reduces the band gap energy shift irrespective of the SiOx or SiNx capping layer. © 2002 American Institute of Physics.
beteiligte Personen: Su Yu, Jae. , Dong Song, Jin. , Tak Lee, Yong.
Format: Elektronisch
Sprache: English
Erschienen: 2002.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.1448878

Ähnliche Vorschläge

Zurück zur geteilten Ansicht
Verfasser Titel Jahr
zeige Details Yu, Jae Su., Lee, Yong Tak. Effects of In0.53Ga0.47As cap layer and stoichiometry of dielectric capping layers on impurity-free vacancy disordering of In0.53Ga0.47As/InP multiquantum well structures
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 88, No. 10 (2000), p. 5720-5723
Zugang: zum Volltext
ähnliche Vorschläge
2000
zeige Details Yu, Jae Su., Song, Jin Dong., ... Influence of dielectric deposition parameters on the In0.2Ga0.8As/GaAs quantum well intermixing by impurity-free vacancy disordering
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 92, No. 3 (2002), p. 1386-1390
Zugang: zum Volltext
ähnliche Vorschläge
2002
zeige Details Saher Helmy, A.., Bryce, A. C.., ... Raman spectroscopy for characterizing compositional intermixing in GaAs/AlGaAs heterostructures
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 74, No. 26 (1999), p. 3978-3980
Zugang: zum Volltext
ähnliche Vorschläge
1999
zeige Details Bürkner, S.., Baeumler, M.., ... Influence of interdiffusion processes on optical and structural properties of pseudomorphic In0.35Ga0.65As/GaAs multiple quantum well structures
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 79, No. 9 (1996), p. 6818-6825
Zugang: zum Volltext
ähnliche Vorschläge
1996
zeige Details Cao, N.., Elenkrig, B. B.., ... Band-gap blue shift by impurity-free vacancy diffusion in 1.5-μm-strained InGaAsP/InP multiple quantum-well laser structure
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 70, No. 25 (1997), p. 3419-3421
Zugang: zum Volltext
ähnliche Vorschläge
1997