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zeige Details Pintilie, L.., Pentia, E.., ... Field-effect-assisted photoconductivity in PbS films deposited on silicon dioxide
In: Journal of Applied Physics. - [S.l.], ISSN 1089-7550, Vol. 91, No. 9 (2002), p. 5782-5786
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2002
Lead sulfide (PbS) thin films were deposited from a chemical bath onto SiO2/Si (n-type) substrates. Pseudo-metal–oxide–semiconductor devices were obtained by evaporating source and drain gold electrodes on a PbS surface and aluminum gate electrode on a Si substrate. Field-effect-assisted photoconductivity in the PbS layer was investigated at room temperature, in the 800–2700-nm-wavelength domain for different values and polarities of the drain and gate voltages. The best results were obtained for a positive gate, when both semiconductors are in depletion. An enhancement of about 25% of the photoconductive signal is obtained compared with the case when the gate electrode is absent or is not used. A simple model is proposed that explains the behavior of the dark current and photoconductive signal in PbS film with changing the gate voltage. © 2002 American Institute of Physics.
beteiligte Personen: Pintilie, L.. , Pentia, E.. , Matei, I.. , Pintilie, I..
Format: Elektronisch
Sprache: English
Erschienen: 2002.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.1468277

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