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zeige Details Aumann, C. E.., Mo, Y.-W.., ... Diffraction determination of the structure of metastable three-dimensional crystals of Ge grown on Si(001)
In: Applied Physics Letters. - Woodbury, NY : Inst., ISSN 1077-3118, Vol. 59, No. 9 (1991), p. 1061-1063
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1991
A straightforward kinematic analysis of diffraction from metastable three-dimensional crystallites of Ge grown on Si(001) is presented. Low-energy electron diffraction data from these crystallites agree with diffraction images calculated for a structure determined from scanning-tunneling microscopy data. Additionally, reflection high-energy electron diffraction images predicted for these crystals agree with existing data.
beteiligte Personen: Aumann, C. E.. , Mo, Y.-W.. , Lagally, M. G..
Format: Elektronisch
Sprache: English
Erschienen: 1991.
Serie: AIP Digital Archive [Dig. Serial]
Schlagwörter:
URL: http://dx.doi.org/10.1063/1.106345

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zeige Details Cimalla, V.., Zekentes, K.. Temperature dependence of the transition from two-dimensional to three-dimensional growth of Ge on (001)Si studied by reflection high-energy electron diffraction
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zeige Details Hernandez, C.., Campidelli, Y.., ... Ge/Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor
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