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zeige Details Melloch, M. R.., Carpenter, M. S.., ... Molecular beam epitaxy regrowth by use of ammonium sulfide chemical treatments
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 56, No. 11 (1990), p. 1064-1066
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1990
The application of ammonium sulfide chemical treatments for molecular beam epitaxy regrowth is examined. Reflection high-energy electron diffraction, transmission electron microscopy, and capacitance-voltage profiling techniques are used to investigate the regrown interface. A slight enhancement of the electron concentration is seen at the regrown interface due to the incorporation of residual sulfur atoms as donors. The amount of residual sulfur donors is a strong function of the substrate temperature at which regrowth is initiated.
beteiligte Personen: Melloch, M. R.. , Carpenter, M. S.. , Dungan, T. E.. , Li, D.. , Otsuka, N..
Format: Elektronisch
Sprache: English
Erschienen: 1990.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.102566

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